tetrakis(vinyloxymethyl)methane | 757-46-0

• 分子结构分类: 有机化合物 - 有机氧化合物
• 英文名称: tetrakis(vinyloxymethyl)methane
• 英文别名: 1,3-bis-vinyloxy-2,2-bis-vinyloxymethyl-propane；pentaerythritol tetravinyl ether；Pentaerythritoltetravinyl ether；Pentaerythrit-tetravinylether；1,3-Bis(ethenyloxy)-2,2-bis[(ethenyloxy)methyl]propane；1,3-bis(ethenoxy)-2,2-bis(ethenoxymethyl)propane
• CAS: 757-46-0
• 化学式: C₁₃H₂₀O₄
• mdl: MFCD01217380
• 分子量: 240.299
• InChiKey: XDWRKTULOHXYGN-UHFFFAOYSA-N

物化性质

• 熔点：
  49-50 °C
• 沸点：
  313.6±42.0 °C(Predicted)
• 密度：
  0.965±0.06 g/cm3(Predicted)

计算性质

• 辛醇/水分配系数(LogP)：
  2.7
• 重原子数：
  17
• 可旋转键数：
  12
• 环数：
  0.0
• sp3杂化的碳原子比例：
  0.38
• 拓扑面积：
  36.9
• 氢给体数：
  0
• 氢受体数：
  4

反应信息

• 作为反应物：
  描述：

  tetrakis(vinyloxymethyl)methane 在 potassium tert-butylate 、 lithium 、 叔丁醇 作用下， 以 乙醚 、 正己烷 为溶剂， 反应 5.0h， 生成 3-vinyloxy-2,2-bis(vinyloxymethyl)-3-cyclopropyloxypropane
  参考文献：
  名称：

  Kostikov, R. R.; Molchanov, A. P.; Kudyakova, R. N., Journal of Organic Chemistry USSR (English Translation), 1989, vol. 25, # 12.1, p. 2269 - 2271

  摘要：

  DOI：
• 作为产物：
  描述：

  季戊四醇 、 乙炔 在 potassium hydroxide 作用下， 以 二甲基亚砜 为溶剂， 生成 tetrakis(vinyloxymethyl)methane
  参考文献：
  名称：

  超支化四膦和四膦硫属化物的简便合成

  摘要：

  通过用季戊四醇的四乙烯基醚（紫外线照射、室温或 AIBN， 65°C）。(© Wiley-VCH Verlag GmbH & Co. KGaA, 69451 Weinheim, Germany, 2009)

  DOI：

  10.1002/ejoc.200900382

文献信息

• BASIC COMPOUND, CHEMICALLY AMPLIFIED RESIST COMPOSITION, AND PATTERNING PROCESS
  申请人：Hatakeyama Jun

  公开号：US20120141938A1

  公开（公告）日：2012-06-07

  A chemically amplified resist composition comprising a base polymer, an acid generator, and an amine quencher in the form of a β-alanine, γ-aminobutyric acid or 5-aminovaleric acid derivative having an acid labile group-substituted carboxyl group has a high contrast of alkaline dissolution rate before and after exposure and forms a pattern of good profile at a high resolution, minimal roughness and wide focus margin.

  一种化学放大型光刻胶组合物，包括基础聚合物、酸发生剂和胺淬灭剂，后者为β-丙氨酸、γ-氨基丁酸或5-氨基戊酸的衍生物，具有一个被酸不稳定基团所取代的羧基，这种组合物在曝光前后具有高对比度的碱性溶解速率，并且能够形成高分辨率、最小粗糙度和宽焦深度的良好图案轮廓。
• NOVOLAC RESIN AND RESIST FILM
  申请人：DIC Corporation

  公开号：US20180334523A1

  公开（公告）日：2018-11-22

  Provided are a novolac resin having developability, heat resistance, and dry etching resistance, and a photosensitive composition, a curable composition, and a resist film. A novolac resin including, as a repeating unit, a structural moiety represented by Structural Formula (1) or (2): (in the formula, Ar represents an arylene group, R 1 's each independently represent any one of a hydrogen atom, an alkyl group, an alkoxy group, and a halogen atom, m's each independently represent an integer of 1 to 3, and X is any one of a hydrogen atom, a tertiary alkyl group, an alkoxyalkyl group, an acyl group, an alkoxycarbonyl group, a hetero atom-containing cyclic hydrocarbon group, and a trialkylsilyl group) in which at least one of X's present in the resin is any one of a tertiary alkyl group, an alkoxyalkyl group, an acyl group, an alkoxycarbonyl group, a hetero atom-containing cyclic hydrocarbon group, and a trialkylsilyl group.

  提供一种具有可开发性、耐热性和干法蚀刻抗性的新戊醛树脂，以及一种光敏组合物、可固化组合物和抗蚀膜。一种新戊醛树脂包括以下结构单元： （在公式中，Ar代表芳基，R 1 分别独立地代表氢原子、烷基、烷氧基和卤素原子中的任意一种，m分别独立地代表1至3的整数，X代表氢原子、三级烷基、烷氧基烷基、酰基、烷氧羰基、含杂原子的环烃基和三烷基硅基中的任意一种），树脂中至少有一个X是三级烷基、烷氧基烷基、酰基、烷氧羰基、含杂原子的环烃基和三烷基硅基中的任意一种。
• COMPOUND, RESIN, MATERIAL FOR FORMING UNDERLAYER FILM FOR LITHOGRAPHY, UNDERLAYER FILM FOR LITHOGRAPHY, PATTERN FORMING METHOD, AND METHOD FOR PURIFYING THE COMPOUND OR RESIN
  申请人：Mitsubishi Gas Chemical Company, Inc.

  公开号：US20170073288A1

  公开（公告）日：2017-03-16

  The compound according to the present invention is represented by a specific formula. The compound according to the present invention has a structure according to the specific formula, and therefore can be applied to a wet process and is excellent in heat resistance and etching resistance. In addition, the compound according to the present invention has such a specific structure, and therefore has a high heat resistance, a relatively high carbon concentration, a relatively low oxygen concentration and also a high solvent solubility. Therefore, the compound according to the present invention can be used to form an underlayer film whose degradation is suppressed at high-temperature baking and which is also excellent in etching resistance to oxygen plasma etching or the like. Furthermore, the compound is also excellent in adhesiveness with a resist layer and therefore can form an excellent resist pattern.

  根据本发明，该化合物由特定的公式表示。根据本发明，该化合物具有特定公式的结构，因此可应用于湿法工艺，具有优异的耐热性和耐蚀性。此外，根据本发明，该化合物具有特定结构，因此具有高耐热性、相对较高的碳浓度、相对较低的氧浓度以及高溶剂溶解性。因此，根据本发明的化合物可用于形成在高温烘烤时降解受抑制且在氧等离子体蚀刻中具有优异耐蚀性的底层膜。此外，该化合物在与光阻层的粘附性方面也表现出色，因此可形成优异的光阻图案。
• Resist lower-layer composition containing thermal acid generator, resist lower layer film-formed substrate, and patterning process
  申请人：Ohsawa Youichi

  公开号：US20100119970A1

  公开（公告）日：2010-05-13

  There is disclosed a resist lower-layer composition configured to be used by a multi-layer resist method used in lithography to form a layer lower than a photoresist layer acting as a resist upper layer film, wherein the resist lower-layer composition becomes insoluble or poorly-soluble in an alkaline developer after formation of the lower layer, and wherein the resist lower-layer composition comprises, at least, a thermal acid generator for generating an acid represented by the general formula (1) by heating at a temperature of 100° C. or higher. RCOO—CH 2 CF 2 SO 3 − H + (1) There can be provided a resist lower-layer composition in a multi-layer resist method (particularly, a two-layer resist method and a three-layer resist method), which composition is used to form a layer lower than a photoresist layer acting as a resist upper layer film, which composition becomes insoluble or poorly-soluble in an alkaline developer after formation of the lower layer, and which composition is capable of forming a resist lower layer film, intermediate-layered film, and the like having a higher anti-poisoning effect and exhibiting a lower load to the environment.

  揭示了一种抗性下层组合物，配置为在光刻中使用的多层抗性方法中使用，用于形成低于作为抗性上层膜的光刻胶层的一层，其中抗性下层组合物在形成下层后变得不溶解或难溶解于碱性显影剂中，且抗性下层组合物至少包括用于通过在100°C或更高温度下加热生成由通式（1）表示的酸的热酸发生剂。 可以提供一种抗性下层组合物，用于多层抗性方法（特别是双层抗性方法和三层抗性方法），该组合物用于形成低于作为抗性上层膜的光刻胶层的一层，该组合物在形成下层后变得不溶解或难溶解于碱性显影剂中，并且该组合物能够形成具有更高抗毒性效果并表现出对环境负荷较低的抗性下层膜、中间层膜等。
• DIENE-BASED CARBOXYLATE ANION AND SALT THEREOF, AND POLYMERIZABLE OR CURABLE COMPOSITION THEREOF
  申请人：Kaneko Tomomasa

  公开号：US20130197123A1

  公开（公告）日：2013-08-01

  The claimed invention provides a novel compound not having been studied before, that is, a diene carboxylate anion that contains a specific structure, and a salt thereof. The claimed invention further provides a diene carboxylate anion and a salt thereof, especially a metal salt thereof, which are easily soluble in general organic solvents, reactive diluents, and resins, may be in a liquid state at normal temperature depending on the structure, and have high polymerizability. Polymerization/curing of these produces a resin to which many ionic bonds and a metal are introduced, providing various properties such as hardness, scratch resistance, anti-fingerprint property, gas-barrier property, water vapor barrier property, oxygen absorption property, ultraviolet protection, infrared protection, color development and coloring, high refractive index, adhesion, various catalytic abilities, fluorescence ability and light-emitting ability, optical amplification, dispersibility, and antistatic properties. In addition, the anion and the salt can be used for raw materials for functional fine particles and for metal nanoparticle composites, and also for MOD materials. The claimed invention also provides an advantageous method for producing the diene carboxylate anion and the salt thereof.

  所述发明提供了一种新颖的化合物，此化合物以前未被研究过，即一种含有特定结构的二烯二酸盐阴离子及其盐。所述发明进一步提供了一种二烯二酸盐阴离子及其盐，特别是其金属盐，这些盐在一般有机溶剂、反应性稀释剂和树脂中易溶解，在常温下可能处于液态，具有高聚合性。这些的聚合/固化产生的树脂引入了许多离子键和金属，提供了硬度、抗刮擦性、防指纹性、气体屏障性、阻水汽性、氧气吸收性、紫外线保护、红外线保护、颜色开发和着色、高折射率、粘附性、各种催化能力、荧光能力和发光能力、光学放大、分散性和抗静电性等各种性能。此外，该阴离子和盐可用作功能性细颗粒和金属纳米粒子复合材料的原材料，也可用于MOD材料。所述发明还提供了一种生产二烯二酸盐阴离子及其盐的优势方法。