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5-(2-呋喃基)-1-甲基-1H-吡唑-3-羧酸 | 108128-39-8

中文名称
5-(2-呋喃基)-1-甲基-1H-吡唑-3-羧酸
中文别名
——
英文名称
5-[2]furyl-1-methyl-1H-pyrazole-3-carboxylic acid
英文别名
5-[2]Furyl-1-methyl-1H-pyrazol-3-carbonsaeure;5-(Furan-2-yl)-1-methyl-1H-pyrazole-3-carboxylic acid;5-(furan-2-yl)-1-methylpyrazole-3-carboxylic acid
5-(2-呋喃基)-1-甲基-1H-吡唑-3-羧酸化学式
CAS
108128-39-8
化学式
C9H8N2O3
mdl
——
分子量
192.174
InChiKey
XXEWHNSDJMBLBK-UHFFFAOYSA-N
BEILSTEIN
——
EINECS
——
  • 物化性质
  • 计算性质
  • ADMET
  • 安全信息
  • SDS
  • 制备方法与用途
  • 上下游信息
  • 反应信息
  • 文献信息
  • 表征谱图
  • 同类化合物
  • 相关功能分类
  • 相关结构分类

物化性质

  • 熔点:
    141.5-144

计算性质

  • 辛醇/水分配系数(LogP):
    0.9
  • 重原子数:
    14
  • 可旋转键数:
    2
  • 环数:
    2.0
  • sp3杂化的碳原子比例:
    0.11
  • 拓扑面积:
    68.3
  • 氢给体数:
    1
  • 氢受体数:
    4

安全信息

  • 海关编码:
    2934999090

SDS

SDS:494baf5f960acf6d9444cd22729d4bac
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上下游信息

  • 上游原料
    中文名称 英文名称 CAS号 化学式 分子量
  • 下游产品
    中文名称 英文名称 CAS号 化学式 分子量

反应信息

点击查看最新优质反应信息

文献信息

  • LIGANDS FOR ANTIBODY AND Fc-FUSION PROTEIN PURIFICATION BY AFFINITY CHROMATOGRAPHY
    申请人:Bittermann Holger
    公开号:US20130131321A1
    公开(公告)日:2013-05-23
    The present invention relates to the use for affinity purification of an antibody or an fragment of an antibody, of a ligand-substituted matrix comprising a support material and at least one ligand covalently bonded to the support material, the ligand being represented by formula (I) wherein Sp is a spacer group; v is 0 or 1; Am is an amide group —NR 1 —C(O)—, and wherein either NR 1 is attached to Ar 1 and —C(O)— is attached to Ar 2 , or —C(O)— is attached to Ar 1 and NR 1 is attached to Ar 2 ; and R 1 is hydrogen or C 1 to C 4 alkyl, preferably hydrogen or methyl; and more preferably hydrogen; Ar 1 is a divalent 5- or 6-membered substituted or unsubstituted aromatic ring; Ar 2 is 5- or 6-membered heterocyclic aromatic ring which is (a) attached to a further 5- or 6-membered aromatic ring via a single bond; or (b) fused to a further 5- or 6-membered aromatic ring as part of a multicyclic ring system; or (c) attached to at least one substituent selected from C 1 to C 4 alkyl; C 2 to C 4 alkenyl; C 2 to C 4 alkynyl; a halogen; C 1 to C 4 haloalkyl; hydroxyl-substituted C 1 to C 4 alkyl; C 1 to C 4 alkoxy; hydroxyl-substituted C 1 to C 4 alkoxy; C 1 to C 4 alkylamino; C 1 to C 4 alkylthio; and combinations thereof.
    本发明涉及使用具有支持材料和至少一种共价键合到支持材料的配体的替代基矩阵,用于亲和纯化抗体抗体片段,其中该配体由式(I)表示,其中Sp是一个空间基团;v为0或1;Am是一个酰胺基团-NR1-C(O)-,其中NR1连接到Ar1,-C(O)-连接到Ar2,或-C(O)-连接到Ar1,NR1连接到Ar2;R1是氢或C1到C4烷基,优选氢或甲基,更优选氢;Ar1是二价的5-或6-成员取代或未取代芳香环;Ar2是5-或6-成员的杂环芳香环,它(a)通过单键连接到另一个5-或6-成员的芳香环;或(b)作为多环环系统的一部分与另一个5-或6-成员的芳香环融合;或(c)连接到至少一个取代基,所述取代基选择自C1到C4烷基;C2到C4烯基;C2到C4炔基;卤素;C1到C4卤代烷基;羟基取代的C1到C4烷基;C1到C4烷氧基;羟基取代的C1到C4烷氧基;C1到C4烷基基;C1到C4烷基基;以及其组合。
  • Use of a chemical mechanical polishing (CMP) composition for polishing of cobalt comprising substrates
    申请人:BASF SE
    公开号:US10899945B2
    公开(公告)日:2021-01-26
    Use of a chemical mechanical polishing (CMP) composition (Q) for chemical mechanical polishing of a substrate (S) comprising (i) cobalt and/or (ii) a cobalt alloy and (iii) Ti N and/or TaN, wherein the CMP composition (Q) comprises (E) Inorganic particles (F) at least one organic compound comprising an amino-group and an acid group (Y), wherein said compound comprises n amino groups and at least n+1 acidic protons, wherein n is a integer≥1. (G) at least one oxidizer in an amount of from 0.2 to 2.5 wt.-% based on the total weight of the respective CMP composition, (H) an aqueous medium wherein the CMP composition (Q) has a pH of more than 6 and less than 9.
    一种化学机械抛光(CMP)组合物(Q),用于对包含(i)和/或(ii)和(iii)Ti N和/或TaN的基体(S)进行化学机械抛光,其中所述CMP组合物(Q)包含 (E) 无机颗粒 (F) 至少一种包含基和酸基(Y)的有机化合物,其中所述化合物包含n个基和至少n+1个酸性质子,其中n为整数≥1。(G) 至少一种氧化剂,其用量为 0.2 至 2.5 wt.- %,以混合物总重量为基准。(H) 一种介质,其中 CMP 组合物 (Q) 的 pH 值大于 6 但小于 9。
  • USE OF A CHEMICAL MECHANICAL POLISHING (CMP) COMPOSITION FOR POLISHING OF COBALT COMPRISING SUBSTRATES
    申请人:BASF SE
    公开号:EP3334794B1
    公开(公告)日:2020-02-19
  • CHEMICAL MECHANICAL POLISHING COMPOSITION
    申请人:BASF SE
    公开号:US20200299547A1
    公开(公告)日:2020-09-24
    The presently claimed subject matter is directed to a chemical mechanical polishing (CMP) composition comprising inorganic particles, at least one organic compound comprising an amino group and/or at least one acid group (Y), potassium persulfate, at least one corrosion inhibitor and an aqueous medium for polishing substrates of the semiconductor industry comprising cobalt and/or a cobalt alloy and TiN and/or TaN.
  • [EN] USE OF A CHEMICAL MECHANICAL POLISHING (CMP) COMPOSITION FOR POLISHING OF COBALT COMPRISING SUBSTRATES<br/>[FR] UTILISATION D'UNE COMPOSITION DE POLISSAGE CHIMICO-MÉCANIQUE (CMP) POUR LE POLISSAGE DE SUBSTRATS COMPRENANT DU COBALT
    申请人:BASF SE
    公开号:WO2017025536A1
    公开(公告)日:2017-02-16
    Use of a chemical mechanical polishing (CMP) composition (Q) for chemical mechanical polishing of a substrate (S) comprising (i) cobalt and/or (ii) a cobalt alloy and (iii) Ti N and /or TaN, wherein the CMP composition (Q) comprises (E) Inorganic particles (F) at least one organic compound comprising an amino-group and an acid group (Y), wherein said compound comprises n amino groups and at least n+1 acidic protons, wherein n is a integer ≥ 1. (G) at least one oxidizer in an amount of from 0.2 to 2.5 wt.-% based on the total weight of the respective CMP composition, (H) an aqueous medium wherein the CMP composition (Q) has a pH of more than 6 and less than 9.
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