[EN] MIXED ABRASIVE TUNGSTEN CMP COMPOSITION<br/>[FR] COMPOSITION DE POLISSAGE CHIMICO-MECANIQUE (CMP) DE TUNGSTÈNE CONSTITUÉE D'ABRASIFS MÉLANGÉS
申请人:CABOT MICROELECTRONICS CORP
公开号:WO2015148294A1
公开(公告)日:2015-10-01
A chemical mechanical polishing composition includes a water based liquid carrier and first and second silica abrasives dispersed in the liquid carrier. The first silica abrasive is a colloidal silica abrasive having a permanent positive charge of at least 10 mV. The second silica abrasive has a neutral charge or a non-permanent positive charge. A method for chemical mechanical polishing a substrate including a tungsten layer includes contacting the substrate with the above described polishing composition, moving the polishing composition relative to the substrate, and abrading the substrate to remove a portion of the tungsten from the substrate and thereby polish the substrate.