Novel Gallium Complexes with Malonic Diester Anions as Molecular Precursors for the MOCVD of Ga
<sub>2</sub>
O
<sub>3</sub>
Thin Films
作者:Malte Hellwig、Ke Xu、Davide Barreca、Alberto Gasparotto、Manuela Winter、Eugenio Tondello、Roland A. Fischer、Anjana Devi
DOI:10.1002/ejic.200801062
日期:2009.3
assess their suitability as precursors for the metal-organic chemical vapour deposition (MOCVD) of Ga2O3 thin films. MOCVD of Ga2O3 thin films was carried out starting from compound 2 in light of the promising features of this precursor. The as-deposited layers are amorphous and can be transformed into the monoclinic β-Ga2O3 phase upon annealing at 1000 °C ex situ. The film morphology was studied by
五种不同的均质镓配合物与丙二酸二酯阴离子 [Ga(ROCOCHOCOR)3] [R = Me (1), Et (2), iPr (3), tBu (4) 和 SiMe3 (5)] 已被合成并表征为1H 和 13C NMR、IR 光谱、电子电离质谱 (EI-MS) 和单晶 X 射线衍射。通过热重研究评估所得化合物的热性能,以评估它们作为 Ga2O3 薄膜的金属有机化学气相沉积 (MOCVD) 前体的适用性。鉴于该前体的有前途的特征,从化合物 2 开始对 Ga2O3 薄膜进行 MOCVD。沉积后的层是非晶态的,在 1000 °C 异位退火后可以转变为单斜晶 β-Ga2O3 相。通过扫描电子显微镜(SEM)研究薄膜形貌,并通过能量色散X射线光谱(EDXS)和X射线光电子能谱(XPS)研究其组成。获得了几乎化学计量的 Ga2O3 薄膜,碳含量低。(© Wiley-VCH Verlag GmbH &