申请人:Cabot Microelectronics Corporation
公开号:US20040266196A1
公开(公告)日:2004-12-30
The invention provides a method of polishing a substrate comprising (i) contacting a substrate comprising a noble metal layer with a chemical-mechanical polishing system comprising (a) a polishing component, (b) an oxidizing agent, and (c) a liquid carrier, and (ii) abrading at least a portion of the noble metal layer to polish the substrate. The polishing component is selected from the group consisting of an abrasive, a polishing pad, or a combination thereof, and the oxidizing agent is selected from the group consisting of bromates, bromites, hypobromites, chlorates, chlorites, hypochlorites, perchlorates, iodates, hypoiodites, periodates, peroxyacetic acid, organo-halo-oxy compounds, salts thereof, and combinations thereof. The chemical-mechanical polishing system has a pH of about 9 or less, and the oxidizing agent does not produce a substantial amount of elemental halogen. The invention also provides a method of polishing a substrate comprising a noble metal layer and a second layer using the aforementioned polishing system that further comprises a stopping compound.
本发明提供了一种抛光基底的方法,包括(i)将包含贵金属层的基底与化学机械抛光系统接触,该系统包含(a)抛光组分、(b)氧化剂和(c)液体载体,以及(ii)研磨贵金属层的至少一部分以抛光基底。抛光组分选自由研磨剂、抛光垫或其组合组成的组,氧化剂选自由溴酸盐、溴酸盐、次溴酸盐、氯酸盐、亚氯酸盐、次氯酸盐、高氯酸盐、碘酸盐、次碘酸盐、过碘酸盐、过氧乙酸、有机卤氧化合物、其盐及其组合组成的组。化学机械抛光系统的 pH 值约为 9 或更低,氧化剂不会产生大量的卤素元素。本发明还提供了一种使用上述抛光系统对包括贵金属层和第二层的基底进行抛光的方法,该抛光系统还包括一种止动化合物。