2,5-dibromo-3-phenylthieno[3,2-b]thiophene | 65701-87-3

• 分子结构分类: 有机化合物 - 有机杂环化合物 - 噻吩并噻吩类
• 英文名称: 2,5-dibromo-3-phenylthieno[3,2-b]thiophene
• CAS: 65701-87-3
• 化学式: C₁₂H₆Br₂S₂
• 分子量: 374.12
• InChiKey: SLOOUMDCVMINJD-UHFFFAOYSA-N

计算性质

• 辛醇/水分配系数(LogP)：
  6.15
• 重原子数：
  16.0
• 可旋转键数：
  1.0
• 环数：
  3.0
• sp3杂化的碳原子比例：
  0.0
• 拓扑面积：
  0.0
• 氢给体数：
  0.0
• 氢受体数：
  2.0

反应信息

• 作为产物：
  描述：

  3-phenylthieno[3,2-b]thiophene 在 N-溴代丁二酰亚胺(NBS) 作用下， 以 氯仿 为溶剂， 生成 2,5-dibromo-3-phenylthieno[3,2-b]thiophene
  参考文献：
  名称：

  使用噻吩并[3,2-b]噻吩和苯并噻二唑共聚物的高性能、低压有机场效应晶体管

  摘要：

  一系列新型线性共轭共聚物，以不同的取代噻吩并[3,2- b ]噻吩（TTs）作为供体，乙炔作为π-桥和苯并噻二唑（BT）作为受体单元，通过钯-催化 Sonogashira 交叉偶联聚合。这些共轭聚合物的光学、电化学和热性能通过以下方式进行评估紫外-可见、荧光、循环伏安法和热重分析。这些易溶的 TT-BT 共聚物被用作底栅顶接触 (BGTC) 有机场效应晶体管 (OFET) 中的半导体沟道材料。OFET 器件显示出 p 沟道场效应行为，并在 -3 V 以下以高产率成功运行。与具有芳族侧链的那些相比，包含具有脂肪族侧链的TT的聚合物材料表现出更好的OFET性能。使用带有壬基 (C 9 H 19 ) 侧链的噻吩噻吩的 TT-BT 的 OFET 在饱和状态下显示出最高的空穴平均载流子迁移率，μ sat = 0.1 cm -2 V -1 s -1，开/关电流比，I ON / I OFF = 3.5 ×

  DOI：

  10.1039/d2tc01222g

文献信息

• Concise Syntheses, Polymers, and Properties of 3-Arylthieno[3,2-<i>b</i>]thiophenes
  作者：Asli Capan、Hojat Veisi、Ahmet C. Goren、Turan Ozturk

  DOI：10.1021/ma301604e

  日期：2012.10.23

  Thieno[3,2-b]thiophenes (TT), having pare-substituted phenyl groups at C-3, have been synthesized through a ring closure reaction, using P4S10, in moderate to high yields. Their absorbance studies displayed that the TT, having nitrophenyl group had the most red shift absorbance at 365 nm, which also showed the lowest optical band gap of 2.92 eV; the rest of the TTs had the absorbance between 300 and 302 nm. Cyclic voltammetry studies indicated that while all the TTs had the oxidation potentials above 1.0 V, the TT with dimethylaminophenyl group had the lowest oxidation potential of 1.33 V. The rest had the oxidation potentials between 1.6 and 1.99 V. The TTs were both electropolymerized and copolymerized with thiophene through Suzuki coupling reaction. Electropolymerized polymers indicated that while the polymer having strong electron donating dimethylaminophenyl group had the lowest oxidation potential of 0.97 V, the rest of the polymers displayed the potentials between 1.09 and 1.39 V. Their electronic band gaps varied between 1.86 and 2.46 eV. The CV-UV studies of the polymers, electro-deposited on ITO, showed absorbance maxima between 431 and 468 nm, and the lowest optical band gap was observed with the polymer having methoxyphenyl group (1.99 eV). The rest of the polymers had the optical band gaps between 2.05 and 2.19 eV. Regarding the copolymers, the one with methoxyphenyl group had the lowest oxidation potential of 0.75 V. They displayed absorption and emission maxima between 325 and 445 and 454-564 nm, respectively. Their optical and electronic band gaps varied between 2.0 and 2.5 eV. As the copolymer having strong electron donating methoxyphenyl group had the highest quantum yield, 0.64 eV, the one with strong electron withdrawing nitrophenyl group had the lowest quantum yield of 0.003 eV.