4-ethyl-1,2-cyclohexanediol

• 分子结构分类: 有机化合物 - 有机氧化合物
• 英文名称: 4-ethyl-1,2-cyclohexanediol
• 英文别名: 4-Ethylcyclohexane-1,2-diol
• 化学式: C₈H₁₆O₂
• 分子量: 144.214
• InChiKey: DUPUTQKALWBSNT-UHFFFAOYSA-N

计算性质

• 辛醇/水分配系数(LogP)：
  1.2
• 重原子数：
  10
• 可旋转键数：
  1
• 环数：
  1.0
• sp3杂化的碳原子比例：
  1.0
• 拓扑面积：
  40.5
• 氢给体数：
  2
• 氢受体数：
  2

反应信息

• 作为产物：
  描述：

  4-乙基苯磷二酚 在 氢气 作用下， 以 正十六烷 为溶剂， 300.0 ℃ 、4.0 MPa 条件下， 反应 1.0h， 以55%的产率得到4-ethyl-1,2-cyclohexanediol
  参考文献：
  名称：

  模型和木质素衍生的酚类化合物的选择性镍催化转化为基于环己酮的聚合物结构单元

  摘要：

  木质素的增价对于未来木质纤维素生物精炼厂的经济性至关重要。木质素通过以下四个步骤转化为新型的聚合物结构单元：针叶木的催化加氢处理形成4-烷基愈创木酚，将其转化为4-烷基环己醇，然后脱氢形成环己酮，以及Baeyer-Villiger氧化生成己内酯。烷基化环己醇的形成是该系列中最困难的步骤之一。在CeO 2或ZrO 2上存在镍的液相过程本文证明了催化剂可产生最高的环己醇收率。与4-烷基愈创木酚的催化反应遵循两条平行的途径，且速率相近：1）环加氢形成相应的烷基化2-甲氧基环己醇，以及2）脱甲氧基化形成4-烷基苯酚。尽管随后的苯酚向环己醇的转化速度很快，但从2-甲氧基环己醇中除去甲氧基的速率受到限制。总的来说，这最后一个反应是限速步骤，需要足够的温度（> 250°C）才能克服能垒。Ni / CeO 2的底物反应性（相对于烷基链的类型）和反应速率的催化剂特性（镍负载量和镍粒度）的细节已详细报道。催化剂。最好的Ni

  DOI：

  10.1002/cssc.201403375

文献信息

• Direct organocatalytic asymmetric α-oxidation of ketones with iodosobenzene and N-sulfonyloxaziridines
  作者：Magnus Engqvist、Jesús Casas、Henrik Sundén、Ismail Ibrahem、Armando Córdova

  DOI：10.1016/j.tetlet.2005.01.167

  日期：2005.3

  amino acid-catalyzed α-oxidation of ketones with iodosobenzene and N-sulfonyloxaziridines is presented. A screen of several synthetically common oxidants revealed that iodosobenzene and N-sulfonyloxaziridines act as electrophiles in the direct organocatalytic asymmetric α-hydroxylation of ketones. The direct proline-catalyzed asymmetric α-oxidation of ketones with iodosobenzene yielded the corresponding

  提出了新颖的，直接的氨基酸催化的碘与碘代苯和N-磺酰基恶唑烷酮的酮α氧化反应。几种合成的常见氧化剂的筛选结果表明，碘代苯和N-磺酰基恶唑烷在酮的直接有机催化不对称α-羟基化反应中充当亲电试剂。用碘代苯直接脯氨酸催化的酮的不对称α-氧化反应产生了相应的α-羟基化的酮，其ee高达77％。此外，几种氨基酸衍生物催化酮与N-磺酰基氧氮丙啶的立体选择性α-氧化。例如，用N对酮进行直接二胺催化的对映选择性α-羟基化-磺酰恶唑烷以中等产率提供了相应的α-羟基化产物，ee高达63％。
• Silicon-containing film-forming composition, silicon-containing film, silicon-containing film-bearing substrate, and patterning method
  申请人：Shinetsu Chemical Co., Ltd.

  公开号：EP1845132A2

  公开（公告）日：2007-10-17

  A silicon-containing film is formed from a heat curable composition comprising (A) a silicon-containing compound obtained by effecting hydrolytic condensation of a hydrolyzable silicon compound in the presence of an acid catalyst, and substantially removing the acid catalyst from the reaction mixture, (B) a hydroxide or organic acid salt of lithium, sodium, potassium, rubidium or cesium, or a sulfonium, iodonium or ammonium compound, (C) an organic acid, and (D) an organic solvent. The silicon-containing film allows an overlying photoresist film to be patterned effectively. The composition is effective in minimizing the occurrence of pattern defects after lithography and is shelf stable.

  含硅薄膜由一种热固化组合物形成，该组合物包括：(A) 一种含硅化合物，该化合物是通过在酸催化剂存在下使一种可水解的硅化合物发生水解缩合，并从反应混合物中基本除去酸催化剂而获得；(B) 锂、钠、钾、铷或铯的氢氧化物或有机酸盐，或一种锍、碘或铵化合物；(C) 一种有机酸；以及 (D) 一种有机溶剂。含硅薄膜可以有效地将上覆的光刻胶薄膜图案化。该组合物能有效地减少光刻后图案缺陷的出现，并具有货架稳定性。
• Polyhedral oligomeric silsesquioxane image conditioning coating
  申请人：Xerox Corporation

  公开号：EP2289974A2

  公开（公告）日：2011-03-02

  A contact leveling surface for an ink jet imaging member including a coating disposed on a contact leveling substrate, wherein the coating includes a fluoroalkyl-substituted polyhedral oligomeric silsesquioxane. In embodiments, the contact leveling surface is for an ink jet imaging member that jets a phase change ink, a gel ink, a curable phase change ink, or a curable gel ink directly to a final image receiving substrate such as a direct to paper imaging device.

  一种用于喷墨成像部件的接触式匀墨表面，包括设置在接触式匀墨基底上的涂层，其中涂层包括氟烷基取代的多面体低聚硅倍半氧烷。在实施例中，接触匀染表面用于将相变墨水、凝胶墨水、可固化相变墨水或可固化凝胶墨水直接喷射到最终图像接收基底（如直接到纸成像设备）上的喷墨成像部件。
• Silicon-containing resist underlayer film-forming composition and patterning process
  申请人：Shin-Etsu Chemical Co., Ltd.

  公开号：EP2599818A1

  公开（公告）日：2013-06-05

  The present invention is a silicon-containing resist underlayer film-forming composition containing a condensation product and/or a hydrolysis condensation product of a mixture comprising: one or more kinds of a compound (A) selected from the group consisting of an organic boron compound shown by the general formula (1) and a condensation product thereof and one or more kinds of a silicon compound (B) shown by the general formula (2). Thereby, there can be provided a silicon-containing resist underlayer film-forming composition being capable of forming a pattern having a good adhesion, forming a silicon-containing film which can be used as a dry-etching mask between a photoresist film which is the upperlayer film of the silicon-containing film and an organic film which is the underlayer film thereof, and suppressing deformation of the upperlayer resist during the time of dry etching of the silicon-containing film; and a patterning process.         R1m0B(OH)m1(OR)(3-m0-m1)     (1)         R10m10R11m11R12m12Si(OR13)(4-m10-m11-m12)     (2)

  本发明是一种含硅抗蚀剂底层成膜组合物，它含有以下混合物的缩合产物和/或水解缩合产物：一种或多种选自通式（1）所示有机硼化合物及其缩合产物的化合物（A）和一种或多种通式（2）所示硅化合物（B）。因此，可以提供一种含硅抗蚀剂底层成膜组合物，该组合物能够形成具有良好附着力的图案，在作为含硅薄膜的上层薄膜的光刻胶薄膜和作为其底层薄膜的有机薄膜之间形成可用作干蚀刻掩膜的含硅薄膜，并在干蚀刻含硅薄膜时抑制上层抗蚀剂的变形；还可以提供一种图案化工艺。 R1m0B(OH)m1(OR)(3-m0-m1) (1) R10m10R11m11R12m12Si(OR13)(4-m10-m11-m12) (2)
• Composition for forming a coating type BPSG film, substrate formed a film by said composition, and patterning process using said composition
  申请人：Shin-Etsu Chemical Co., Ltd.

  公开号：EP2826826A1

  公开（公告）日：2015-01-21

  The present invention provides a composition for forming a coating type BPSG film, which comprises: one or more structures comprising a silicic acid represented by the following general formula (1) as a skeletal structure, one or more structures comprising a phosphoric acid represented by the following general formula (2) as a skeletal structure and one or more structures comprising a boric acid represented by the following general formula (3) as a skeletal structure. There can be provided a composition for forming a coating type BPSG film which is excellent in adhesiveness in fine pattern, can be easily wet etched by a peeling solution which does not cause any damage to the semiconductor apparatus substrate, the coating type organic film or the CVD film mainly comprising carbon which are necessary in the patterning process, and can suppress generation of particles by forming it in the coating process.

  本发明提供了一种用于形成涂层型 BPSG 薄膜的组合物，该组合物包括：由以下通式 (1) 所代表的硅酸作为骨架结构的一种或多种结构、由以下通式 (2) 所代表的磷酸作为骨架结构的一种或多种结构以及由以下通式 (3) 所代表的硼酸作为骨架结构的一种或多种结构。本发明可提供一种用于形成涂层型 BPSG 薄膜的组合物，该组合物在精细图案方面具有优异的粘附性，可通过剥离溶液轻松进行湿蚀刻，不会对半导体设备基板、涂层型有机薄膜或图案化过程中所需的主要由碳构成的 CVD 薄膜造成任何损害，并且通过在涂层过程中形成该组合物，可抑制颗粒的生成。