resulting SBT systems are planar (torsional angle <1°) and highly π‐conjugated. Charge transport is investigated for solution‐sheared films in field‐effect transistors demonstrating that SBT can enable good semiconducting materials with hole mobilities ranging from ≈0.03 to 1.7 cm2 V−1 s−1. Transport difference within this family is rationalized by film morphology, as accessed by grazing incidence X‐ray
通过用二
噻吩并
噻吩-2-基单元进行封端或共聚,合成了新的基于3,3'-二
硫代烷基-2,2'-联
噻吩(SBT)的小分子和聚合物半导体。单晶,分子轨道计算以及光学/电
化学数据表明,SBT核是完全平面的,可能是通过S(烷基)⋯S(
噻吩)分子内锁。因此,与基于常规3,3'-二烷基-2,2'-联
噻吩的半导体相比,所得的SBT系统是平面的(扭转角<1°)且高度π共轭。研究了场效应晶体管中溶液剪切薄膜的电荷传输,证明了SBT可以使空穴迁移率在≈0.03至1.7 cm 2 V -1 s -1之间的良好半导体材料成为可能。通过掠射入射X射线衍射实验可以通过薄膜形态来合理化该家族中的运输差异。