1-(2-Methoxyethoxy)-2,2,6,6-tetramethylheptane-3,5-dione | 191164-17-7

• 分子结构分类: 有机化合物 - 有机氧化合物
• 英文名称: 1-(2-Methoxyethoxy)-2,2,6,6-tetramethylheptane-3,5-dione
• CAS: 191164-17-7
• 化学式: C₁₄H₂₆O₄
• 分子量: 258.35
• InChiKey: MIAJKNFXBPVTCU-UHFFFAOYSA-N

计算性质

• 辛醇/水分配系数(LogP)：
  1.8
• 重原子数：
  18
• 可旋转键数：
  9
• 环数：
  0.0
• sp3杂化的碳原子比例：
  0.86
• 拓扑面积：
  52.6
• 氢给体数：
  0
• 氢受体数：
  4

文献信息

• METAL ALKOXIDE COMPOUND, THIN-FILM-FORMING MATERIAL, METHOD FOR PRODUCING THIN FILM, AND ALCOHOL COMPOUND
  申请人：ADEKA CORPORATION

  公开号：US20150175642A1

  公开（公告）日：2015-06-25

  Disclosed is a metal alkoxide compound having physical properties suitable for a material for forming thin films by CVD, and particularly, a metal alkoxide compound having physical properties suitable for a material for forming metallic-copper thin films. A metal alkoxide compound is represented by general formula (I). A thin-film-forming material including the metal alkoxide compound is described as well. (In the formula, R 1 represents a methyl group or an ethyl group, R 2 represents a hydrogen atom or a methyl group, R 3 represents a C 1-3 linear or branched alkyl group, M represents a metal atom or a silicon atom, and n represents the valence of the metal atom or silicon atom.

  揭示了一种具有适合用于CVD形成薄膜材料的物理性质的金属烷氧化物化合物，特别是一种具有适合用于形成金属铜薄膜材料的金属烷氧化物化合物。金属烷氧化物化合物由通式（I）表示。还描述了包括金属烷氧化物化合物的薄膜形成材料。（在公式中，R1代表甲基基团或乙基基团，R2代表氢原子或甲基基团，R3代表C1-3直链或支链烷基基团，M代表金属原子或硅原子，n代表金属原子或硅原子的价。
• ORGANOMETALLIC COMPOUND AND METHOD OF MANUFACTURING INTEGRATED CIRCUIT USING THE SAME
  申请人：SAMSUNG ELECTRONICS CO., LTD.

  公开号：US20210388010A1

  公开（公告）日：2021-12-16

  An organometallic compound and a method of manufacturing an integrated circuit (IC) device, the organometallic compound being represented by Formula (I),

  一种有机金属化合物和一种制造集成电路（IC）器件的方法，该有机金属化合物由式（I）表示，
• ALUMINUM COMPOUND AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE USING THE SAME
  申请人：Samsung Electronics Co., Ltd.

  公开号：US20200207790A1

  公开（公告）日：2020-07-02

  Provided are an aluminum compound and a method for manufacturing a semiconductor device using the same. The aluminum compound may be represented by Formula 1.

  提供了一种铝化合物以及使用它制造半导体器件的方法。该铝化合物可用公式1表示。
• ALKOXIDE COMPOUND, RAW MATERIAL FOR FORMING THIN FILM, METHOD FOR MANUFACTURING THIN FILM, AND ALCOHOL COMPOUND
  申请人：ADEKA CORPORATION

  公开号：US20170121358A1

  公开（公告）日：2017-05-04

  An alkoxide compound is represented by General Formula (I) below: wherein R 1 to R 3 each independently represent hydrogen, a C 1-12 hydrocarbon group, etc.; R 4 represents a C 1-12 hydrocarbon group, etc.; L represents hydrogen, halogen, a hydroxyl group, an amino group, an azi group, a phosphido group, a nitrile group, a carbonyl group, a C 1-12 hydrocarbon group, etc.; and M represents a metal atom or a silicon atom, n represents an integer of 1 or more, m represents an integer of 0 or more, and n+m represents the valence of the metal atom or silicon atom.

  一种烷氧化合物由下面的一般式（I）表示：其中R1至R3分别独立表示氢、C1-12烃基等；R4表示C1-12烃基等；L表示氢、卤素、羟基、氨基、假氮基、磷基、腈基、羰基、C1-12烃基等；M表示金属原子或硅原子，n表示1或更多的整数，m表示0或更多的整数，n+m表示金属原子或硅原子的价数。
• THIN-FILM FORMING RAW MATERIAL FOR USE IN ATOMIC LAYER DEPOSITION METHOD, THIN-FILM FORMING RAW MATERIAL, METHOD FOR PRODUCING THIN-FILM, AND COMPOUND
  申请人：ADEKA CORPORATION

  公开号：US20210340162A1

  公开（公告）日：2021-11-04

  The present invention provides a thin-film forming raw material, which is used in an atomic layer deposition method, including a compound represented by the following general formula (1): where R 1 to R 4 each independently represent an alkyl group having 1 to 5 carbon atoms, and A 1 represents an alkanediyl group having 1 to 5 carbon atoms.

  本发明提供了一种薄膜形成原料，用于原子层沉积方法，包括由以下一般式（1）表示的化合物：其中R1至R4分别独立表示具有1至5个碳原子的烷基基团，A1表示具有1至5个碳原子的烷二基基团。