N,N',N''-tris<2-(N-hydroxycarbamoyl)ethyl>-1,3,5-benzenetricarboxamide | 87834-24-0

• 分子结构分类: 有机化合物 - 有机酸及其衍生物 - 羧酸及其衍生物
• 英文名称: N,N',N''-tris<2-(N-hydroxycarbamoyl)ethyl>-1,3,5-benzenetricarboxamide
• 英文别名: N,N',N''-tris(2-(N-hydroxycarbamoyl)ethyl)-1,3,5-benzenetricarboxamide；N,N',N''-tris[2-(N-hydroxycarbamoyl)ethyl]-1,3,5-benzenetricarboxamide；1-N,3-N,5-N-tris[3-(hydroxyamino)-3-oxopropyl]benzene-1,3,5-tricarboxamide
• CAS: 87834-24-0
• 化学式: C₁₈H₂₄N₆O₉
• 分子量: 468.423
• InChiKey: VELGZURBXJRRBF-UHFFFAOYSA-N

物化性质

• 密度：
  1.464±0.06 g/cm3(Predicted)

计算性质

• 辛醇/水分配系数(LogP)：
  -4
• 重原子数：
  33
• 可旋转键数：
  12
• 环数：
  1.0
• sp3杂化的碳原子比例：
  0.33
• 拓扑面积：
  235
• 氢给体数：
  9
• 氢受体数：
  9

反应信息

• 作为反应物：
  描述：

  nickel(II) nitrate hexahydrate 、 N,N',N''-tris<2-(N-hydroxycarbamoyl)ethyl>-1,3,5-benzenetricarboxamide 以 further solvent(s) 为溶剂， 生成
  参考文献：
  名称：

  Yoshida, Isao; Murase, Ichiro; Motekaitis, Ramunas J., Canadian Journal of Chemistry, 1983, vol. 61, p. 2740 - 2744

  摘要：

  DOI：
• 作为产物：
  描述：

  均苯三甲酸 在 对甲苯磺酸 氢氧化钾 、 氯化亚砜 、 盐酸羟胺 作用下， 以 甲醇 、 乙醚 、 水 为溶剂， 反应 146.0h， 生成 N,N',N''-tris<2-(N-hydroxycarbamoyl)ethyl>-1,3,5-benzenetricarboxamide
  参考文献：
  名称：

  Yoshida, Isao; Murase, Ichiro; Motekaitis, Ramunas J., Canadian Journal of Chemistry, 1983, vol. 61, p. 2740 - 2744

  摘要：

  DOI：

文献信息

• Surface treating agents and treating process for semiconductors
  申请人：WAKO PURE CHEMICAL INDUSTRIES LTD

  公开号：EP0665582A2

  公开（公告）日：1995-08-02

  The concentration of AI on silicon surface is reduced to lose its influence on the growth rate of an oxide film during thermal oxidation when semiconductor surface treatment is carried out by a process for treating semiconductor surfaces which comprises a step of cleaning surfaces of semiconductors with a semiconductor surface treating agent comprising an inorganic or organic alkali, hydrogen peroxide and water as major components, and a step of rinsing the resulting surfaces with ultra-pure water, at least one of the semiconductor surface treating agent and the ultra-pure water containing as a complexing agent a compound having three or more groups in the molecule or a salt thereof.

  半导体表面处理工艺包括：用半导体表面处理剂清洗半导体表面的步骤，半导体表面处理剂的主要成分是无机或有机碱、过氧化氢和水；用超纯水冲洗所得表面的步骤，半导体表面处理剂和超纯水中至少有一种含有分子中含有三个或三个以上基团的化合物或其盐作为络合剂。 分子中含有三个或三个以上基团的化合物或其盐。
• AQUEOUS CLEANER FOR THE REMOVAL OF POST-ETCH RESIDUES
  申请人：ADVANCED TECHNOLOGY MATERIALS, INC.

  公开号：US20150307818A1

  公开（公告）日：2015-10-29

  Cleaning compositions and processes for cleaning post-plasma etch residue from a microelectronic device having said residue thereon. The composition achieves highly efficacious cleaning of the residue material, including titanium-containing, copper-containing, tungsten-containing, and/or cobalt-containing post-etch residue from the microelectronic device while simultaneously not damaging the interlevel dielectric, metal interconnect material, and/or capping layers also present thereon.
• US5580846A
  申请人：——

  公开号：US5580846A

  公开（公告）日：1996-12-03
• US9063431B2
  申请人：——

  公开号：US9063431B2

  公开（公告）日：2015-06-23
• [EN] NON-FLUORIDE CONTAINING COMPOSITION FOR THE REMOVAL OF RESIDUE FROM A MICROELECTRONIC DEVICE<br/>[FR] COMPOSITION NE CONTENANT PAS DE FLUORURE SERVANT À SUPPRIMER UN RÉSIDU D'UN DISPOSITIF MICRO-ÉLECTRONIQUE
  申请人：ADVANCED TECH MATERIALS

  公开号：WO2009032460A1

  公开（公告）日：2009-03-12

  Cleaning compositions and processes for removing residue from a microelectronic device having said residue thereon. The composition, which is substantially devoid of fluoride species, amine species, and organic solvents, achieves highly efficacious cleaning of the residue material, including post-etch residue, post-ash residue and/or post-CMP residue, from the microelectronic device while simultaneously not damaging the interlevel dielectric and metal interconnect material also present thereon.