[6-(6-Benzoylpyrene-1-carbonyl)pyren-1-yl]-phenylmethanone | 1616515-87-7

• 分子结构分类: 有机化合物 - 苯类化合物 - 芘
• 英文名称: [6-(6-Benzoylpyrene-1-carbonyl)pyren-1-yl]-phenylmethanone
• 英文别名: [6-(6-benzoylpyrene-1-carbonyl)pyren-1-yl]-phenylmethanone
• CAS: 1616515-87-7
• 化学式: C₄₇H₂₆O₃
• 分子量: 638.722
• InChiKey: HDSJZFSXGLYFEF-UHFFFAOYSA-N

物化性质

• 密度：
  1.362±0.06 g/cm3(Temp: 20 °C; Press: 760 Torr)(predicted)

计算性质

• 辛醇/水分配系数(LogP)：
  12.2
• 重原子数：
  50
• 可旋转键数：
  6
• 环数：
  10.0
• sp3杂化的碳原子比例：
  0.0
• 拓扑面积：
  51.2
• 氢给体数：
  0
• 氢受体数：
  3

反应信息

• 作为反应物：
  描述：

  [6-(6-Benzoylpyrene-1-carbonyl)pyren-1-yl]-phenylmethanone 在 甲醇 、 sodium tetrahydroborate 、 水 作用下， 反应 24.0h， 以90.4%的产率得到[6-[Hydroxy-[6-[hydroxy(phenyl)methyl]pyren-1-yl]methyl]pyren-1-yl]-phenylmethanol
  参考文献：
  名称：

  MONOMER FOR HARDMASK COMPOSITION AND HARDMASK COMPOSITION INCLUDING THE MONOMER AND METHOD OF FORMING PATTERNS USING THE HARDMASK COMPOSITION

  摘要：

  一种用以下化学式1表示的硬掩膜组合物的单体。

  公开号：

  US20140186777A1
• 作为产物：
  描述：

  1-芘甲酸 在 aluminum (III) chloride 、 草酰氯 作用下， 以 1,2-二氯乙烷 、 N,N-二甲基甲酰胺 为溶剂， 反应 60.0h， 生成 [6-(6-Benzoylpyrene-1-carbonyl)pyren-1-yl]-phenylmethanone
  参考文献：
  名称：

  MONOMER FOR HARDMASK COMPOSITION AND HARDMASK COMPOSITION INCLUDING THE MONOMER AND METHOD OF FORMING PATTERNS USING THE HARDMASK COMPOSITION

  摘要：

  一种用以下化学式1表示的硬掩膜组合物的单体。

  公开号：

  US20140186777A1

文献信息

• Composition for resist underlayer film formation, resist underlayer film and forming method thereof, production method of patterned substrate, and compound
  申请人：JSR CORPORATION

  公开号：US11126084B2

  公开（公告）日：2021-09-21

  A composition for resist underlayer film formation contains a compound having a group represented by formula (1), and a solvent. R1 represents an organic group having 2 to 10 carbon atoms and having a valency of (m+n), wherein the carbon atoms include two carbon atoms that are adjacent to each other, with a hydroxy group or an alkoxy group bonding to one of the two carbon atoms, and with a hydrogen atom bonding to another of the two carbon atoms; L1 represents an ethynediyl group or a substituted or unsubstituted ethenediyl group; R2 represents a hydrogen atom or a monovalent organic group having 1 to 20 carbon atoms; n is an integer of 1 to 3; * denotes a bonding site to a moiety other than the group represented by the formula (1) in the compound; and m is an integer of 1 to 3.

  一种用于形成抗蚀剂底层膜的组合物含有一种具有式（1）所代表基团的化合物和一种溶剂。R1 代表具有 2 至 10 个碳原子且化合价为（m+n）的有机基团，其中碳原子包括两个相邻的碳原子，羟基或烷氧基与这两个碳原子中的一个键合，氢原子与这两个碳原子中的另一个键合；L1 代表乙炔二基或取代或未取代的乙烯二基； R2 代表氢原子或具有 1 至 20 个碳原子的一价有机基团； n 是 1 至 3 的整数； * 表示与化合物中除式 (1) 所代表的基团以外的其他分子的键合位点；以及 m 是 1 至 3 的整数。
• COMPOSITION FOR RESIST UNDERLAYER FILM FORMATION, RESIST UNDERLAYER FILM AND FORMING METHOD THEREOF, PRODUCTION METHOD OF PATTERNED SUBSTRATE, AND COMPOUND
  申请人：JSR CORPORATION

  公开号：US20190243247A1

  公开（公告）日：2019-08-08

  A composition for resist underlayer film formation contains a compound having a group represented by formula (1), and a solvent. R 1 represents an organic group having 2 to 10 carbon atoms and having a valency of (m+n), wherein the carbon atoms include two carbon atoms that are adjacent to each other, with a hydroxy group or an alkoxy group bonding to one of the two carbon atoms, and with a hydrogen atom bonding to another of the two carbon atoms; L 1 represents an ethynediyl group or a substituted or unsubstituted ethenediyl group; R 2 represents a hydrogen atom or a monovalent organic group having 1 to 20 carbon atoms; n is an integer of 1 to 3; * denotes a bonding site to a moiety other than the group represented by the formula (1) in the compound; and m is an integer of 1 to 3.
• US9284245B2
  申请人：——

  公开号：US9284245B2

  公开（公告）日：2016-03-15
• MONOMER FOR HARDMASK COMPOSITION AND HARDMASK COMPOSITION INCLUDING THE MONOMER AND METHOD OF FORMING PATTERNS USING THE HARDMASK COMPOSITION
  申请人：LEE Sung-Jae

  公开号：US20140186777A1

  公开（公告）日：2014-07-03

  A monomer for a hardmask composition represented by the following Chemical Formula 1,

  一种用以下化学式1表示的硬掩膜组合物的单体。