tetramethylammonium malonate

• 分子结构分类: 有机化合物 - 有机酸及其衍生物 - 羧酸及其衍生物
• 英文名称: tetramethylammonium malonate
• 英文别名: Propanedioate;tetramethylazanium；propanedioate;tetramethylazanium
• 化学式: C₃H₂O₄*2C₄H₁₂N
• 分子量: 250.338
• InChiKey: ITUDJUAOCANWPE-UHFFFAOYSA-L

计算性质

• 辛醇/水分配系数(LogP)：
  -2.8
• 重原子数：
  12
• 可旋转键数：
  0
• 环数：
  0.0
• sp3杂化的碳原子比例：
  0.71
• 拓扑面积：
  80.3
• 氢给体数：
  0
• 氢受体数：
  4

反应信息

• 作为反应物：
  描述：

  tetramethylammonium malonate 、 [Mn(CO)5(THF)][BF4] 以 四氢呋喃 为溶剂， 生成 [Me4N][Mn(CO)4(malonate)]
  参考文献：
  名称：

  Therapeutic delivery of carbon monoxide

  摘要：

  将含有CO配体的锰配合物、额外卤素、一齿或双齿配体的化合物、药物组合物和方法，用于将一氧化碳治疗性地输送给人类和其他哺乳动物，其中额外的配体不在相对位置上占据反位。

  公开号：

  US20100105770A1
• 作为产物：
  描述：

  丙二酸 、 四甲基氢氧化铵 以 水 为溶剂， 以90%的产率得到tetramethylammonium malonate
  参考文献：
  名称：

  铜催化胺化中离子有机碱反应能力的新见解

  摘要：

  通过有机离子碱TBPM促进了室温亚摩尔％的Ullmann胺化反应（14个实例）。此外，研究了铵和phospho基有机离子碱在更高温度下的稳定性和应用，从而导致了一种用于活化结构复杂胺的新方案。

  DOI：

  10.1002/ejoc.201900109

文献信息

• Cleaning agent for semiconductor device and method for manufacturing semiconductor device
  申请人：MITSUBISHI GAS CHEMICAL COMPANY, INC.

  公开号：EP0662705A2

  公开（公告）日：1995-07-12

  There are disclosed a method of manufacturing a semiconductor device by forming a mask with a photoresist on a conductive layer formed on a semiconductor substrate and then forming a wiring structure by dryetching which method comprises a cleaning step of peeling a protecting deposition film formed on side walls of the conductive layer and the photoresist by using a cleaning agent for a semiconductor device comprising an aqueous solution containing a specific quaternary ammonium salt and a fluoro-compound; and a cleaning agent for a semiconductor device which comprises a specific quaternary ammonium salt and a fluoro-compound, and optionally an organic solvent selected from the group consisting of amides, lactones, nitriles, alcohols and esters. The use of the above cleaning agent in the method of manufacturing a semiconductor device can peel out the protecting deposition film with extreme certainty, whereby the surface of the conductive layer is decontaminated to high cleanness and corrosion problem is eliminated.

  本发明公开了一种通过在半导体衬底上形成的导电层上用光致抗蚀剂形成掩膜，然后通过干蚀刻形成布线结构来制造半导体器件的方法，该方法包括一个清洁步骤，即使用一种半导体器件用清洁剂剥离在导电层和光致抗蚀剂侧壁上形成的保护沉积膜，该清洁剂包括一种含有特定季铵盐和氟化合物的水溶液；和一种用于半导体器件的清洗剂，该清洗剂包括一种特定的季铵盐和一种氟化合物，以及一种可选的有机溶剂，该有机溶剂选自由酰胺类、内酯类、腈类、醇类和酯类组成的组。在半导体设备的制造方法中使用上述清洁剂，可以非常准确地剥离保护沉积膜，从而使导电层表面得到高度清洁的净化，消除腐蚀问题。
• Cleaning liquid for producing semiconductor device and process for producing semiconductor device using same
  申请人：MITSUBISHI GAS CHEMICAL COMPANY, INC.

  公开号：EP0827188A2

  公开（公告）日：1998-03-04

  There is disclosed a cleaning liquid for producing a semiconductor device which comprises (A) fluorine-containing compound; (B) water-soluble or water-miscible organic solvent; and (C) inorganic acid and/or organic acid, optionally, further comprises (D) quaternary ammonium salt or (D') a specific organic carboxylic acid ammonium salt and/or an organic carboxylic acid amine salt; as well as a process for producing a semiconductor device by forming a resist pattern on a substrate equipped on the surface with an insulating film layer or a metallic electroconductive layer, forming a via hole or electric wiring by dry etching, removing the resist pattern by ashing treatment with oxygen plasma; and effecting an cleaning treatment with the above cleaning liquid. The above cleaning liquid and production process can readily remove the deposit polymer formed in the case of dry etching without impairing metallic film and insulating film.

  本发明公开了一种用于生产半导体器件的清洗液，其包括(A)含氟化合物；(B)水溶性或水混溶性有机溶剂；以及(C)无机酸和/或有机酸，可选地，还包括(D)季铵盐或(D')特定有机羧酸铵盐和/或有机羧酸胺盐；以及一种半导体器件的生产工艺，在表面装有绝缘膜层或金属导电层的基片上形成抗蚀图案，通过干法蚀刻形成通孔或电线，通过氧等离子体灰化处理去除抗蚀图案，并用上述清洗液进行清洗处理。上述清洗液和生产工艺可轻松去除干法蚀刻时形成的沉积聚合物，而不会损害金属膜和绝缘膜。
• Silicon-containing film-forming composition, silicon-containing film, silicon-containing film-bearing substrate, and patterning method
  申请人：Shinetsu Chemical Co., Ltd.

  公开号：EP1845132A2

  公开（公告）日：2007-10-17

  A silicon-containing film is formed from a heat curable composition comprising (A) a silicon-containing compound obtained by effecting hydrolytic condensation of a hydrolyzable silicon compound in the presence of an acid catalyst, and substantially removing the acid catalyst from the reaction mixture, (B) a hydroxide or organic acid salt of lithium, sodium, potassium, rubidium or cesium, or a sulfonium, iodonium or ammonium compound, (C) an organic acid, and (D) an organic solvent. The silicon-containing film allows an overlying photoresist film to be patterned effectively. The composition is effective in minimizing the occurrence of pattern defects after lithography and is shelf stable.

  含硅薄膜由一种热固化组合物形成，该组合物包括：(A) 一种含硅化合物，该化合物是通过在酸催化剂存在下使一种可水解的硅化合物发生水解缩合，并从反应混合物中基本除去酸催化剂而获得；(B) 锂、钠、钾、铷或铯的氢氧化物或有机酸盐，或一种锍、碘或铵化合物；(C) 一种有机酸；以及 (D) 一种有机溶剂。含硅薄膜可以有效地将上覆的光刻胶薄膜图案化。该组合物能有效地减少光刻后图案缺陷的出现，并具有货架稳定性。
• Stabilized carbanions as trimerization catalysts
  申请人：Air Products and Chemicals, Inc.

  公开号：EP1878493A1

  公开（公告）日：2008-01-16

  The present invention provides trimerization catalyst compositions having at least one carbanion compound and methods to produce a polyisocyanurate/polyurethane foam using such trimerization catalyst compositions.

  本发明提供了具有至少一种碳酰化合物的三聚催化剂组合物，以及使用此类三聚催化剂组合物生产聚异氰酸酯/聚氨酯泡沫的方法。
• Metal oxide-containing film-forming composition, metal oxide-containing film, metal oxide-containing film-bearing substrate, and patterning method
  申请人：Shin-Etsu Chemical Co., Ltd.

  公开号：EP2063319A1

  公开（公告）日：2009-05-27

  A metal oxide-containing film is formed from a heat curable composition comprising (A) a metal oxide-containing compound obtained through hydrolytic condensation between a hydrolyzable silicon compound and a hydrolyzable metal compound, (B) a hydroxide or organic acid salt of Li, Na, K, Rb or Cs, or a sulfonium, iodonium or ammonium compound, (C) an organic acid, and (D) an organic solvent. The metal oxide-containing film ensures effective pattern formation.

  一种含金属氧化物的薄膜由一种热固化组合物形成，该组合物包括：(A) 通过可水解硅化合物和可水解金属化合物之间的水解缩合获得的含金属氧化物化合物；(B) Li、Na、K、Rb 或 Cs 的氢氧化物或有机酸盐，或锍、碘或铵化合物；(C) 有机酸；以及 (D) 有机溶剂。含金属氧化物的薄膜可确保有效的图案形成。