di-n-propyl telluride | 64501-17-3

• 分子结构分类: 有机化合物 - 有机氧化合物 - 有机含氧阴离子化合物
• 英文名称: di-n-propyl telluride
• 英文别名: dipropyl-telluride；Dipropyl-tellurid；Tellurium, dipropyl-；1-propyltellanylpropane
• CAS: 64501-17-3
• 化学式: C₆H₁₄Te
• 分子量: 213.777
• InChiKey: KRUFAFGSYUJCNO-UHFFFAOYSA-N

计算性质

• 辛醇/水分配系数(LogP)：
  2.35
• 重原子数：
  7
• 可旋转键数：
  4
• 环数：
  0.0
• sp3杂化的碳原子比例：
  1.0
• 拓扑面积：
  0
• 氢给体数：
  0
• 氢受体数：
  0

反应信息

• 作为反应物：
  描述：

  di-n-propyl telluride 在 zinc telluride 、 氢气 、 Dimethylzinc 作用下， 生成 propane-1-tellurol 、 Di-n-propylditellurid
  参考文献：
  名称：

  Reaction Chemistry of ZnTe Metalorganic Vapor-Phase Epitaxy

  摘要：

  The reaction chemistry of zinc telluride (ZnTe) metalorganic vapor-phase epitaxy (MOVPE) from dimethylzinc (DMZn), diethylzinc (DEZn), and diisopropyltelluride (DIPTe) has been studied using on-line gas chromatography and infrared spectroscopy. Two growth regimes have been discovered: one at low values of the II/VI ratio and the other at higher values of the II/VI ratio. In the first regime, the group VI compound is consumed in excess, while in the second regime, the group II compound is consumed in excess. The crossover point lies at II/VI = 5.0 for DMZn and at II/VI = 0.3 for DEZn. Stoichiometric ZnTe is deposited under all growth conditions. The excess DIPTe consumed is converted into volatile diisopropylditelluride and isopropyltellurol. Conversely, the excess DEZn or DMZn consumed produces zinc metal. These waste byproducts accumulate in the outlet of the reactor. The hydrocarbon products generated from the ethyl and isopropyl ligands are indicative of radical disproportionation, recombination, and hydrogenation reactions. However, the methyl ligands mainly undergo surface hydrogenation to produce methane.

  DOI：

  10.1021/jp963990c
• 作为产物：
  描述：

  alkaline earth salt of/the/ methylsulfuric acid 在 碲化氢 、 萘 、 sodium 作用下， 以 四氢呋喃 为溶剂， 反应 0.5h， 以80%的产率得到di-n-propyl telluride
  参考文献：
  名称：

  Bhasin, K.K.; Gupta, Vijay; Gautam, A., Synthetic Communications, 1990, vol. 20, # 14, p. 2191 - 2195

  摘要：

  DOI：

文献信息

• Conformal Properties of InSbTe Thin Films Grown at a Low Temperature by MOCVD for PRAM Applications
  作者：Jun-Ku Ahn、Hyun-Jin Cho、Kyoung-Woo Park、Soon-Gil Yoon

  DOI：10.1149/1.3363618

  日期：——

  The feasibility of InSbTe chalcogenide materials prepared by metallorganic chemical vapor deposition (MOCVD) for phase-change memory (PRAM) applications was demonstrated. Films grown below 225°C exhibited an amorphous structure, and the films grown at 300°C included various crystalline phases such as In-Sb-Te, In―Sb, In-Te, and Sb-Te. The composition of the amorphous films grown at 225°C was dependent

  证明了通过金属有机化学气相沉积 (MOCVD) 制备的 InSbTe 硫属化物材料用于相变存储器 (PRAM) 应用的可行性。在 225°C 以下生长的薄膜呈现出非晶结构，而在 300°C 下生长的薄膜包括各种晶相，例如 In-Sb-Te、In-Sb、In-Te 和 Sb-Te。在 225°C 生长的非晶薄膜的成分取决于工作压力。225℃下生长的薄膜形态光滑，均方根粗糙度小于1 nm，在纵横比为5:1的沟槽结构上生长的薄膜阶梯覆盖率大于90%。沉积时间的增加提高了填充率，同时保持了共形阶梯覆盖。
• Alkylvinyl tellurides from tellurium, acetylene and alkyl halides
  作者：B.A. Irofimov、N.K. Gusarova、A.A. Tatarinova、V.A. Potapov、L.M. Sinegovskaya、S.V. Amosova、M.G. Voronkov

  DOI：10.1016/s0040-4020(01)90114-0

  日期：1988.1

  Synthetic routes to alkylvinyl tellurides by direct reaction of metallic tellurium, acetylene and alkyl halide in the system KOH-SnCl2-H2O and successive interaction of divinyl telluride with lithium and alkyl halide in liquid ammonia have been developed.

  通过金属碲，乙炔和卤代烷在KOH-SnCl 2 -H 2 O体系中的直接反应以及碲化二乙烯与锂和卤代烷在液氨中的连续相互作用，已开发出合成烷基乙烯基碲的途径。
• Korchevin, N. A.; Podkuiko, P. A.; Stankevich, V. K., Russian Journal of General Chemistry, 1995, vol. 65, # 1.2, p. 85 - 87
  作者：Korchevin, N. A.、Podkuiko, P. A.、Stankevich, V. K.、Deryagina, E. N.、Trofimov, B. A.

  DOI：——

  日期：——
• Gusarova, N. K.; Trofimov, B. A.; Tatarinova, A. A., Journal of Organic Chemistry USSR (English Translation), 1988, vol. 24, p. 1686 - 1691
  作者：Gusarova, N. K.、Trofimov, B. A.、Tatarinova, A. A.、Potapov, V. A.、Sinegovskaya, L. M.、at al.

  DOI：——

  日期：——
• BHASIN, K. K.;CUPTA, VIJAY;GAUTAM, A.;SHARMA, R. P., SYNTH. COMMUN. , 20,(1990) N4, C. 2191-2195
  作者：BHASIN, K. K.、CUPTA, VIJAY、GAUTAM, A.、SHARMA, R. P.

  DOI：——

  日期：——