申请人:LAM RESEARCH AG
公开号:US11345852B2
公开(公告)日:2022-05-31
The present invention relates to an etchant composition, in particular to an aqueous masking layer etchant composition for use in the removal of tungsten-doped carbon masking layers from a surface of a substrate, such as a semiconductor wafer. The composition comprises (a) 10 to 40 wt. %, based on the total weight of the composition, of hydrogen peroxide; and (b) 0.1 to 2.0 wt. %, based on the total weight of the composition, of one or more corrosion inhibitors.
本发明涉及一种蚀刻剂组合物,尤其涉及一种水性掩蔽层蚀刻剂组合物,用于从基底(如半导体晶片)表面去除掺钨的碳掩蔽层。该组合物包括:(a) 基于组合物总重量的 10 至 40 重量百分比的过氧化氢;和 (b) 基于组合物总重量的 0.1 至 2.0 重量百分比的一种或多种腐蚀抑制剂。