In this work, nitrogen-doped ZnO material was synthesized by the sol-gel method using zinc acetate as the precursor and urea as the nitrogen source (15, 20, 25 and 30% wt.). For comparative purposes, bare ZnO was also prepared. The influence of N doping on structural, morphological, optical and photocatalytic properties was investigated. The synthesized catalysts were characterized by XRD, SEM-EDS, diffuse reflectance UV-Vis spectroscopy, BET and XPS analysis. The photocatalytic activity of N-doped ZnO catalysts was evaluated during the degradation of a mixture of herbicides (2,4-D and picloram) under visible radiation ≥400 nm. The photo-absorption wavelength range of the N-doped ZnO samples was shifted to longer wavelength compared to those of the unmodified ZnO. Among different amounts of dopant agent, the 30% N-doped ZnO material showed higher visible-light activity compared with pure ZnO. Several degradation by-products were identified by using HPLC and ESI-MS/MS. The enhancement of visible photocatalytic activity of the N-doped ZnO semiconductor could be mainly due to their capability in reducing the electron-hole pair recombination.
本工作以
醋酸锌为前驱体,
尿素为氮源(质量分数15%、20%、25%、30%),通过溶胶-凝胶法合成了氮掺杂ZnO材料。为了比较的目的,还制备了裸ZnO。研究了N掺杂对结构、形态、光学和光催化性能的影响。通过 XRD、
SEM-EDS、漫反射紫外-可见光谱、BET 和 XPS 分析对合成的催化剂进行了表征。在≥400 nm的可见光辐射下,评估了
除草剂(
2,4-D和
毒莠定)混合物的降解过程中N掺杂ZnO催化剂的光催化活性。与未修饰的 ZnO 相比,N 掺杂 ZnO 样品的光吸收波长范围移动到更长的波长。在不同掺杂剂用量下,30% N掺杂的ZnO材料与纯ZnO相比表现出更高的可见光活性。使用 HPLC 和 ESI-MS/MS 鉴定了几种降解副产物。 N掺杂ZnO半导体可见光催化活性的增强主要是由于其减少电子空穴对复合的能力。