Composition for forming organic film, substrate for manufacturing semiconductor apparatus, method for forming organic film, patterning process, and polymer
申请人:SHIN-ETSU CHEMICAL CO., LTD.
公开号:US11181821B2
公开(公告)日:2021-11-23
The invention provides a composition for forming an organic film, which generates no by-product even under such a film formation condition in an inert gas to prevent substrate corrosion, which is capable of forming an organic film not only excellent in properties of filling and planarizing a pattern formed on a substrate but also favorable for dry etching resistance during substrate processing, and further which causes no fluctuation in film thickness of the film due to thermal decomposition even when a CVD hard mask is formed on the organic film. The composition for forming an organic film includes (A) a polymer having a repeating unit shown by the following general formula (1) and (B) an organic solvent.