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5-ethoxyadamantan-2-one | 952426-87-8

中文名称
——
中文别名
——
英文名称
5-ethoxyadamantan-2-one
英文别名
——
5-ethoxyadamantan-2-one化学式
CAS
952426-87-8
化学式
C12H18O2
mdl
——
分子量
194.274
InChiKey
ODIVKMLJUQLBRE-UHFFFAOYSA-N
BEILSTEIN
——
EINECS
——
  • 物化性质
  • 计算性质
  • ADMET
  • 安全信息
  • SDS
  • 制备方法与用途
  • 上下游信息
  • 反应信息
  • 文献信息
  • 表征谱图
  • 同类化合物
  • 相关功能分类
  • 相关结构分类

计算性质

  • 辛醇/水分配系数(LogP):
    1.4
  • 重原子数:
    14
  • 可旋转键数:
    2
  • 环数:
    4.0
  • sp3杂化的碳原子比例:
    0.92
  • 拓扑面积:
    26.3
  • 氢给体数:
    0
  • 氢受体数:
    2

上下游信息

  • 上游原料
    中文名称 英文名称 CAS号 化学式 分子量

反应信息

  • 作为产物:
    描述:
    溴乙烷四丁基碘化铵 sodium hydride 作用下, 以 四氢呋喃 为溶剂, 反应 16.75h, 以77%的产率得到5-ethoxyadamantan-2-one
    参考文献:
    名称:
    WO2007/113634
    摘要:
    公开号:
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文献信息

  • SULFONIUM COMPOUND, RESIST COMPOSITION, AND PATTERN FORMING PROCESS
    申请人:Shin-Etsu Chemical Co., Ltd.
    公开号:US20180099928A1
    公开(公告)日:2018-04-12
    A sulfonium compound having formula (1) is provided wherein R 1 , R 2 and R 3 are a C 1 -C 20 monovalent hydrocarbon group which may contain a heteroatom, p=0-5, q=0-5, and r=0-4. A resist composition comprising the sulfonium compound is processed by lithography to form a resist pattern with improved LWR and pattern collapse.
    提供了一个具有式(1)的磺鎓化合物,其中R1,R2和R3是C1-C20单价含有杂原子的碳氢基团,p = 0-5,q = 0-5,r = 0-4。利用光刻技术处理含有该磺鎓化合物的抗蚀剂组合物,可形成具有改善的LWR和图案崩溃的抗蚀剂图案。
  • Dipeptidyl peptidase IV inhibitors and processes for their preparation and pharmaceutical compositions containing them
    申请人:Matrix Laboratories Ltd.
    公开号:US07985759B2
    公开(公告)日:2011-07-26
    The present invention relates to novel compounds representated by formula (I), where R, R1, R2, R3, X, Y, m, n are as defined. The present invention relates to compounds of the general formula I their derivatives, their analogs, their tautomeric forms, their stereoisomers, their diastereomers, their bioisosteres, their polymorphs, their pharmaceutically acceptable salts and pharmaceutically acceptable compositions containing them which are predominantly dipeptidyl peptidase IV inhibitors. The present invention also relates to the processes for the preparation of novel compounds of formula (I) and their use in treating type II diabetes and diabetic complications thereof and also for treating dislipidemia, hypercholesterolemia, obesity and hyperglycemia.
    本发明涉及由式(I)表示的新化合物,其中R,R1,R2,R3,X,Y,m,n的定义如下。本发明涉及通式I的化合物及其衍生物,类似物,互变异构体,立体异构体,对映异构体,生物等价物,多晶形,其药学上可接受的盐和包含它们的药学上可接受的组合物,这些化合物主要是二肽基肽酶IV抑制剂。本发明还涉及制备式(I)的新化合物的过程及其在治疗II型糖尿病及其并发症以及治疗血脂异常,高胆固醇血症,肥胖症和高血糖方面的用途。
  • NOVEL DIPEPTIDYL PEPTIDASE IV INHIBITORS AND PROCESSES FOR THEIR PREPARATION AND PHARMACEUTICAL COMPOSITIONS CONTAINING THEM
    申请人:Gopalan Balasubramanian
    公开号:US20100160302A1
    公开(公告)日:2010-06-24
    The present invention relates to novel compounds representated by formula (I), where R, R1, R2, R3, X, Y, m, n are as defined. The present invention relates to compounds of the general formula I their derivatives, their analogs, their tautomeric forms, their stereoisomers, their diastereomers, their bioisosteres, their polymorphs, their pharmaceutically acceptable salts and pharmaceutically acceptable compositions containing them which are predominantly dipeptidyl peptidase IV inhibitors. The present invention also relates to the processes for the preparation of novel compounds of formula (I) and their use in treating type II diabetes and diabetic complications thereof and also for treating dislipidemia, hypercholesterolemia, obesity and hyperglycemia.
    本发明涉及由式(I)所代表的新化合物,其中R,R1,R2,R3,X,Y,m,n如定义所示。本发明涉及通式I化合物及其衍生物、类似物、互变异构体、立体异构体、对映异构体、生物等构体、多晶型、其药学上可接受的盐和包含它们的药学上可接受的组合物,这些化合物主要是二肽基肽酶IV抑制剂。本发明还涉及制备式(I)的新化合物的过程,以及它们在治疗II型糖尿病及其并发症以及治疗血脂异常、高胆固醇血症、肥胖症和高血糖方面的应用。
  • NOVEL CARBOXYLIC ACID ONIUM SALT, CHEMICALLY AMPLIFIED RESIST COMPOSITION, AND PATTERN FORMING PROCESS
    申请人:Shin-Etsu Chemical Co., Ltd.
    公开号:US20170315442A1
    公开(公告)日:2017-11-02
    A carboxylic acid onium salt of formula (1) exerts a satisfactory acid diffusion control (or quencher) function. A resist composition comprising the carboxylic acid onium salt can be processed by DUV or EUV lithography to form a resist pattern with improved resolution, reduced LWR and minimal defects after development.
    式为(1)的羧酸铵盐具有令人满意的酸扩散控制(或淬灭)功能。包含该羧酸铵盐的抗蚀剂组合物可以通过DUV或EUV光刻技术进行加工,以形成具有改善分辨率、降低线宽粗糙度和开发后最小缺陷的抗蚀剂图案。
  • Sulfonium compound, resist composition, and patterning process
    申请人:Shin-Etsu Chemical Co., Ltd.
    公开号:US10025180B2
    公开(公告)日:2018-07-17
    A sulfonium salt containing an acid-eliminatable substituent group which is effective for improving contrast is highly soluble and uniformly dispersible. A resist composition comprising the sulfonium salt as photoacid generator forms a pattern with a high resolution, rectangularity, and reduced LWR.
    一种含有可消除酸性取代基的锍盐可有效提高对比度,具有高溶解性和均匀分散性。由该锍盐作为光酸发生器的抗蚀剂组合物形成的图案具有高分辨率、矩形度和较低的 LWR。
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