The present invention relates to an organic semiconductor layer and an organic electronic device comprising the same, wherein the organic electronic device comprises an anode, a cathode and at least one organic semiconductor layer, wherein the at least one organic semiconductor layer comprises: - a metal dopant, and - a compound represented by the following formula (I):
本发明涉及一种有机半导体层和包括该有机半导体层的有机电子器件,其中该有机电子器件包括阳极、阴极和至少一个有机半导体层,所述至少一个有机半导体层包括:-
金属掺杂剂,和- 由以下式子(I)表示的化合物: