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1-Isopropyl-cyclopentanol-(1)-methylaether | 55660-94-1

中文名称
——
中文别名
——
英文名称
1-Isopropyl-cyclopentanol-(1)-methylaether
英文别名
1-Methoxy-1-propan-2-ylcyclopentane
1-Isopropyl-cyclopentanol-(1)-methylaether化学式
CAS
55660-94-1
化学式
C9H18O
mdl
——
分子量
142.241
InChiKey
MCTJSCUCCWWDOO-UHFFFAOYSA-N
BEILSTEIN
——
EINECS
——
  • 物化性质
  • 计算性质
  • ADMET
  • 安全信息
  • SDS
  • 制备方法与用途
  • 上下游信息
  • 反应信息
  • 文献信息
  • 表征谱图
  • 同类化合物
  • 相关功能分类
  • 相关结构分类

计算性质

  • 辛醇/水分配系数(LogP):
    2.5
  • 重原子数:
    10
  • 可旋转键数:
    2
  • 环数:
    1.0
  • sp3杂化的碳原子比例:
    1.0
  • 拓扑面积:
    9.2
  • 氢给体数:
    0
  • 氢受体数:
    1

上下游信息

  • 上游原料
    中文名称 英文名称 CAS号 化学式 分子量

反应信息

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文献信息

  • SALT AND PHOTORESIST COMPOSITION CONTAINING THE SAME
    申请人:SUMITOMO CHEMICAL COMPANY, LIMITED
    公开号:US20190112265A1
    公开(公告)日:2019-04-18
    A salt comprising a group represented by the formula (aa): wherein X a and X b independently each represent an oxygen atom or a sulfur atom, and X 1 represents a C1-C12 saturated hydrocarbon group which has a moiety represented by formula (1 a ) or (2 a ):
    一种盐,其由公式(aa)表示的基团组成:其中Xa和Xb分别独立地表示氧原子或硫原子,而X1表示具有由公式(1a)或(2a)表示的基团的C1-C12饱和碳氢基团。
  • SALT, QUENCHER, RESIST COMPOSITION AND METHOD FOR PRODUCING RESIST PATTERN
    申请人:SUMITOMO CHEMICAL COMPANY, LIMITED
    公开号:US20210063875A1
    公开(公告)日:2021-03-04
    Disclosed are a salt represented by formula (I), a quencher, and a resist composition including the same:
    揭示了一种由化学式(I)表示的盐,一种淬火剂,以及包括它们的抗蚀组合物:
  • ONIUM SALT COMPOUND, CHEMICALLY AMPLIFIED RESIST COMPOSITION AND PATTERNING PROCESS
    申请人:Shin-Etsu Chemical Co., Ltd.
    公开号:US20210149301A1
    公开(公告)日:2021-05-20
    An onium salt having formula (1) serving as an acid diffusion inhibitor and a chemically amplified resist composition comprising the acid diffusion inhibitor are provided. When processed by lithography, the resist composition exhibits dissolution contrast, acid diffusion suppressing effect, and excellent lithography performance factors such as CDU, LWR and sensitivity.
    提供具有公式(1)的醇铵盐,作为酸扩散抑制剂和化学增强型抗蚀剂组合物。当通过光刻加工时,该抗蚀剂组合物表现出溶解对比度,抑制酸扩散效果以及出色的光刻性能因素,例如CDU,LWR和灵敏度。
  • COMPOUND, ACTINIC RAY-SENSITIVE OR RADIATION-SENSITIVE RESIN COMPOSITION, RESIST FILM, AND PATTERN FORMATION METHOD, AND METHOD FOR MANUFACTURING ELECTRONIC DEVICE USING SAME, AND ELECTRONIC DEVICE
    申请人:FUJIFILM CORPORATION
    公开号:US20160024005A1
    公开(公告)日:2016-01-28
    There is provided an actinic ray-sensitive or radiation-sensitive resin composition containing a compound represented by the following formula (1) or (2), and the formula (1) and (2) are defined as herein, and a resist film comprising the actinic ray-sensitive or radiation-sensitive resin composition, and a pattern forming method comprising a step of exposing the resist film, and a step of developing the exposed film, and a method for manufacturing an electronic device, comprising the pattern forming method, and an electronic device manufactured by the manufacturing method of an electronic device.
    提供了一种包含下列式子(1)或(2)所代表的化合物的光致射线敏感或辐射敏感的树脂组合物,其中式(1)和(2)的定义如本文所述,以及包括该光致射线敏感或辐射敏感的树脂组合物的光阻膜,以及包括曝光光阻膜的步骤和显影曝光膜的步骤的图案形成方法,以及包括图案形成方法的制造电子装置的方法,以及由电子装置的制造方法制造的电子装置。
  • SALT, ACID GENERATOR, RESIST COMPOSITION AND METHOD FOR PRODUCING RESIST PATTERN
    申请人:SUMITOMO CHEMICAL COMPANY, LIMITED
    公开号:US20220011668A1
    公开(公告)日:2022-01-13
    A salt represented by formula (I), an acid generator and a resist composition: wherein R 1 , R 2 and R 3 each represent a hydroxy group, —O—R 10 , —O—CO—O—R 10 , —O-L 1 -CO—O—R 10 ; R 4 , R 5 , R 6 , R 7 , R 8 and R 9 each represent a halogen atom, a hydroxy group, etc.; L 1 represents an alkanediyl group; R 10 represents an acid-labile group; X 1 , X 2 and X 3 each represent an oxygen atom or a sulfur atom; m1 and m7 represent an integer of 0 to 5, m2 to m6 and m8, m9 represent an integer of 0 to 4, in which 0≤m1+m7≤5, 0≤m2+m8≤4, 0≤m3+m9≤4, and at least one of m1, m2 and m3 represents an integer of 1 or more; X 4 represents a single bond, —CH 2 —, —O—, —S—, etc.; and AI − represents an organic anion.
    公式(I)表示的盐、酸发生剂和抗蚀组合物:其中R1、R2和R3分别表示羟基、—O—R10、—O—CO—O—R10、—O-L1-CO—O—R10;R4、R5、R6、R7、R8和R9分别表示卤素原子、羟基等;L1表示脂肪二烷基基团;R10表示酸敏感基团;X1、X2和X3分别表示氧原子或硫原子;m1和m7表示0到5的整数,m2到m6和m8、m9表示0到4的整数,其中0≤m1+m7≤5,0≤m2+m8≤4,0≤m3+m9≤4,并且m1、m2和m3中至少有一个表示1或更多的整数;X4表示单键,—CH2—,—O—,—S—等;AI-表示有机阴离子。
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