作者:Jun Tian、Kai Feng、Kang-Ning Yuan、Xing Li、Hong-Hong Chang、Wen-Chao Gao
DOI:10.1021/acs.joc.1c02269
日期:2022.3.4
3,4-Bisthiolated pyrroles constitute key cores in pyrrole-based semiconductors, and their electronic properties could be improved by the bisthio groups via the S-effect. Herein, a convenient method for the synthesis of 3,4-bisthiolated pyrroles has been developed through the AlCl3-catalyzed thiolation/cyclization of homopropargylic azides, and cyclic voltammetry and DFT calculations indicated that
3,4-二硫代吡咯构成了吡咯基半导体的关键核心,二硫基可以通过S效应改善其电子性能。在此,通过AlCl 3催化的同炔丙基叠氮化物的硫醇化/环化,开发了一种合成3,4-二硫醇化吡咯的简便方法,循环伏安法和DFT计算表明,所需的3,4-二硫醇化吡咯具有更高的HOMO轨道能量和比母体未取代的 2,5-二苯基吡咯更低的带隙。