acetic acid tert-butoxymethyl ester

• 分子结构分类: 有机化合物 - 有机酸及其衍生物 - 羧酸及其衍生物
• 英文名称: acetic acid tert-butoxymethyl ester
• 英文别名: Essigsaeure-tert-butoxymethylester；(2-Methylpropan-2-yl)oxymethyl acetate
• 化学式: C₇H₁₄O₃
• 分子量: 146.186
• InChiKey: MFEXBKQXERXWJZ-UHFFFAOYSA-N

计算性质

• 辛醇/水分配系数(LogP)：
  1
• 重原子数：
  10
• 可旋转键数：
  4
• 环数：
  0.0
• sp3杂化的碳原子比例：
  0.86
• 拓扑面积：
  35.5
• 氢给体数：
  0
• 氢受体数：
  3

反应信息

• 作为反应物：
  描述：

  1,4-二氧六环 、 盐酸 、 acetic acid tert-butoxymethyl ester 、 水 生成 聚合甲醛 、 溶剂黄146 、 异丁烯
  参考文献：
  名称：

  Leimu; Lehtinen, Suomen Kemistilehti B, 1950, vol. 23, p. 24

  摘要：

  DOI：
• 作为产物：
  描述：

  乙酸氯甲酯 、 sodium t-butanolate 在 乙醚 作用下， 生成 acetic acid tert-butoxymethyl ester
  参考文献：
  名称：

  Leimu; Lehtinen, Suomen Kemistilehti B, 1950, vol. 23, p. 24

  摘要：

  DOI：

文献信息

• SALT, PHOTORESIST COMPOSITION AND METHOD FOR PRODUCING PHOTORESIST PATTERN
  申请人：MASUYAMA Tatsuro

  公开号：US20120315580A1

  公开（公告）日：2012-12-13

  A salt represented by formula (I): wherein Q 1 and Q 2 each independently represent a fluorine atom or a C1-C6 perfluoroalkyl group, A 1 represents a C1-C30 monovalent organic group, X 1 represents a C1-C10 aliphatic hydrocarbon group where a hydrogen atom may be replaced by a hydroxy group, m 1 and m 2 independently each represent an integer of 1 to 4, and Z + represents an organic cation.

  一种由化学式(I)表示的盐：其中Q1和Q2分别独立表示氟原子或C1-C6全氟烷基团，A1表示C1-C30单价有机基团，X1表示C1-C10脂肪烃基团，其中氢原子可能被羟基取代，m1和m2分别独立表示1到4的整数，Z+表示有机阳离子。
• 2-5A ANALOGS AND THEIR METHODS OF USE
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  Disclosed herein are compounds that activate RNaseL, methods of synthesizing compounds that activate RNaseL and the use of compounds that activate RNaseL for treating and/or ameliorating a disease or a condition, such as a viral infection, a bacterial infection, cancer and/or parasitic disease.

  本文披露了激活RNaseL的化合物，合成激活RNaseL的化合物的方法，以及利用激活RNaseL的化合物治疗和/或改善疾病或状况的用途，例如病毒感染、细菌感染、癌症和/或寄生虫病。
• RESIST POLYMER, RESIST COMPOSITION, PROCESS FOR PATTERN FORMATION, AND STARTING COMPOUNDS FOR PRODUCTION OF THE RESIST POLYMER
  申请人：Momose Hikaru

  公开号：US20090198065A1

  公开（公告）日：2009-08-06

  To provide a resist polymer comprising, as a structural unit, an acid-decomposable unit having a structure represented by formula (1) or (2) which exhibits a small line edge roughness and produces little defects in DUV excimer laser lithography or the like. In formulas (1) and (2), n represents an integer of 2 to 24; J represents a single bond or a divalent hydrocarbon group which may have a substituent/heteroatom when n=2, or represents an n-valent hydrocarbon group which may have a substituent/heteroatom when n≧3; E represents a residue of a polymerization terminator, a chain transfer agent or a polymerization initiator; K 1 and K 2 each represent at least one selected from alkylene, cycloalkylene, oxyalkylene, arylene, a divalent thiazoline ring, a divalent oxazoline ring and a divalent imidazoline ring; L 1 and L 2 each represent at least one selected from —C(O)O—, —C(O)— and —OC(O)—; M 1 , M 2 and M 3 each represent at least one selected from alkylene, cycloalkylene, oxyalkylene and arylene; Y, Y 1 and Y 2 each represent an acid-decomposable linkage; k1, k2, l1, l2, m1, m2, and m3 each represent 0 or 1; and R 1 represents H or a methyl group.

  提供一种抗蚀聚合物，其由一个具有结构式（1）或（2）所表示的酸分解单元作为结构单元，能够在DUV准分子激光微影或类似工艺中表现出小的线边粗糙度并产生少量缺陷。在式（1）和（2）中，n表示2至24的整数；J表示单键或二价碳氢基团，当n=2时可以具有取代基/杂原子，或者当n≥3时可以表示n价碳氢基团，可以具有取代基/杂原子；E表示聚合终止剂、链转移剂或聚合引发剂的残基；K1和K2分别表示至少选择自烷基、环烷基、氧烷基、芳烃、二价噻唑环、二价噁唑环和二价咪唑环中的至少一种；L1和L2分别表示至少选择自—C（O）O—、—C（O）—和—OC（O）—中的至少一种；M1、M2和M3分别表示至少选择自烷基、环烷基、氧烷基和芳烃中的至少一种；Y、Y1和Y2分别表示酸分解键；k1、k2、l1、l2、m1、m2和m3分别表示0或1；R1表示H或甲基基团。
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  公开号：US20070027271A1

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• Resist polymer, resist composition, process for pattern formation, and starting compounds for production of the resist polymer
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  公开（公告）日：2007-08-16

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