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2-methylthiothieno<3,2-b>thiophene | 40985-54-4

中文名称
——
中文别名
——
英文名称
2-methylthiothieno<3,2-b>thiophene
英文别名
2-Methylmercapto-thieno<3,2-b>thiophen;2-Methylthio-thieno<3,2-b>thiophen;2-methylsulfanyl-thieno[3,2-b]thiophene;2-methylthio-thieno[3,2-b]thiophene;2-Methylthiothieno[3,2-b]thiophene;5-methylsulfanylthieno[3,2-b]thiophene
2-methylthiothieno<3,2-b>thiophene化学式
CAS
40985-54-4
化学式
C7H6S3
mdl
——
分子量
186.323
InChiKey
XQDBYIKFYZFVEP-UHFFFAOYSA-N
BEILSTEIN
——
EINECS
——
  • 物化性质
  • 计算性质
  • ADMET
  • 安全信息
  • SDS
  • 制备方法与用途
  • 上下游信息
  • 反应信息
  • 文献信息
  • 表征谱图
  • 同类化合物
  • 相关功能分类
  • 相关结构分类

计算性质

  • 辛醇/水分配系数(LogP):
    3.6
  • 重原子数:
    10
  • 可旋转键数:
    1
  • 环数:
    2.0
  • sp3杂化的碳原子比例:
    0.14
  • 拓扑面积:
    81.8
  • 氢给体数:
    0
  • 氢受体数:
    3

反应信息

  • 作为反应物:
    描述:
    2-methylthiothieno<3,2-b>thiophene四氰基乙烯N,N-二甲基甲酰胺 为溶剂, 反应 24.0h, 以90%的产率得到2-Cyano-3-(5-methylsulfanyl-thieno[3,2-b]thiophen-2-yl)-but-2-enedinitrile
    参考文献:
    名称:
    Chalcogens as electron donors for selected nonlinear optic phores
    摘要:
    Three different heteroaromatic charge transfer chromophores, e.g. donor(D)acceptor(A)-substituted thieno[3,2-b]thiophenes 3 and 4, D-substituted thieno [2,3-c] pyridinium salts 7 and 2-(2'-thienyl)pyridinium salts 10 have been prepared, Alkylchalcogenic ethers were used as D-groups. The molecular first hyperpolarizabilities beta were determined by the EFISH method in the case of 3 and 4 and by the HRS method in the case of the ionic compounds 7 and 10, Substitution of the ether oxygen atom by sulfur increases markedly the beta value which is not further increased by the higher chalcogens selenium and tellurium.
    DOI:
    10.1039/p29960001377
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文献信息

  • Substituted thieno\x9b3,2b!thiophenes and their use
    申请人:Hoechst Aktiengesellschaft
    公开号:US05684165A1
    公开(公告)日:1997-11-04
    Compounds of the formula I ##STR1## in which R is a C.sub.1 - to C.sub.22 -alkyl radical, A.sup.1 and A.sup.2 are hydrogen or methyl or, A.sup.1 is hydrogen and A.sup.2 is the nitro group, and B is the cyano group, the nitro group or an electron-attracting organic group having a double bond which is in conjugation with the thieno\x9b3,2-b!thiophene ring system, have a high dipole moment and a high polarizability and are suitable for purposes of nonlinear optics. If R in the formula I is a C.sub.12 - to C.sub.22 -alkyl radical, monomolecular layers can be applied to a substrate by the Langmuir-Blodgett method. The resulting layer elements are suitable, inter alia, as waveguides.
    式I的化合物##STR1##中,R为C.sub.1-C.sub.22烷基基团,A.sup.1和A.sup.2为氢或甲基,或者A.sup.1为氢,A.sup.2为硝基基团,B为基,硝基基团或具有与噻吩\x9b3,2-b!噻吩环系共轭的电子吸引有机基团,具有高偶极矩和高极化度,适用于非线性光学目的。如果式I中的R为C.sub.12-C.sub.22烷基基团,则可以通过Langmuir-Blodgett法将单分子层应用于底物。由此产生的层元素适用于波导等用途。
  • Substituted thieno[3,2-b]thiophenes and their use
    申请人:HOECHST AKTIENGESELLSCHAFT
    公开号:EP0592919A1
    公开(公告)日:1994-04-20
    Compounds of the formula I in which Ris a C₁- to C₂₂-alkyl radical, A¹ and A²are hydrogen or methyl or A¹is hydrogen and A² is the nitro group, and Bis the cyano group, the nitro group or an electron-attracting organic group having a double bond which is in conjugation with the thieno[3,2-b]thiophene ring system, have a high dipole moment and a high polarizability and are suitable for purposes of nonlinear optics. If R in the formula I is a C₁₂- to C₂₂-alkyl radical, monomolecular layers can be applied to a substrate by the Langmuir-Blodgett method. The resulting layer elements are suitable, inter alia, as waveguides.
    式 I 的化合物 其中 Ris 是 C₁- 至 C₂₂ 烷基、 A¹ 和 A² 为氢或甲基,或 A¹为氢,A²为硝基,且 之二是基、硝基或具有与噻吩并[3,2-b]噻吩环系统共轭双键的引电子有机基团、 具有高偶极矩和高偏振性,适用于非线性光学。如果式 I 中的 R 是 C₁₂-至 C₂₂-烷基,则单分子层可通过 Langmuir-Blodgett 方法应用于基底。由此产生的层元件特别适合用作波导。
  • TREATING SOLUTION FOR ELECTRONIC PARTS, AND PROCESS FOR PRODUCING ELECTRONIC PARTS
    申请人:FINE POLYMERS CORPORATION
    公开号:US20150279654A1
    公开(公告)日:2015-10-01
    The invention provides an aqueous solution capable of selectively protecting a nitrogen-containing silicon compound from corrosion by a treating solution for etching, cleaning or the like, etching oxygen-containing, carbon-containing silicon in particular, and making a large etch rate difference between a nitrogen-containing silicon compound and an oxygen-containing silicon compound, and a process for producing electronic parts as well. The invention is embodied by a treating solution for electronic parts that is an aqueous solution containing one or two or more of anionic surface active agents represented by the following formulae (1), (2) and (3), and a process for producing an electronic part. wherein R 1 , R 2 , and R 3 stands for hydrogen or an alkyl or alkylene group having 1 to 4 carbon atoms, and X 1 stands for a functional group capable of becoming an anionic ion. wherein R 4 stands for hydrogen or an alkyl or alkylene group having 1 to 4 carbon atoms, X 2 stands for a functional group capable of becoming an anionic ion, and n stands for a natural number of greater than 2. wherein R 5 stands for hydrogen or an alkyl or alkylene group having 1 to 4 carbon atoms, and X 3 , and X 4 stands for a functional group capable of becoming an anionic ion.
  • US5432286A
    申请人:——
    公开号:US5432286A
    公开(公告)日:1995-07-11
  • US5684165A
    申请人:——
    公开号:US5684165A
    公开(公告)日:1997-11-04
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