Germane--niobium (3/5) | 12378-57-3

• 分子结构分类: 无机化合物 - 混合金属/非金属化合物 - 各种混合金属/非金属
• 英文名称: Germane--niobium (3/5)
• 英文别名: germane;niobium
• CAS: 12378-57-3
• 化学式: Ge₃Nb₅
• 分子量: 682.302
• InChiKey: DCTIAWIVWBUDGG-UHFFFAOYSA-N

物化性质

• 熔点：
  2110 °C

计算性质

• 辛醇/水分配系数(LogP)：
  -4.37
• 重原子数：
  8
• 可旋转键数：
  0
• 环数：
  0.0
• sp3杂化的碳原子比例：
  0.0
• 拓扑面积：
  0
• 氢给体数：
  0
• 氢受体数：
  0

反应信息

• 作为反应物：
  描述：

  镍 、 锗烷 、 Germane--niobium (3/5) 以 neat (no solvent) 为溶剂， 生成
  参考文献：
  名称：

  Standard molar enthalpies of formation of Me5Ge3 (M ≡ Zr, Nb, Mo), MeGe (Me ≡ Ru, Rh, Pd) and Pd2Ge by high-temperature calorimetry

  摘要：

  The standard enthalpies of formation of 4d transition-metal germanides were determined using a high-temperature calorimeter at 1473 +/- 2 K: DELTA-H(f)o(Zr5Ge3) = - 648.6 +/- 45.1 kJ mol-1, DELTA-H(f)o(Nb5Ge3) = - 553.8 +/- 33.8 kJ mol-1 by solute-solvent drop calorimetry, and DELTA-H(f)o(Mo5Ge3) = - 133.6 +/- 4.0 kJ mol-1, DELTA-H(f)o(RuGe) = - 56.9 +/- 1.4 kJ mol-1, DELTA-H(f)o(RhGe) = - 113.8 +/- 2.1 kJ mol-1, DELTA-H(f)o(PdGe) = - 92.9 +/- 1.5 kJ mol-1, by the direct synthesis method. A value for Pd2Ge is also reported: DELTA-H(f)o(Pd2Ge) = - 156.8 +/- 2.7 kJ mol-1.

  DOI：

  10.1016/0022-5088(91)90238-y
• 作为产物：
  描述：

  potassium hexafluorogermanate 、 以 melt 为溶剂， 生成 Germane--niobium (3/5)
  参考文献：
  名称：

  从熔融氟化物电沉积铌锗合金

  摘要：

  铌锗合金是通过在共晶溶剂中含有 5 mol% 和不同浓度 的熔融氟化物溶液通过电沉积获得的。熔浴温度通常为约750℃。阴极（或基板）由钼和钨箔制成，锗片用作溶解阳极。通过改变熔池中锗离子的浓度，金属间化合物、、、和它们的相混合物获得了稳定生长的沉积物。发现在熔融氟化物浴中，锗比铌更贵重，因此有利于富锗合金的沉积。然而，超导化合物不能作为单相沉积物获得。在极端条件下操作时，它仅作为某些相混合物中的次要成分获得。

  DOI：

  10.1149/1.2120014

文献信息

• Experimental and thermodynamic assessment of the Ge-Nb-Si ternary phase diagram
  作者：Claire A. Utton、Ioannis Papadimitriou、Hajime Kinoshita、Panos Tsakiropoulos

  DOI：10.1016/j.jallcom.2017.04.279

  日期：2017.9

  thermodynamic description of the Ge-Nb-Si system has been developed in the current paper using the CALPHAD method. Initially the Ge-Nb phase diagram was reassessed using the CALPHAD method to take into account recent ab initio data. To supplement limited information on the ternary system in the literature between 800 and 1820 °C, the pseudo binary between Nb5Si3 and Nb5Ge3 was studied experimentally between

  硅化铌基原位复合材料由于其优异的高温机械性能和低密度，有可能取代镍基高温合金。在这些系统中加入少量锗可以显着提高抗氧化性。锗对块状铌硅化物基原位复合材料中形成的相的影响不是特别清楚，特别是引入锗对 Nb5Si3 金属间化合物形成的影响。文献中可获得的数据有限。为了提供有关锗对 Nb-Si 系统中相平衡影响的连贯信息，本文使用 CALPHAD 方法对 Ge-Nb-Si 系统进行了全面的热力学描述。最初使用 CALPHAD 方法重新评估 Ge-Nb 相图，以考虑最近的 ab initio 数据。为了补充文献中关于 800 到 1820 °C 之间三元系统的有限信息，在 1200 到 1500 °C 之间对 和 Nb5Ge3 之间的伪二元进行了实验研究。实验和建模结果表明，通过添加锗， 的 W5Si3 原型可以稳定到较低的温度。Ge含量超过12.4at。% 在 1200
• Influences of gas flow on chemical vapor deposition of superconducting Nb‐Ge films
  作者：Mitsumasa Suzuki、Hiroshi Onodera、Takeshi Anayama、Gin‐ichiro Oya、Yutaka Onodera

  DOI：10.1063/1.92727

  日期：1981.8.15

  Nb‐Ge films, which have been prepared by chemical vapor deposition, have been studied for superconducting transition temperatures, crystal structures, and growth morphology. In the films a relationship was obtained among positions at which the highest Tc films are deposited, the degree of orientation for A15 crystallites is lowered, and the microstructures for film surface change has been found. This

  已经通过化学气相沉积制备的 Nb-Ge 薄膜已经研究了超导转变温度、晶体结构和生长形态。在薄膜中，获得了最高 Tc 薄膜沉积位置之间的关系，A15 微晶的取向度降低，并发现了薄膜表面变化的微观结构。这可以通过 Ge 的沉积速率高于 Nb 的沉积速率来解释。
• Preparation of A-15 Nb3Ge by chemical vapour deposition
  作者：Kazuo Fujiura、Takanori Watari、Akio Kato

  DOI：10.1016/0022-5088(85)90286-3

  日期：1985.11
• Superconductivity of Nb3Ge powder prepared by a vapour phase reaction
  作者：Masami Murakami、Takanori Watari、Akio Kato

  DOI：10.1016/0022-5088(83)90506-4

  日期：1983.8
• On the stability of hexagonal Ge7Nb10
  作者：Klaus W. Richter、Hans Flandorfer、H.Fritz Franzen

  DOI：10.1016/s0925-8388(00)01499-7

  日期：2001.5

  Our studies on the Ge-Nb system reveal the existence of a hexagonal compound with the composition Ge7Nb10 that is stable with respect to disproportionation and which was found to crystallize in the space group P6(3)/mmc. A hexagonal phase of the approximate composition Ge3Nb5 has been mentioned by different authors but has been commonly regarded as C- or N-stabilized and therefore not included in the binary phase diagram. A single crystal X-ray study of the compound revealed a Mn5Si3-type based structure where half of the 2b interstitial positions are tilled with Ge. X-ray powder diffraction studies and electron probe microanalysis were used to determine the composition ranges of the phases. Various experiments were carried out in order to confirm the thermodynamic stability of this compound and to rule out stabilization by hetero-elements. These studies included the use of different starting materials, different sample preparation techniques and different annealing procedures. The results show strong indications, that Ge7Nb10 is formed as a binary phase which is stable with respect to disproportionation and should therefore be included in the binary phase diagram. (C) 2001 Elsevier Science B.V. All rights reserved.