Synthesis and FET characteristics of phenylene-vinylene and anthracene-vinylene compounds containing cyano groups
作者:Kohei Shoji、Jun-ichi Nishida、Daisuke Kumaki、Shizuo Tokito、Yoshiro Yamashita
DOI:10.1039/c0jm00715c
日期:——
A series of oligo-p-phenylene-vinylenes (OPVs) 1–3 and anthracene-vinylenes (AVs) 4–6 containing cyano groups have been synthesized and their photophysical, electrochemical and carrier transporting properties have been systematically examined. OPVs 2a and b, having cyano groups at the α-vinyl position, exhibited higher electron-accepting properties. Reduction peaks of OPV 2a in the cyclic voltammograms were observed as two-step reversible waves. OPVs 2a and b showed high electron mobilities in FET devices with bottom contact configuration. On the contrary, OPV 3a, which has cyano groups at the β-vinyl position, exhibited a high electron mobility of 0.3 cm2 V−1 s−1 with a top contact configuration. Introduction of biphenyl units enhanced the fluorescence efficiency in the solid state. In the case of AVs 5 and 6, cyano groups introduced at the 9 and 10-positions play an important role in injecting and transporting electrons. FET devices based on AVs 5 and 6 showed ambipolar behavior in the same device conditions.
我们合成了一系列含有氰基的低聚对苯二甲乙烯(OPVs)1-3 和蒽乙烯(AVs)4-6,并系统地研究了它们的光物理、电化学和载流子传输特性。在α-乙烯基位置上含有氰基的 OPV 2a 和 b 具有更高的电子接受特性。在循环伏安图中,观察到 OPV 2a 的还原峰为两步可逆波。OPV 2a 和 b 在具有底部触点结构的场效应晶体管器件中显示出较高的电子迁移率。相反,在β-乙烯基位置含有氰基的 OPV 3a 在顶部接触结构中表现出 0.3 cm2 V-1 s-1 的高电子迁移率。联苯单元的引入提高了固态荧光效率。就 AVs 5 和 6 而言,在 9 位和 10 位引入的氰基在注入和传输电子方面发挥了重要作用。基于 AVs 5 和 6 的场效应晶体管器件在相同的器件条件下显示出伏极性。