18-phenoxyoctadecanethiol

• 分子结构分类: 有机化合物 - 苯类化合物 - 苯酚醚
• 英文名称: 18-phenoxyoctadecanethiol
• 英文别名: 18-Phenoxyoctadecane-1-thiol；18-phenoxyoctadecane-1-thiol
• 化学式: C₂₄H₄₂OS
• 分子量: 378.663
• InChiKey: CJWZIIKGQGCMIU-UHFFFAOYSA-N

计算性质

• 辛醇/水分配系数(LogP)：
  10.1
• 重原子数：
  26
• 可旋转键数：
  19
• 环数：
  1.0
• sp3杂化的碳原子比例：
  0.75
• 拓扑面积：
  10.2
• 氢给体数：
  1
• 氢受体数：
  2

反应信息

• 作为产物：
  描述：

  potassium phenolate 在 lithium aluminium tetrahydride 、 9-borabicyclo[3.3.1]nonane dimer 、 三苯基膦 、 偶氮二甲酸二乙酯 作用下， 以 四氢呋喃 、 乙醚 、 N,N-二甲基甲酰胺 为溶剂， 反应 172.67h， 生成 18-phenoxyoctadecanethiol
  参考文献：
  名称：

  Preparation of High Quality Electrical Insulator Self-Assembled Monolayers on Gold. Experimental Investigation of the Conduction Mechanism through Organic Thin Films

  摘要：

  Self-assembled monolayers (SAMS) form highly ordered, stable dielectrics on conductive surfaces. Being able to attach larger-area contacts in a MIM (metal-insulator-metal) diode, their electrical properties can be determined. In this paper, the electrical conduction through thiolate SAMS of different alkyl chain lengths formed on gold surfaces were studied and discussed. The influence of the headgroup with respect to the surface quality and prevention of short circuits is investigated. Phenoxy terminated alkanethiols were found to form high quality SAMS with perfect insulating properties. Synthesis of the required terminally substituted long chain thiols have been developed. The I(V) characteristics of MIM structures formed with these SAMS are measured and simulated according to theoretical tunneling models for electrical conductivity through thin organic layers. SAM based electronic devices will become especially important for future nanoscale applications, where they can serve as insulators, gate dielectric of FETs, resistors, and capacitor structures.

  DOI：

  10.1021/ja0548992

文献信息

• Method for Synthesizing Long-Chain Phosphonic Acid Derivatives and Thiol Derivatives
  申请人：Effenberger Franz

  公开号：US20080275273A1

  公开（公告）日：2008-11-06

  A process for synthesizing long-chain phosphonic acid derivatives and thiol derivative is disclosed. One embodiment provides organic compounds which can form a self-assembled monolayer and are obtained by reaction of an olefin with a thiocarboxylic acid and subsequent hydrogenation to give the thiol, or with a phosphite and subsequent hydrolysis to give the phosphonic acid.

  本发明揭示了一种合成长链膦酸衍生物和硫醇衍生物的过程。其中一种实施方式提供了有机化合物，它们可以形成自组装单层，并通过烯烃与硫代羧酸的反应和随后的氢化反应得到硫醇，或者通过膦酸酯和随后的水解反应得到膦酸。
• Compound used to form a self-assembled monolayer, layer structure, semiconductor component having a layer structure, and method for producing a layer structure
  申请人：Schmid Guenter

  公开号：US20060175603A1

  公开（公告）日：2006-08-10

  Embodiments of the invention provide a semiconductor component and a method of manufacture thereof. A semiconductor component comprises: a gate electrode layer adjacent a substrate, and a gate dielectric layer adjacent the gate electrode layer. The gate dielectric layer comprises a monolayer of at least one compound, wherein the compound has an aromatic or a condensed aromatic molecular group. The molecular group is capable of π-π interactions, which stabilize the monolayer. In an embodiment, the semiconductor component is an organic field effect transistor (OFET). In an embodiment of the invention, a method includes forming the monolayer using a liquid phase immersion process.

  本发明的实施例提供了一种半导体元件及其制造方法。半导体元件包括：与衬底相邻的栅极电极层，以及与栅极电极层相邻的栅极介电层。栅极介电层包括至少一种化合物的单层，其中化合物具有芳香族或缩合芳香族分子基团。分子基团能够发生π-π相互作用，从而稳定单层。在一个实施方案中，半导体元件是有机场效应晶体管（OFET）。在本发明的一个实施方案中，方法包括使用液相浸渍工艺形成单层。
• VERBINDUNG ZUR BILDUNG EINER SELBSTORGANISIERENDEN MONOLAGE, SCHICHTSTRUKTUR, HALBLEITERBAUELEMENT MIT EINER SCHICHTSTRUKTUR UND VERFAHREN ZUR HERSTELLUNG EINER SCHICHTSTRUKTUR
  申请人：Infineon Technologies AG

  公开号：EP1636826A2

  公开（公告）日：2006-03-22
• METHODE ZUR SYNTHESE VON LANGKETTIGEN PHOSPHONS[UREDERIVATEN UND THIOLDERIVATEN
  申请人：Qimonda AG

  公开号：EP1817804A2

  公开（公告）日：2007-08-15
• US7298013B2
  申请人：——

  公开号：US7298013B2

  公开（公告）日：2007-11-20