The purpose of the present invention is to provide a means to sufficiently remove impurities remaining on the surface of a polishing object after CMP.
The polishing composition of the present invention is a polishing composition which is used after polishing has been performed by using a polishing composition (A) including abrasive grains or an organic compound (A), and is characterized by including an organic compound (B) which includes at least one atom selected from the group consisting of a fluorine atom, an oxygen atom, a nitrogen atom, and a chlorine atom and has a molecular weight of 100 or more, a pH adjusting agent, and 0 to 1% by mass of abrasive grains.
本发明的目的是提供一种在
CMP 之后充分去除抛光对象表面残留杂质的方法。
本发明的抛光组合物是一种抛光组合物,在使用包括磨粒或有机化合物(A)的抛光组合物(A)进行抛光后使用,其特征在于包括有机化合物(B),该有机化合物(B)包括至少一个选自由
氟原子、氧原子、氮原子和
氯原子组成的组中的原子,且分子量在 100 或以上;pH 值调节剂;以及 0 至 1%(质量百分比)的磨粒。