METAL ALKOXIDE COMPOUND, THIN-FILM-FORMING MATERIAL, METHOD FOR PRODUCING THIN FILM, AND ALCOHOL COMPOUND
申请人:ADEKA CORPORATION
公开号:US20150175642A1
公开(公告)日:2015-06-25
Disclosed is a metal alkoxide compound having physical properties suitable for a material for forming thin films by CVD, and particularly, a metal alkoxide compound having physical properties suitable for a material for forming metallic-copper thin films. A metal alkoxide compound is represented by general formula (I). A thin-film-forming material including the metal alkoxide compound is described as well. (In the formula, R
1
represents a methyl group or an ethyl group, R
2
represents a hydrogen atom or a methyl group, R
3
represents a C
1-3
linear or branched alkyl group, M represents a metal atom or a silicon atom, and n represents the valence of the metal atom or silicon atom.
Synthesis And Characterization Of First Row Transition Metal Complexes Containing a-Imino Alkoxides As Precursors For Deposition Of Metal Films
申请人:WAYNE STATE UNIVERSITY
公开号:US20140227444A1
公开(公告)日:2014-08-14
A compound that is useful for forming a metal by reaction with a reducing agent is described by formula (I):
wherein
M is a metal selected from Groups 2 through 12 of the Periodic Table; and
R
1
, R
2
, R
3
, and R
4
are each independently H or C
1
-C
8
alkyl.
Synthesis and characterization of first row transition metal complexes containing α-imino alkoxides as precursors for deposition of metal films
申请人:Wayne State University
公开号:US09758866B2
公开(公告)日:2017-09-12
A compound that is useful for forming a metal by reaction with a reducing agent is described by formula (I):
wherein
M is a metal selected from Groups 2 through 12 of the Periodic Table; and
R1, R2, R3, and R4 are each independently H or C1-C8 alkyl.