申请人:Entegris, Inc.
公开号:US11164738B2
公开(公告)日:2021-11-02
A removal composition and process for cleaning post-chemical mechanical polishing (CMP) contaminants and ceria particles from a microelectronic device having said particles and contaminants thereon. The composition achieves highly efficacious removal of the ceria particles and CMP contaminant material from the surface of the microelectronic device without compromising the low-k dielectric, silicon nitride, or tungsten-containing materials.
一种清除组合物和工艺,用于清除微电子器件上的化学机械抛光(CMP)后污染物和铈微粒。该组合物能高效清除微电子设备表面的铈颗粒和 CMP 污染物,同时不会损害低介电系数、氮化硅或含钨材料。