yttrium di-pivaloyl-methanate

• 分子结构分类: 有机化合物 - 有机氧化合物
• 英文名称: yttrium di-pivaloyl-methanate
• 英文别名: tris(2,2,6,6-tetramethyl-3,5-heptadionato) yttrium(III)；Y(dipivaloylmethante)3；tris(2,2,6,6-tetramethyl-3,5-heptanedionato)yttrium；yttrium 2,2,6,6-tetramethyl-3,5-heptanedionate；tris(2,2,6,6-tetramethyl-3,5-heptanedionate)Y(III)；yttrium(III) dipivaloylmethanate；Y(dipivaloylmethanate)3；Y(tmhd)3；Y(dpm)3
• 化学式: 3C₁₁H₁₉O₂*Y
• 分子量: 638.718
• InChiKey: ANTIZXWENNGNJQ-CFYXSCKTSA-M

计算性质

• 辛醇/水分配系数(LogP)：
  1.89
• 重原子数：
  14.0
• 可旋转键数：
  1.0
• 环数：
  0.0
• sp3杂化的碳原子比例：
  0.73
• 拓扑面积：
  40.13
• 氢给体数：
  0.0
• 氢受体数：
  2.0

反应信息

• 作为反应物：
  描述：

  yttrium di-pivaloyl-methanate 以 neat (no solvent) 为溶剂， 生成 yttrium(III) oxide
  参考文献：
  名称：

  10.1007/s10789-008-1011-0

  摘要：

  DOI：

  10.1007/s10789-008-1011-0
• 作为产物：
  描述：

  2,2,6,6-四甲基-3,5-庚二酮 、 yttrium(III) chloride triisopropanolate 在 三乙胺 作用下， 以 苯 为溶剂， 以48%的产率得到yttrium di-pivaloyl-methanate
  参考文献：
  名称：

  Wakeshima, Ikuko; Yamaoka, Koji; Kijima, Ichiro, Nippon Kagaku Kaishi/Journal of the Chemical Society of Japan

  摘要：

  DOI：

文献信息

• Reactivity of mixed-metal BaCu and BaY β-diketonatoalkoxides with lewis bases: Molecular structures of [Ba2Cu(μ3,η2-OCHMeCH2NMe2)2(μ,η2-thd)2(η2-thd)2(PriOH2], [Cu3(μ3-OBut)2(μ-OBut)(η2-thd)3] and [Ba(η2-thd)2(TMEDA)2]
  作者：Florence Labrize、Liliane G. Hubert-Pfalzgraf、Jacqueline Vaissermann、Carolyn B. Knobler

  DOI：10.1016/0277-5387(95)00295-4

  日期：1996.2

  -OBu t ) 2 ( μ -OBu t )thd) 3 and Ba 2 Cu( μ 3 , η 2 -OCHMeCH 2 NMe 2 ) 2 ( μ , η 2 -thd) 2 ( η 2 -thd) 2 (Pr i OH) 2 cores, respectively. Compound 4 exhibits one square planar and two square pyramidal copper centres. The CuO bond lengths range from 1.90(2) to 2.27(2) A, the order of variation being CuO(thd) μ -OR μ 3 -OR. For compound 6 , the thd, OR and Pr i OH ligands are bonded asymmetrically to

  摘要研究了Y（thd）3和Cu（thd）2与叔丁醇钡或2-二甲基氨基-2-丙醇的反应。混合金属配合物[YBa 3（OBu t）6（thd）3]（1）和[BaCu（OBu t）2（thd）2] m（3）（thdH = 2,2,6,6-四甲基庚烷-3，5-二酮）在己烷中分离。3在Et 2 O或THF中的溶解分别提供[Cu 3（OBu t）6（thd）3]（4）和[Cu（thd）2（OBu t）2（THF）2]（5）。 [Ba（thd）2（TMEDA）2]（2）在N'，N'-四亚甲基二胺的存在下获得。将1溶解在THF中，得到THF加成物（1a），通过在190℃/ 10 -3 Torr下升华得到1。相比之下，氨基醇钡和Y（thd）3在己烷中的反应直接进行到均金属化合物的形成，而对于Cu（thd）2，则通过从Pr i OH结晶获得了混合金属化合物Ba 2 Cu [OCHMeCH 2 NMe 2] 2（thd）4（Pr
• Developments of low cost coated conductors by multi-stage CVD process
  作者：N. Kashima、T. Watanabe、M. Mori、N. Suda、S. Nagaya、S. Miyata、A. Ibi、Y. Yamada、T. Izumi、Y. Shiohara

  DOI：10.1016/j.physc.2007.01.038

  日期：2007.10

  A low cost and a high-speed production process must be required for a realization of a YBCO coated conductor, especially in the electric power field applications. A multi-stage CVD is one of the most promising processes for manufacturing a coated conductor with a low cost and a high-speed production. Recent progress in developments of long YBCO coated conductors by multi-stage MO-CVD process and their properties would be described. The 203-m-long IBAD substrate (PLD-CeO2/IBAD-GZO/HastelloyC) was used for preparing the long YBCO tape. The tape traveling speed at the each passing was 50 m/h and number of passing was 14 times. We applied a 12-stage CVD hot-wall chamber system for preparing YBCO layer. As a result, the end-to-end I, of 92.8 A (77 K self-field, I mu V/cm criteria) was obtained. The 1,(A) x L(m) value corresponded to 18.8 kAm. The n-value of the tape remained 15.5. Then we measured the 1, distribution for longitudinal direction at 0.5 m intervals. The obtained data showed us that the average I, was roughly 140-150 A, however, we confirmed some low I, regions, which is about 65-100 A. The origin of the low I, regions was summarized. Concerning a high performance YBCO development, we achieved I-c of 294 A/cm by introducing a multi-temperature and composition control process. (C) 2007 Elsevier B.V. All rights reserved.
• 10.1016/s0921-4534(02)02136-6
  作者：Endo、Badica、Itoh

  DOI：10.1016/s0921-4534(02)02136-6

  日期：——
• Precisely determined temperature window size for the growth of high quality c-axis oriented YBCO films by photo-assisted MOCVD
  作者：Guoxing Li、Xiujun Fang、Lei Zhao、Shanwen Li、Zhongmin Gao、Wancheng Li、Jingzhi Yin、Baolin Zhang、Guotong Du、Penchu Chou、Lin He、Chinping Chen

  DOI：10.1016/j.physc.2008.06.005

  日期：2008.10

  It is well-known that there is a relatively small temperature window for the growth of epitaxial and c-axis oriented YBCO thin films by various methods. In this study, this window was more precisely examined for YBCO film growths by photo-assisted MOCVD. At specified total reactor pressure of 4.6 torr, and specified respective partial pressures for the oxidizing agents, O-2 and N2O at 1.7 torr and 1.1 torr, the film growths were tested at several substrate temperature (T-s) points from 780 degrees C to 864 degrees C. The film growth time for each test was 3 min. As to compositional purity, purity in c-axis orientation, and crystal structural quality of these tested films by using photo-assisted MOCVD technique, it was found that for the growth of purely c-axis oriented YBCO thin films with high crystalline quality, the appropriate growth temperature range (or "T-s, window") was from about 800 degrees C to 830 degrees C, at relevant pressures as specified above. T-c and J(c) of a typical YBCO film sample grown within this "T-s, window", i.e., 810 degrees C, were found as 90 K and 1.32 MA/cm(2) (77 K, 0 Oe) respectively by magnetization measurements. It is noticeable that this film, and other purely c-axis oriented YBCO films are all single-crystal like and dense, with no SEM visible grain boundary or void. The causes of precipitates found on top surface of these c-axis oriented YBCO films are also discussed. (C) 2008 Elsevier B.V. All rights reserved.
• High-current Y–Ba–Cu–O superconducting films by metal organic chemical vapor deposition on flexible metal substrates
  作者：V Selvamanickam、G.B Galinski、G Carota、J DeFrank、C Trautwein、P Haldar、U Balachandran、M Chudzik、J.Y Coulter、P.N Arendt、J.R Groves、R.F DePaula、B.E Newnam、D.E Peterson

  DOI：10.1016/s0921-4534(00)00231-8

  日期：2000.5

  A metal organic chemical vapor deposition (MOCVD) method has been developed to achieve high currents in Y-Ba-Cu-O (YBCO) superconducting films deposited on biaxially textured buffer layers on polycrystalline (untextured) flexible metal substrates. Optimization of the MOCVD process parameters has yielded critical currents (I-c) greater than 50 A and critical current densities (J(c)) higher than 1 MA/cm(2) at 77 K in self-field conditions. High values of critical currents were found to be maintained also in the presence of a magnetic field. At 75 K, with the magnetic field perpendicular to the c-axis (B perpendicular to c), J(c) values of 570,000 A/cm(2) (I-c = 20 A) and 240,000 A/cm(2) (I-c = 8.5 A) were achieved in fields of 1 and 5 T respectively. With the magnetic field parallel to the c-axis (B parallel to c), J(c) values of 215,000 A/cm(2) (I-c = 7.6 A) and 100,000 A/cm(2) (I-c = 3.6 A) were achieved in fields of 1 and 2.5 T respectively. At 64 K, the J(c) values were 1.2 MA/cm(2) (I-c = 43 A) and 770,000 A/cm(2) (I-c = 27 A) at 2 and 5 T respectively in the B perpendicular to c orientation. In the B parallel to c orientation, the J(c) values were 680,000 A/cm(2) (I-c = 23.7 A), 520,000 A/cm(2) (I-c = 18.2 A) and 300,000 A/cm(2) (I-c = 10.6 A) at 1, 2, and 5 T respectively. (C) 2000 Elsevier Science B.V. All rights reserved.