21,40-Dibromo-7,14,25,32-tetrazaundecacyclo[21.13.2.22,5.03,19.04,16.06,14.08,13.020,37.024,32.026,31.034,38]tetraconta-1(37),2(40),3(19),4(16),5(39),6,8,10,12,17,20,22,24,26,28,30,34(38),35-octadecaene-15,33-dione | 956135-85-6

• 分子结构分类: 有机化合物 - 苯类化合物 - 菲及其衍生物
• 英文名称: 21,40-Dibromo-7,14,25,32-tetrazaundecacyclo[21.13.2.22,5.03,19.04,16.06,14.08,13.020,37.024,32.026,31.034,38]tetraconta-1(37),2(40),3(19),4(16),5(39),6,8,10,12,17,20,22,24,26,28,30,34(38),35-octadecaene-15,33-dione
• CAS: 956135-85-6
• 化学式: C₃₆H₁₄Br₂N₄O₂
• 分子量: 694.341
• InChiKey: VNHQNPRZIYSGOA-UHFFFAOYSA-N

计算性质

• 辛醇/水分配系数(LogP)：
  8.7
• 重原子数：
  44
• 可旋转键数：
  0
• 环数：
  11.0
• sp3杂化的碳原子比例：
  0.0
• 拓扑面积：
  69.8
• 氢给体数：
  0
• 氢受体数：
  4

文献信息

• METHOD FOR PRODUCING ORGANIC FIELD-EFFECT TRANSISTORS
  申请人：Konemann Martin

  公开号：US20070259475A1

  公开（公告）日：2007-11-08

  A method for producing an organic field-effect transistor, comprising the steps of: a) providing a substrate comprising a gate structure, a source electrode and a drain electrode located on the substrate, and b) applying an n-type organic semiconducting compound to the area of the substrate where the gate structure, the source electrode and the drain electrode are located, wherein the n-type organic semiconducting compound is selected from the group consisting of compounds of the formula I wherein R 1 , R 2 , R 3 and R 4 are independently hydrogen, chlorine or bromine, with the proviso that at least one of these radicals is not hydrogen, Y 1 is O or NR a , wherein R a is hydrogen or an organyl residue, Y 2 is O or NR b , wherein R b is hydrogen or an organyl residue, Z 1 , Z 2 , Z 3 and Z 4 are O, where, in the case that Y 1 is NR a , one of the residues Z 1 and Z 2 may be a NR c group, where R a and R c together are a bridging group having 2 to 5 atoms between the terminal bonds, where, in the case that Y 2 is NR b , one of the residues Z 3 and Z 4 may be a NR d group, where R b and R d together are a bridging group having 2 to 5 atoms between the terminal bonds.
• US7910736B2
  申请人：——

  公开号：US7910736B2

  公开（公告）日：2011-03-22
• [EN] METHOD FOR PRODUCING ORGANIC FIELD-EFFECT TRANSISTORS<br/>[FR] PROCÉDÉ DE PRODUCTION DE TRANSISTORS À EFFET DE CHAMP ORGANIQUES
  申请人：BASF AG

  公开号：WO2007128774A1

  公开（公告）日：2007-11-15

  [EN] A method for producing an organic field-effect transistor, comprising the steps of: a) providing a substrate comprising a gate structure, a source electrode and a drain electrode located on the substrate, and b) applying an n-type organic semiconducting compound to the area of the substrate where the gate structure, the source electrode and the drain electrode are located, wherein the n-type organic semiconducting compound is selected from the group consisting of compounds of the formula (I) wherein R¹, R², R³ and R⁴ are independently hydrogen, chlorine or bromine, with the proviso that at least one of these radicals is not hydrogen, Y¹ is O or NR^a, wherein R^a is hydrogen or an organyl residue, Y² is O or NR^b, wherein R^b is hydrogen or an organyl residue, Z¹, Z², Z³ and Z⁴ are O, where, in the case that Y¹ is NR^a, one of the residues Z¹ and Z² may be a NR^c group, where R^a and R^c together are a bridging group having 2 to 5 atoms between the terminal bonds, where, in the case that Y² is NR^b, one of the residues Z³ and Z⁴ may be a NR^d group, where R^b and R^d together are a bridging group having 2 to 5 atoms between the terminal bonds.
  [FR] La présente invention concerne un procédé de production d'un transistor à effet de champ organique. A cet effet, a) on prend un substrat comprenant une structure de grille, une électrode source, et une électrode collectrce située sur le substrat, et b) un applique un composé organique semiconducteur de type n sur la zone du substrat occupée par la structure de grille, l'électrode source, et l'électrode collectrice. En l'occurrence, le composé organique semiconducteur de type n est choisi dans un groupe constitué de composés représentés par la formule (I). Dans cette formule, R¹, R², R³ et R⁴ sont indépendamment hydrogène, chlore ou brom (à la condition que l'un au moins de ces radicaux ne soit pas hydrogène). Y¹ est O ou NR^a, R^a étant hydrogène ou un résidu organyle. Y² est O ou NR^b, R^b étant hydrogène ou un résidu organyle. Z¹, Z², Z³ et Z⁴ sont O. Toutefois, si Y¹ est NR^a, l'un des résidus Z¹ et Z² peut être un groupe NR^c dans lequel R^a et R^c forment ensemble un groupe en pont portant 2 à 5 atomes entre les liaisons terminale bonds. En outre, su Y² est NR^b, l'un des résidus Z³ et Z⁴ peut être un groupe NR^d group. Et enfin, R^b et R^d forment ensemble un groupe en pont portant 2 à 5 atomes entre les liaisons terminales.