A composition for resist underlayer film formation contains a compound having a group represented by formula (1), and a solvent. R1 represents an organic group having 2 to 10 carbon atoms and having a valency of (m+n), wherein the carbon atoms include two carbon atoms that are adjacent to each other, with a hydroxy group or an alkoxy group bonding to one of the two carbon atoms, and with a hydrogen atom bonding to another of the two carbon atoms; L1 represents an ethynediyl group or a substituted or unsubstituted ethenediyl group; R2 represents a hydrogen atom or a monovalent organic group having 1 to 20 carbon atoms; n is an integer of 1 to 3; * denotes a bonding site to a moiety other than the group represented by the formula (1) in the compound; and m is an integer of 1 to 3.
一种用于形成抗蚀剂底层膜的组合物含有一种具有式(1)所代表基团的化合物和一种溶剂。R1 代表具有 2 至 10 个碳原子且化合价为(m+n)的有机基团,其中碳原子包括两个相邻的碳原子,羟基或烷氧基与这两个碳原子中的一个键合,氢原子与这两个碳原子中的另一个键合;L1 代表
乙炔二基或取代或未取代的
乙烯二基; R2 代表氢原子或具有 1 至 20 个碳原子的一价有机基团; n 是 1 至 3 的整数; * 表示与化合物中除式 (1) 所代表的基团以外的其他分子的键合位点;以及 m 是 1 至 3 的整数。