tetramethylammonium butanoate

• 分子结构分类: 有机化合物 - 脂质和类脂质分子 - 脂肪酰基
• 英文名称: tetramethylammonium butanoate
• 英文别名: tetramethylammonium butyrate；Tetramethylammoniumbutyrat；Butanoate;tetramethylazanium
• 化学式: C₄H₇O₂*C₄H₁₂N
• 分子量: 161.244
• InChiKey: OYGSFKZFXQKZDS-UHFFFAOYSA-M

计算性质

• 辛醇/水分配系数(LogP)：
  -0.14
• 重原子数：
  11
• 可旋转键数：
  1
• 环数：
  0.0
• sp3杂化的碳原子比例：
  0.88
• 拓扑面积：
  40.1
• 氢给体数：
  0
• 氢受体数：
  2

反应信息

• 作为产物：
  描述：

  sodium butyrate 、 四甲基氯化铵 以 水 为溶剂， 以96%的产率得到tetramethylammonium butanoate
  参考文献：
  名称：

  마이크로리엑터를 사용한 카르복실산 음이온을 갖는 이온성 액체의 제조방법

  摘要：

  This invention relates to a method for producing an ionic liquid containing carboxylic acid anions using a microreactor. More specifically, the invention relates to a method for efficiently producing an ionic liquid with carboxylic acid anions, as shown in Figure 1, by substituting sodium butanoate, sodium 2-ethylhexanoate, and sodium octanoate with cations such as 1-alkyl-3-methylimidazolium, 1,1-alkylmethylpyrrolidinium, 1,2-dimethyl-3-alkylimidazolium, 1-alkyl-3-methylpyridinium, and tetramethylammonium through substitution reactions. The ionic liquid produced according to this invention is of high purity, containing residual halides of less than 10 ppm, and has high electrical conductivity, making it suitable for use as an electrolyte and in capacitors.

  公开号：

  KR20160026982A
• 作为试剂：
  描述：

  N-butylcarbamoyl-β-alanine 在 N,N'-二环己基碳二亚胺 、 tetramethylammonium butanoate 作用下， 以 1,4-二氧六环 、 N,N-二甲基甲酰胺 为溶剂， 生成
  参考文献：
  名称：

  氢键缔合引起的邻近效应。详细的动力学研究

  摘要：

  已在25°C的DMF中研究了位于亲电子中心附近的尿素结合位点对羧酸盐的邻近效应，例如丁酸根离子与化合物1的反应。在低丁酸酯浓度下观察到的最大催化作用约为。11.通过分子内过程的有效摩尔数测量的邻近效应为约。3 mol dm -1。还研究了添加N，N'-二甲基脲对丁酸根离子与乙酸对硝基苯酯反应的影响，这是分子间模型反应。

  DOI：

  10.1016/0040-4039(95)02083-7

文献信息

• Process for the preparation of carboxylic benzyl esters
  申请人：——

  公开号：US20030233008A1

  公开（公告）日：2003-12-18

  Carboxylic benzyl esters can be prepared by reacting benzyl chloride with carboxylic acids in the presence of one or more quaternary ammonium carboxylates as catalyst.

  羧基苄酯可以通过在一个或多个季铵羧酸盐存在的催化剂下，将苄基氯与羧酸反应制备而成。
• Verfahren zur Herstellung von Carbonsäurebenzylestern
  申请人：Bayer Aktiengesellschaft

  公开号：EP1371627A1

  公开（公告）日：2003-12-17

  Carbonsäurebenzylester können durch Umsetzung von Benzylchlorid mit Carbonsäuren in Gegenwart eines oder mehrerer quartären Ammoniumcarboxylate als Katalysator hergestellt werden.

  Carbonsäure苯甲酯可以通过在一个或多个季铵羧酸盐存在下，将苯甲酰氯与羧酸反应制备而成。
• METHOD FOR PREPARING IONIC LIQUID HAVING CARBOXYLIC ACID ANION USING MICROREACTOR
  申请人：CHEMTECH RESEARCH INCORPORATION

  公开号：US20160254098A1

  公开（公告）日：2016-09-01

  The present invention relates to a method for preparing an ionic liquid having a carboxylic acid anion using a microreactor. More specifically, the present invention relates to a method for preparing, with high efficiency, an ionic liquid having a carboxylic acid anion as shown in FIG. 1, by having sodium butanoate, sodium 2-ethylhexanoate, or sodium octanoate undergo a substitution reaction with 1-alkyl-3-methylimidazolium, 1,1-alkylmethylpyrrolidinium, 1,2-dimethyl-3-alkylimidazolium, 1-alkyl-3-methylpyridinium, or tetramethylammonium, each of which being a cation. The ionic liquid prepared according to the present invention has high purity, containing residual halide at less than 10 ppm, and has high electrical conductivity, and therefore is capable of being used as an electrolyte or for a condenser.

  本发明涉及一种使用微反应器制备具有羧酸阴离子的离子液体的方法。更具体地说，本发明涉及通过使丁酸钠、2-乙基己酸钠或辛酸钠与1-烷基-3-甲基咪唑、1,1-烷基甲基吡咯烷、1,2-二甲基-3-烷基咪唑、1-烷基-3-甲基吡啶或四甲基铵发生取代反应来高效制备具有羧酸阴离子的离子液体，如图1所示。根据本发明制备的离子液体具有高纯度，在10 ppm以下含有残留卤化物，并具有高电导率，因此可用作电解质或电容器。
• Preparing glycol monoesters
  申请人：EXXON RESEARCH AND ENGINEERING COMPANY

  公开号：EP0178913A2

  公开（公告）日：1986-04-23

  An improved process for preparing glycol monoesters is provided which comprises reacting an alkylene oxide with a sterically hindered carboxylic acid in the presence of an amine catalyst.

  本发明提供了一种改进的乙二醇单酯制备工艺，该工艺包括在胺催化剂存在下，使环氧烷与立体受阻的羧酸发生反应。
• Cleaning agent for semiconductor device and method for manufacturing semiconductor device
  申请人：MITSUBISHI GAS CHEMICAL COMPANY, INC.

  公开号：EP0662705A2

  公开（公告）日：1995-07-12

  There are disclosed a method of manufacturing a semiconductor device by forming a mask with a photoresist on a conductive layer formed on a semiconductor substrate and then forming a wiring structure by dryetching which method comprises a cleaning step of peeling a protecting deposition film formed on side walls of the conductive layer and the photoresist by using a cleaning agent for a semiconductor device comprising an aqueous solution containing a specific quaternary ammonium salt and a fluoro-compound; and a cleaning agent for a semiconductor device which comprises a specific quaternary ammonium salt and a fluoro-compound, and optionally an organic solvent selected from the group consisting of amides, lactones, nitriles, alcohols and esters. The use of the above cleaning agent in the method of manufacturing a semiconductor device can peel out the protecting deposition film with extreme certainty, whereby the surface of the conductive layer is decontaminated to high cleanness and corrosion problem is eliminated.

  本发明公开了一种通过在半导体衬底上形成的导电层上用光致抗蚀剂形成掩膜，然后通过干蚀刻形成布线结构来制造半导体器件的方法，该方法包括一个清洁步骤，即使用一种半导体器件用清洁剂剥离在导电层和光致抗蚀剂侧壁上形成的保护沉积膜，该清洁剂包括一种含有特定季铵盐和氟化合物的水溶液；和一种用于半导体器件的清洗剂，该清洗剂包括一种特定的季铵盐和一种氟化合物，以及一种可选的有机溶剂，该有机溶剂选自由酰胺类、内酯类、腈类、醇类和酯类组成的组。在半导体设备的制造方法中使用上述清洁剂，可以非常准确地剥离保护沉积膜，从而使导电层表面得到高度清洁的净化，消除腐蚀问题。