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5,5'-oxybis[2-hydroxyl-1H-isoindole-1,3(2H)-dione] | 504406-23-9

中文名称
——
中文别名
——
英文名称
5,5'-oxybis[2-hydroxyl-1H-isoindole-1,3(2H)-dione]
英文别名
2-Hydroxy-5-(2-hydroxy-1,3-dioxoisoindol-5-yl)oxyisoindole-1,3-dione
5,5'-oxybis[2-hydroxyl-1H-isoindole-1,3(2H)-dione]化学式
CAS
504406-23-9
化学式
C16H8N2O7
mdl
——
分子量
340.249
InChiKey
MMLANMWFUZQNEZ-UHFFFAOYSA-N
BEILSTEIN
——
EINECS
——
  • 物化性质
  • 计算性质
  • ADMET
  • 安全信息
  • SDS
  • 制备方法与用途
  • 上下游信息
  • 反应信息
  • 文献信息
  • 表征谱图
  • 同类化合物
  • 相关功能分类
  • 相关结构分类

计算性质

  • 辛醇/水分配系数(LogP):
    0.4
  • 重原子数:
    25
  • 可旋转键数:
    2
  • 环数:
    4.0
  • sp3杂化的碳原子比例:
    0.0
  • 拓扑面积:
    124
  • 氢给体数:
    2
  • 氢受体数:
    7

上下游信息

  • 下游产品
    中文名称 英文名称 CAS号 化学式 分子量

反应信息

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文献信息

  • Reactive photo acid-generating agent and heat-resistant photoresist composition with polyamide precursor
    申请人:Korea Research Institute of Chemical Technology
    公开号:US20030064315A1
    公开(公告)日:2003-04-03
    The present invention relates to a reactive photo acid-generating agent and a heat-resistant photoresist composition comprising the same. In particularly, the present invention relates to the heat-resistant photoresist composition comprising the photo acid-generating agent expressed by the following formula (1), which can increase the degree of polymerization, and polyamide oligomers having acetal or its cyclized derivatives, which have an ability of that light-exposed area is dissolved in the developer and light-unexposed area is convertible to a heat-resistant polymer in the latter heating process and thus, it can be used for passivation layer, buffer coat or layer-insulating film of the multilayer printed circuit board, 1 wherein 2 and R are the same as defined in the detailed description of the Invention.
    本发明涉及一种活性光酸生成剂和由其组成的耐热光刻胶组合物。特别是,本发明涉及一种耐热光刻胶组合物,该组合物包含由下式(1)表示的光酸生成剂(可提高聚合度)和具有缩醛或其环化衍生物的聚酰胺低聚物,后者具有使受光区域溶解在显影剂中和使未受光区域在后一加热过程中转化为耐热聚合物的能力,因此可用于多层印刷电路板的钝化层、缓冲涂层或层绝缘膜、 1 其中 2 和 R 与本发明详细说明中所定义的相同。
  • Bismide compound, acid generator and resist composition each containing the same, and method of forming pattern from the composition
    申请人:Maesawa Tsuneaki
    公开号:US20050038261A1
    公开(公告)日:2005-02-17
    The present invention relates to a novel bisimide compound useful as an acid generator for a chemically amplified resist composition used in manufacturing of semiconductor element and the like or a raw material for synthesizing heat resistant polymers, an acid generator and a resist composition using said compound and a method for pattern formation using said composition, and further relates to a synthetic n intermediate for a bisimide compound and a bis(N-hydroxy)phthalimide compound useful as an intermediate for a functional compound such as a heat resistant polymer or photosensitive material, and provides a bisimide compound shown by the general formula [1]: (wherein R and A 1 are as defined in claim 1. )
    本发明涉及一种新型双酰亚胺化合物,可用作用于制造半导体元件等的化学放大抗蚀剂组合物的酸发生器或合成耐热聚合物的原料,还涉及使用所述化合物的酸发生器和抗蚀剂组合物以及使用所述组合物的图案形成方法、并进一步涉及一种双亚胺化合物的合成 n 中间体和一种双(N-羟基)邻苯二甲酰亚胺化合物,可用作耐热聚合物或感光材料等功能化合物的中间体,并提供了通式[1]所示的双亚胺化合物: (其中 R 和 A 1 如权利要求 1. )
  • US6582879B2
    申请人:——
    公开号:US6582879B2
    公开(公告)日:2003-06-24
  • US7374857B2
    申请人:——
    公开号:US7374857B2
    公开(公告)日:2008-05-20
  • BISIMIDE COMPOUND, ACID GENERATOR AND RESIST COMPOSITION EACH CONTAINING THE SAME, AND METHOD OF FORMING PATTERN FROM THE COMPOSITION
    申请人:Wako Pure Chemical Industries, Ltd.
    公开号:EP1449833B1
    公开(公告)日:2009-09-09
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