The present invention is in the field of processes for the generation of thin inorganic films on substrates, in particular atomic layer deposition processes. The present invention relates to a process comprising bringing a compound of general formula (I) into the gaseous or aerosol state and depositing the compound of general formula (I) from the gaseous or aerosol state onto a solid substrate, wherein R1, R2, R3, and R4 are independent of each other an alkyl group, an aryl group or a trialkylsilyl group, M is Mn, Ni or Co, X is a ligand which coordinates M, wherein at least one X is a neutrally charged ligand, m is 1, 2 or 3 and n is at least 1 wherein the molecular weight of the compound of general formula (I) is up to 1000 g/mol.
本发明属于在基底上生成无机薄膜的工艺领域,特别是原子层沉积工艺。本发明涉及一种工艺,包括将通式(I)化合物带入气态或气溶胶态,并将通式(I)化合物从气态或气溶胶态沉积到固体基底上,其中 R1、R2、R3 和 R4 相互独立地为烷基、M是Mn、Ni或Co,X是配位M的
配体,其中至少有一个X是带中性电荷的
配体,m是1、2或3,n至少是1,其中通式(I)化合物的分子量最高为1000克/摩尔。