15-crown-4 | 92970-41-7

• 分子结构分类: 有机化合物 - 有机氧化合物
• 英文名称: 15-crown-4
• 英文别名: 1,4,8,12-Tetraoxacyclopentadecane
• CAS: 92970-41-7
• 化学式: C₁₁H₂₂O₄
• 分子量: 218.293
• InChiKey: CRWZWBQWZASLBK-UHFFFAOYSA-N

物化性质

• 沸点：
  337.3±27.0 °C(Predicted)
• 密度：
  0.947±0.06 g/cm3(Predicted)

计算性质

• 辛醇/水分配系数(LogP)：
  0.5
• 重原子数：
  15
• 可旋转键数：
  0
• 环数：
  1.0
• sp3杂化的碳原子比例：
  1.0
• 拓扑面积：
  36.9
• 氢给体数：
  0
• 氢受体数：
  4

反应信息

• 作为产物：
  描述：

  4,8-二氧杂十一烷-1,11-二醇 在 lithium hydroxide 、 sodium hydroxide 作用下， 生成 15-crown-4
  参考文献：
  名称：

  冠醚的分子设计。七、未取代的 12-至 16-Crown-4 的合成和阳离子选择性

  摘要：

  用标题化合物对碱水溶液和一些重金属苦味酸盐进行溶剂萃取表明，对于除 Li+、Na+ 和 Ag+ 外的大多数阳离子，随着环尺寸从 12 增加到 16，萃取率单调下降。 然而，14-crown-4与较大的碱金属相比，Li+ 的可萃取性和选择性最高，而 15-crown-4 的 Ag+/TI+ 选择性最高。

  DOI：

  10.1246/bcsj.63.3044

文献信息

• OPTICALLY ACTIVE DIBENZAZEPINE DERIVATIVES
  申请人：Nippon Soda Co., Ltd.

  公开号：EP2264038A1

  公开（公告）日：2010-12-22

  It is to provide a novel optically active dibenzazepine derivative having a high utility value as an asymmetric phase-transfer catalyst. It is an optically active 6,7-dihydro-5H-dibenzo[c,e]azepine derivative represented by the following formula (1'), (wherein R represents a divalent organic group for cross-linking the 1st position and the 11th position; R1 and R2 are the same or different, and represent a hydrogen atom, halogen atom, or organic group, or R1 and R2 together represent a divalent organic group; R3' and R4' are the same or different and represent a monovalent organic group, or R3' and R4' together form an organic group that forms a cyclic structure comprising an onium nitrogen atom; Ar represents a monovalent organic group; * represents optical activity, i.e., that one axially asymmetric isomer is present in excess of the other axially asymmetric isomer with respect to a bond axis that constitutes the biphenyl structure of the compound; and X- represents a counter anion).

  提供一种新型光学活性二苯并氮杂卓衍生物，作为不对称相转移催化剂具有很高的实用价值。它是一种光学活性 6，7-二氢-5H-二苯并[c，e]氮杂卓衍生物，由下式（1'）表示，（其中 R 代表二价有机基团，用于交联第 1 位和第 11 位；R1 和 R2 相同或不同，代表氢原子、卤素原子或有机基团，或 R1 和 R2 一起代表二价有机基团；R3' 和 R4' 相同或不同，代表一价有机基团，或 R3' 和 R4' 共同形成一个有机基团，该有机基团形成包括一个鎓氮原子的环状结构；Ar 代表一价有机基团；* 代表光学活性，即.e.,代表光学活性，即相对于构成化合物联苯结构的键轴而言，一种轴向不对称异构体的存在量超过另一种轴向不对称异构体；以及 X- 代表反阴离子）。
• Optically active dibenzazepine derivatives
  申请人：Nippon Soda Co., Ltd.

  公开号：EP2264038B1

  公开（公告）日：2016-01-06
• PATTERN FORMING METHOD, COMPOSITION FOR FORMING UPPER LAYER FILM, RESIST PATTERN, AND METHOD FOR MANUFACTURING ELECTRONIC DEVICE
  申请人：FUJIFILM Corporation

  公开号：US20170184970A1

  公开（公告）日：2017-06-29

  Provided are a pattern forming method capable of providing good DOF, EL, and watermark defect performance, a resist pattern formed by the pattern forming method, a composition for forming an upper layer film, used in the pattern forming method, and a method for manufacturing an electronic device, including the pattern forming method. The pattern forming method includes a step a of coating an active-light-sensitive or radiation-sensitive resin composition onto a substrate to forming a resist film, a step b of coating a composition for forming an upper layer film onto the resist film to form an upper layer film on the resist film, a step c of exposing the resist film having the upper layer film formed thereon, and a step d of developing the exposed resist film using a developer including an organic solvent to form a pattern, in which a receding contact angle of water on a surface of the upper layer film is 80° or more.
• PATTERN FORMING METHOD, RESIST PATTERN, AND METHOD FOR MANUFACTURING ELECTRONIC DEVICE
  申请人：FUJIFILM Corporation

  公开号：US20170199460A1

  公开（公告）日：2017-07-13

  The present invention has an object to provide a pattern forming method capable of providing good DOF, a resist pattern formed by the pattern forming method, and a method for manufacturing an electronic device, including the pattern forming method. The pattern forming method of the present invention includes a step a of coating an active-light-sensitive or radiation-sensitive resin composition onto a substrate to form a resist film, a step b of coating a composition for forming an upper layer film onto the resist film to form an upper layer film on the resist film, a step c of exposing the resist film having the upper layer film formed thereon, and a step d of developing the exposed resist film using a developer including an organic solvent to form a pattern, in which the active-light-sensitive or radiation-sensitive resin composition contains a compound having a molecular weight of 870 or less, which generates an acid upon irradiation with active light or radiation.
• PATTERN FORMING METHOD, RESIST PATTERN, METHOD FOR MANUFACTURING ELECTRONIC DEVICE, AND ELECTRONIC DEVICE
  申请人：FUJIFILM Corporation

  公开号：US20170349686A1

  公开（公告）日：2017-12-07

  A pattern forming method includes the following steps (a) to (d): (a) applying an actinic ray-sensitive or radiation-sensitive resin composition including a resin capable of increasing a polarity by the action of an acid onto a substrate to form a resist film, (b) forming an upper layer film on the resist film, (c) exposing the resist film having the upper layer film formed thereon, and (d) developing the exposed resist film using an organic developer to form a pattern, in which the resin capable of increasing the polarity by the action of an acid includes an acid-decomposable repeating unit having an acid-leaving group a having 4 to 7 carbon atoms, and the maximum value of the number of carbon atoms and the protection rate of the acid-leaving group a satisfy specific conditions.