<2-Hydroxy-2-ethyl-butyl>-butylether | 3587-71-1

• 分子结构分类: 有机化合物 - 有机氧化合物
• 英文名称: <2-Hydroxy-2-ethyl-butyl>-butylether
• 英文别名: 3-butoxymethyl-pentan-3-ol；3-(Butoxymethyl)pentan-3-ol；3-(butoxymethyl)pentan-3-ol
• CAS: 3587-71-1
• 化学式: C₁₀H₂₂O₂
• 分子量: 174.283
• InChiKey: RZNJKZXILVZLNV-UHFFFAOYSA-N

计算性质

• 辛醇/水分配系数(LogP)：
  2.3
• 重原子数：
  12
• 可旋转键数：
  7
• 环数：
  0.0
• sp3杂化的碳原子比例：
  1.0
• 拓扑面积：
  29.5
• 氢给体数：
  1
• 氢受体数：
  2

反应信息

• 作为产物：
  描述：

  3-戊酮 、 氯甲基丁基醚 生成 <2-Hydroxy-2-ethyl-butyl>-butylether
  参考文献：
  名称：

  Taeger,E. et al., Journal fur praktische Chemie (Leipzig 1954), 1965, vol. 28, p. 13 - 20

  摘要：

  DOI：

文献信息

• METAL ALKOXIDE COMPOUND, THIN-FILM-FORMING MATERIAL, METHOD FOR PRODUCING THIN FILM, AND ALCOHOL COMPOUND
  申请人：ADEKA CORPORATION

  公开号：US20150175642A1

  公开（公告）日：2015-06-25

  Disclosed is a metal alkoxide compound having physical properties suitable for a material for forming thin films by CVD, and particularly, a metal alkoxide compound having physical properties suitable for a material for forming metallic-copper thin films. A metal alkoxide compound is represented by general formula (I). A thin-film-forming material including the metal alkoxide compound is described as well. (In the formula, R 1 represents a methyl group or an ethyl group, R 2 represents a hydrogen atom or a methyl group, R 3 represents a C 1-3 linear or branched alkyl group, M represents a metal atom or a silicon atom, and n represents the valence of the metal atom or silicon atom.

  揭示了一种具有适合用于CVD形成薄膜材料的物理性质的金属烷氧化物化合物，特别是一种具有适合用于形成金属铜薄膜材料的金属烷氧化物化合物。金属烷氧化物化合物由通式（I）表示。还描述了包括金属烷氧化物化合物的薄膜形成材料。（在公式中，R1代表甲基基团或乙基基团，R2代表氢原子或甲基基团，R3代表C1-3直链或支链烷基基团，M代表金属原子或硅原子，n代表金属原子或硅原子的价。
• ALUMINUM COMPOUND AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE USING THE SAME
  申请人：Samsung Electronics Co., Ltd.

  公开号：US20200207790A1

  公开（公告）日：2020-07-02

  Provided are an aluminum compound and a method for manufacturing a semiconductor device using the same. The aluminum compound may be represented by Formula 1.

  提供了一种铝化合物以及使用它制造半导体器件的方法。该铝化合物可用公式1表示。
• THIN-FILM FORMING RAW MATERIAL FOR USE IN ATOMIC LAYER DEPOSITION METHOD, THIN-FILM FORMING RAW MATERIAL, METHOD FOR PRODUCING THIN-FILM, AND COMPOUND
  申请人：ADEKA CORPORATION

  公开号：US20210340162A1

  公开（公告）日：2021-11-04

  The present invention provides a thin-film forming raw material, which is used in an atomic layer deposition method, including a compound represented by the following general formula (1): where R 1 to R 4 each independently represent an alkyl group having 1 to 5 carbon atoms, and A 1 represents an alkanediyl group having 1 to 5 carbon atoms.

  本发明提供了一种薄膜形成原料，用于原子层沉积方法，包括由以下一般式（1）表示的化合物：其中R1至R4分别独立表示具有1至5个碳原子的烷基基团，A1表示具有1至5个碳原子的烷二基基团。
• NICKEL COMPOUND AND METHOD OF FORMING THIN FILM USING THE NICKEL COMPOUND
  申请人：Samsung Electronics Co., Ltd.

  公开号：US20150266913A1

  公开（公告）日：2015-09-24

  Provided are a heterostructured nickel compound including a nickel amidinate ligand and an aliphatic alkoxy group and a method of forming a thin film including the heterostructured nickel compound. The method includes forming a nickel-containing layer on a substrate by using the heterostructured nickel compound including the nickel amidinate ligand and the aliphatic alkoxy group.

  提供了一种异质结镍化合物，其中包括一种镍酰胺配体和一种脂肪族烷氧基，以及一种包括该异质结镍化合物的薄膜形成方法。该方法包括使用包括镍酰胺配体和脂肪族烷氧基的异质结镍化合物，在基板上形成含镍层。
• LANTHANUM COMPOUND, METHOD OF SYNTHESIZING LANTHANUM COMPOUND, LANTHANUM PRECURSOR COMPOSITION, METHOD OF FORMING THIN FILM, AND METHOD OF MANUFACTURING INTEGRATED CIRCUIT DEVICE
  申请人：PARK Gyu-hee

  公开号：US20170008914A1

  公开（公告）日：2017-01-12

  A silicon-containing intermediate is synthesized by reacting a lanthanum tris[bis(trialkylsilyl)amide] complex with an alkylcyclopentadiene. A lanthanum compound is synthesized by reacting the silicon-containing intermediate with a dialkylamidine-based compound.

  通过将镧三[双(三烷基硅基)胺基]配合物与烷基环戊二烯反应，合成了含硅中间体。通过将含硅中间体与二烷基胺基化合物反应，合成了一种镧化合物。