dodecahydro-fluoren-9-one | 60604-26-4

• 分子结构分类: 有机化合物 - 有机氧化合物
• 英文名称: dodecahydro-fluoren-9-one
• 英文别名: Dodecahydro-fluoren-9-on；1,2,3,4,4a,4b,5,6,7,8,8a,9a-Dodecahydrofluoren-9-one
• CAS: 60604-26-4
• 化学式: C₁₃H₂₀O
• 分子量: 192.301
• InChiKey: XPGRPLDCZKUMRK-UHFFFAOYSA-N

计算性质

• 辛醇/水分配系数(LogP)：
  3.8
• 重原子数：
  14
• 可旋转键数：
  0
• 环数：
  3.0
• sp3杂化的碳原子比例：
  0.92
• 拓扑面积：
  17.1
• 氢给体数：
  0
• 氢受体数：
  1

反应信息

• 作为产物：
  描述：

  环己烯 、 alkaline earth salt of/the/ methylsulfuric acid 350.0 ℃ 、68.64 MPa 条件下， 生成 dodecahydro-fluoren-9-one
  参考文献：
  名称：

  Notes. Thermal Carbonylation of Cyclohexene.

  摘要：

  DOI：

  10.1021/jo01083a030

文献信息

• [EN] SULPHONIUM SALT INITIATORS<br/>[FR] INITIATEURS À BASE DE SELS DE SULFONIUM
  申请人：CIBA HOLDING INC

  公开号：WO2009047151A1

  公开（公告）日：2009-04-16

  Compounds of the formula (I), wherein X is a single bond, CRaRb O, S, NRC, NCORC, CO, SO or SO2; L, L1, L2, L3, L4, L5, L6, L7 and L8 are for example hydrogen, R1 or COT; T denotes T1 or O-T2; T1 and T2 for example are hydrogen, C1-C20alkyl, C3-C12cycloalkyl, C2-C20alkenyl, C5- C12cycloalkenyl, C6-C14aryl, C3-C12heteroaryl, C1-C20alkyl substituted by one or more D, C2- C20alkyl interrupted by one or more E, C2-C20alkyl substituted by one or more D and inter- rupted by one or more E or Q; R1, R2, R3, R4, Ra, Rb and Rc are T1; D is for example R5, OR5, SR5 or Q1; E is for example O, S, COO or Q2; R5 and R6 for example are hydrogen, C1- C12alkyl or phenyl; Q is for example C6-C12bicycloalkyl, C6-C12bicycloalkenyl or C6- C12tricycloalkyl; Q1 is for example, C6-C14aryl or C3-C12heteroaryl; Q2 is for example C6- C14arylene or C3-C12heteroarylene; Y is an anion; and M is a cation; provided that at least one of L, L1, L2, L3, L4, L5, L6, L7 and L8 is other than hydrogen; and provided that (i) at least one of T1 or T2 is a group Q; or (ii) at least one D is a group Q1; or (iii) at least one E is a group Q2; are suitable as photolatent catalysts.

  化合物的式子（I），其中X是单键，CRaRb O，S，NRC，NCORC，CO，SO或SO2; L，L1，L2，L3，L4，L5，L6，L7和L8例如是氢，R1或COT; T表示T1或O-T2; T1和T2例如是氢，C1-C20烷基，C3-C12环烷基，C2-C20烯基，C5-C12环烯基，C6-C14芳基，C3-C12杂芳基，被一个或多个D取代的C1-C20烷基，被一个或多个E中断的C2-C20烷基，被一个或多个D取代并被一个或多个E或Q中断的C2-C20烷基; R1，R2，R3，R4，Ra，Rb和Rc是T1; D例如是R5，OR5，SR5或Q1; E例如是O，S，COO或Q2; R5和R6例如是氢，C1-C12烷基或苯基; Q例如是C6-C12双环烷基，C6-C12双环烯基或C6-C12三环烷基; Q1例如是C6-C14芳基或C3-C12杂芳基; Q2例如是C6-C14芳撑基或C3-C12杂芳撑基; Y是阴离子; M是阳离子; 前提是L，L1，L2，L3，L4，L5，L6，L7和L8中至少有一个不是氢; 并且前提是（i）至少有一个T1或T2是Q组; 或（ii）至少有一个D是Q1组; 或（iii）至少有一个E是Q2组; 适用于光潜催化剂。
• Active-light-sensitive or radiation-sensitive resin composition, active-light-sensitive or radiation-sensitive film and pattern forming method, each using composition, and method for manufacturing electronic device
  申请人：FUJIFILM Corporation

  公开号：US10261417B2

  公开（公告）日：2019-04-16

  An active-light-sensitive or radiation-sensitive resin composition includes a resin (A) and a photoacid generator (B) capable of generating an acid upon irradiation with active light or radiation, in which the active-light-sensitive or radiation-sensitive resin composition contains at least a photoacid generator (B1) represented by the following General Formula (1) and a photoacid generator (B2) other than the photoacid generator (B1) as the photoacid generator (B).

  一种活性光敏或辐射敏感的树脂组合物，包括树脂（A）和光酸发生剂（B），该光酸发生剂（B）能够在活性光或辐射照射下生成酸，其中该活性光敏或辐射敏感的树脂组合物至少包含由下式（1）表示的光酸发生剂（B1）和除光酸发生剂（B1）之外的另一种光酸发生剂（B2）作为光酸发生剂（B）。
• BIPHENYL DERIVATIVE, RESIST BOTTOM LAYER MATERIAL, BOTTOM LAYER FORMING METHOD, AND PATTERNING PROCESS
  申请人：Kori Daisuke

  公开号：US20120252218A1

  公开（公告）日：2012-10-04

  A biphenyl derivative having formula (1) is provided wherein Ar1 and Ar2 denote a benzene or naphthalene ring, and x and z each are 0 or 1. A material comprising the biphenyl derivative or a polymer comprising recurring units of the biphenyl derivative is spin coated and heat treated to form a resist bottom layer having improved properties, optimum values of n and k, step coverage, etch resistance, heat resistance, solvent resistance, and minimized outgassing.

  提供公式（1）的二苯基衍生物，其中Ar1和Ar2表示苯环或萘环，x和z各自为0或1。含有该二苯基衍生物的材料或含有该二苯基衍生物重复单元的聚合物被旋涂并经热处理，以形成具有改进性能、最佳值的n和k、阶梯覆盖、蚀刻抗性、耐热性、耐溶剂性和最小化气体放出的抗蚀底层。
• [EN] SULPHONIUM SALT INITIATORS<br/>[FR] INITIATEURS DE SEL DE SULFONIUM
  申请人：CIBA HOLDING INC

  公开号：WO2009047105A1

  公开（公告）日：2009-04-16

  Compounds of the Formula (I), wherein L1, L'1, L'1, L2, L'2, L'2, L3, L'3, L'3, L4, L'4 and L'4 for example are hydrogen or COT; R, R' and R' for example are hydrogen,C6-C12aryl or C3-C20heteroaryl; X, X' and X' for exampleare O, S, single bond, NRa or NCORa, T is for example hydrogen, C1-C20alkyl, C3-C12cycloalkyl, C2- C20alkenyl, C5-C12cycloalkenyl, C7-C18cycloalkylenaryl, C5-C18cycloalkylenheteroaryl, C6- C14aryl, providedthat at least one of R, R' or R' is unsubstitutedor substituted C3- C20heteroaryl; and Y is an inorganic or organic anion; are suitable as photolatent acid generators.

  式(I)的化合物，其中L1，L'1，L'1，L2，L'2，L'2，L3，L'3，L'3，L4，L'4和L'4例如是氢或COT；R，R'和R'例如是氢，C6-C12芳基或C3-C20杂环芳基；X，X'和X'例如是O，S，单键，NRa或NCORa，T例如是氢，C1-C20烷基，C3-C12环烷基，C2-C20烯基，C5-C12环烯基，C7-C18环烷基芳基，C5-C18环烷基杂环芳基，C6-C14芳基，前提是至少有一个R，R'或R'是未取代或取代的C3-C20杂环芳基；而Y是无机或有机阴离子；适用于光酸发生剂。
• Compound for forming organic film, and organic film composition using the same, process for forming organic film, and patterning process
  申请人：SHIN-ETSU CHEMICAL CO., LTD.

  公开号：US10007183B2

  公开（公告）日：2018-06-26

  The invention provides a compound for forming an organic film having a partial structure represented by the following formula (ii), wherein the ring structures Ar1, Ar2 and Ar3 each represent a substituted or unsubstituted benzene ring or naphthalene ring; e is 0 or 1; R0 represents a hydrogen atom or a linear, branched or cyclic monovalent organic group having 1 to 30 carbon atoms; L0 represents a linear, branched or cyclic divalent organic group having 1 to 32 carbon atoms; and the methylene group constituting L0 may be substituted by an oxygen atom or a carbonyl group. There can be provided an organic film composition for forming an organic film having high dry etching resistance as well as advanced filling/planarizing characteristics.

  本发明提供了一种用于形成有机薄膜的化合物，其部分结构由下式(ii)表示、 其中，环结构 Ar1、Ar2 和 Ar3 分别代表取代或未取代的苯环或萘环；e 为 0 或 1；R0 代表氢原子或具有 1 至 30 个碳原子的线性、支链或环状一价有机基团；L0 代表具有 1 至 32 个碳原子的线性、支链或环状二价有机基团；构成 L0 的亚甲基可被氧原子或羰基取代。本发明可提供一种有机薄膜组合物，用于形成具有高抗干蚀刻性和高级填充/平面化特性的有机薄膜。