5-(tri-n-butylstannyl)-2-(triisopropylsilyl)thiazole | 1160067-10-6

• 分子结构分类: 有机化合物 - 有机杂环化合物 - 唑类
• 英文名称: 5-(tri-n-butylstannyl)-2-(triisopropylsilyl)thiazole
• 英文别名: 2-triisopropylsilyl-5-tributyltin-thiazole；Tri(propan-2-yl)-(5-tributylstannyl-1,3-thiazol-2-yl)silane
• CAS: 1160067-10-6
• 化学式: C₂₄H₄₉NSSiSn
• 分子量: 530.521
• InChiKey: XRQIOBHNYZTODZ-UHFFFAOYSA-N

物化性质

• 沸点：
  477.2±55.0 °C(Predicted)

计算性质

• 辛醇/水分配系数(LogP)：
  8.09
• 重原子数：
  28
• 可旋转键数：
  14
• 环数：
  1.0
• sp3杂化的碳原子比例：
  0.88
• 拓扑面积：
  41.1
• 氢给体数：
  0
• 氢受体数：
  2

反应信息

• 作为反应物：
  描述：

  5-(tri-n-butylstannyl)-2-(triisopropylsilyl)thiazole 在 四(三苯基膦)钯 、 正丁基锂 、 二异丙胺 作用下， 以 四氢呋喃 、 甲苯 为溶剂， 反应 19.0h， 生成 2,6-bis-trimethylsilanyl-cyclopenta[2,1-b;3,4-b’] dithiazole-4-one
  参考文献：
  名称：

  Air-Stable n-Type Organic Field-Effect Transistors Based on Carbonyl-Bridged Bithiazole Derivatives

  摘要：

  AbstractAn electronegative conjugated compound composed of a newly designed carbonyl‐bridged bithiazole unit and trifluoroacetyl terminal groups is synthesized as a candidate for air‐stable n‐type organic field‐effect transistor (OFET) materials. Cyclic voltammetry measurements reveal that carbonyl‐bridging contributes both to lowering the lowest unoccupied molecular orbital energy level and to stabilizing the anionic species. X‐ray crystallographic analysis of the compound shows a planar molecular geometry and a dense molecular packing, which is advantageous to electron transport. Through these appropriate electrochemical properties and structures for n‐type semiconductor materials, OFET devices based on this compound show electron mobilities as high as 0.06 cm2 V−1 s−1 with on/off ratios of 106 and threshold voltages of 20 V under vacuum conditions. Furthermore, these devices show the same order of electron mobility under ambient conditions.

  DOI：

  10.1002/adfm.200901803
• 作为产物：
  描述：

  三丁基氯化锡 、 3,6,7-苯并呋喃三醇三乙酸酯 在 正丁基锂 作用下， 以 四氢呋喃 为溶剂， 反应 1.0h， 以99%的产率得到5-(tri-n-butylstannyl)-2-(triisopropylsilyl)thiazole
  参考文献：
  名称：

  EP2223918

  摘要：

  公开号：

文献信息

• NITROGEN-CONTAINING FUSED RING COMPOUND, NITROGEN-CONTAINING FUSED RING POLYMER, ORGANIC THIN FILM, AND ORGANIC THIN FILM ELEMENT
  申请人：Ie Yutaka

  公开号：US20130041123A1

  公开（公告）日：2013-02-14

  Nitrogen-containing fused ring compound having at least one structural unit selected from the group consisting of a structural unit represented by the formula (1-1) and a structural unit represented by the formula (1-2).

  含氮融合环化合物，其至少具有从由式(1-1)表示的结构单元和由式(1-2)表示的结构单元组成的群体中选择的一个结构单元。
• Air-Stable n-Type Organic Field-Effect Transistors Based on 4,9-Dihydro-<i>s</i>-indaceno[1,2-<i>b</i>:5,6-<i>b</i>′]dithiazole-4,9-dione Unit
  作者：Yutaka Ie、Masashi Ueta、Masashi Nitani、Norimitsu Tohnai、Mikiji Miyata、Hirokazu Tada、Yoshio Aso

  DOI：10.1021/cm301985q

  日期：2012.8.28

  4,9-Dihydro-s-indaceno[1,2-b:5,6-b′]dithiazole-4,9-dione (IDD) was designed as a novel electronegative unit, and the π-conjugated compound (2C-TzPhTz) containing it was synthesized as a candidate for air-stable n-type organic field-effect transistor (OFET) materials. Cyclic voltammetry measurements revealed that the IDD unit contributes to lowering the lowest unoccupied molecular orbital (LUMO) energy

  4,9-二氢-小号-indaceno [1,2 b：5,6- b ']二噻唑-4,9-二酮（IDD）被设计为一个新颖的带负电的单元，以及π共轭化合物（2C-合成含有TzPhTz的TzPhTz作为空气稳定的n型有机场效应晶体管（OFET）材料的候选材料。循环伏安法测量表明，IDD单元有助于降低最低的空分子轨道（LUMO）能量水平。2C-TzPhTz的X射线晶体学分析显示几乎是平面的分子几何形状和密集的分子堆积，这对电子传输是有利的。基于2C-TzPhTz的OFET表现出高达0.39 cm 2 V –1 s –1的高电子迁移率，这是五环二酮类材料中观察到的最高电子迁移率之一。顶部接触式OFET器件在环境条件下显示出操作稳定性和长期稳定性，这归因于低水平的LUMO能级和固态的致密堆积。此外，底部接触的OFET在空气暴露条件下也保持了超过0.1 cm 2 V –1 s –1的良好电子迁移率。我们证明了n型OFET对H
• EP2223918
  申请人：——

  公开号：——

  公开（公告）日：——
• Air-Stable n-Type Organic Field-Effect Transistors Based on Carbonyl-Bridged Bithiazole Derivatives
  作者：Yutaka Ie、Masashi Nitani、Makoto Karakawa、Hirokazu Tada、Yoshio Aso

  DOI：10.1002/adfm.200901803

  日期：2010.3.24

  AbstractAn electronegative conjugated compound composed of a newly designed carbonyl‐bridged bithiazole unit and trifluoroacetyl terminal groups is synthesized as a candidate for air‐stable n‐type organic field‐effect transistor (OFET) materials. Cyclic voltammetry measurements reveal that carbonyl‐bridging contributes both to lowering the lowest unoccupied molecular orbital energy level and to stabilizing the anionic species. X‐ray crystallographic analysis of the compound shows a planar molecular geometry and a dense molecular packing, which is advantageous to electron transport. Through these appropriate electrochemical properties and structures for n‐type semiconductor materials, OFET devices based on this compound show electron mobilities as high as 0.06 cm2 V−1 s−1 with on/off ratios of 106 and threshold voltages of 20 V under vacuum conditions. Furthermore, these devices show the same order of electron mobility under ambient conditions.