PHOTORESIST BASE MATERIAL, METHOD FOR PURIFICATION THEREOF, AND PHOTORESIST COMPOSITIONS
申请人:IDEMITSU KOSAN CO., LTD.
公开号:EP1553451A1
公开(公告)日:2005-07-13
A photoresist base material comprising an extreme ultra-violet reactive organic compound of the following formula (1),
wherein A is a central structure that is an aliphatic group having 1 to 50 carbon atoms, an aromatic group having 6 to 50 carbon atoms, an organic group containing these together or an organic group having a cyclic structure formed by repetition of these, each of B to D is an extreme ultra-violet reactive group, a group having reactivity to the action of a chromophore active to extreme ultra-violet, or a C1 to C50 aliphatic group, C6 to C50 aromatic group, an organic group containing these together or a substituent having a branched structure, containing such a reactive group, X to Z are single bonds or ether bonds, l to n are integers of 0 to 5 satisfying l + m + n ≥ 1, and A to D may contain a substituent having a heteroatom. The photoresist base material and a composition thereof enable ultrafine processing based on extreme ultra-violet.
一种光致抗蚀剂基底材料,包含下式(1)的极紫外活性有机化合物、
其中 A 是一个中心结构,它是一个具有 1 至 50 个碳原子的脂肪族基团、一个具有 6 至 50 个碳原子的芳香族基团、一个包含这些基团的有机基团或一个具有由这些基团重复形成的环状结构的有机基团;B 至 D 各为一个极紫外反应基团,一个对极紫外活性发色团的作用具有反应性的基团、或 C1 至 C50 脂肪族基团、C6 至 C50 芳香族基团、一起含有这些基团的有机基团或具有支链结构的取代基,其中含有这样的活性基团,X 至 Z 为单键或醚键,l 至 n 为 0 至 5 的整数,满足 l + m + n ≥ 1,A 至 D 可含有具有杂原子的取代基。光刻胶基底材料及其组合物可以实现基于极紫外线的超精细加工。