申请人:ROHM AND HAAS ELECTRONIC MATERIALS LLC
公开号:US20220043342A1
公开(公告)日:2022-02-10
Disclosed herein is a photoresist composition, comprising a first polymer formed by free radical polymerization, the first polymer comprising polymerized units formed from a monomer comprising an ethylenically unsaturated double bond and an acid-labile group; a photoacid generator; a quencher of formula (1):
wherein: R
1
is independently a hydrogen atom, C
1
-C
20
linear, C
3
-C
20
branched, or C
3-20
cyclic alkyl, the alkyl optionally comprising an —O— group other than at an alpha-position with respect to the amide C(O), or C
6
-C
20
aryl; R
2
is independently a hydrogen atom, C
1
-C
20
linear, C
3
-C
20
branched, or C
3
-C
20
cyclic alkyl, or C
6
-C
20
aryl; L is C
1
-C
20
linear or C
3
-C
20
branched alkylene comprising one or more heteroatom-containing groups independently selected from —O—, —S—, or —N(R
3
)—, wherein R
3
is selected from a hydrogen atom or C
1
-C
20
linear or C
3
-C
20
branched or cyclic alkyl; each of R
1
, R
2
, and L may independently be substituted or unsubstituted; wherein the quencher is free of crosslinkable groups; and a solvent.