LOW DIELECTRIC CONSTANT SILICEOUS FILM MANUFACTURING COMPOSITION AND METHODS FOR PRODUCING CURED FILM AND ELECTRONIC DEVICE USING THE SAME
申请人:Merck Patent GmbH
公开号:EP4010441A1
公开(公告)日:2022-06-15
[EN] LOW DIELECTRIC CONSTANT SILICEOUS FILM MANUFACTURING COMPOSITION AND METHODS FOR PRODUCING CURED FILM AND ELECTRONIC DEVICE USING THE SAME<br/>[FR] COMPOSITION DE FABRICATION DE FILM SILICEUX À FAIBLE CONSTANTE DIÉLECTRIQUE ET PROCÉDÉS DE PRODUCTION DE FILM DURCI ET DISPOSITIF ÉLECTRONIQUE L'UTILISANT
申请人:MERCK PATENT GMBH
公开号:WO2021028297A1
公开(公告)日:2021-02-18
To provide a low dielectric constant siliceous film manufacturing composition capable of forming a low dielectric constant siliceous film with dispersed pores having excellent mechanical properties and stable electrical properties. [Means] The present invention provides a low dielectric constant siliceous film manufacturing composition comprising: a polysiloxane, a pore-generating material, a condensation catalyst generator, and a solvent.
Photolysis of cubyl iodides: access to the cubyl cation
作者:D. Sivakumar Reddy、Gilbert P. Sollott、Philip E. Eaton