SUPPRESSING SIN REMOVAL RATES AND REDUCING OXIDE TRENCH DISHING FOR SHALLOW TRENCH ISOLATION (STI) PROCESS
申请人:Versum Materials US, LLC
公开号:EP3647384A1
公开(公告)日:2020-05-06
Present invention provides Chemical Mechanical Planarization Polishing (CMP) compositions for Shallow Trench Isolation (STI) applications. The CMP compositions contain ceria coated inorganic oxide particles as abrasives, such as ceria-coated silica particles; chemical additive selected from the group consisting of an organic acetylene molecule containing an acetylene bond and at least two or multi ethoxylate functional groups with terminal hydroxyl groups, an organic molecule with at least two or multi hydroxyl functional groups in the same molecule, and combinations thereof; water soluble solvent; and optionally biocide and pH adjuster; wherein the composition has a pH of 2 to 12, preferably 3 to 10, and more preferably 4 to 9.
本发明提供了用于浅沟隔离(STI)的化学机械平面抛光(CMP)组合物。CMP 组合物包含作为磨料的铈包覆无机氧化物颗粒,例如铈包覆二氧化硅颗粒;化学添加剂,选自以下组别:含有乙炔键和至少两个或多个带有末端羟基的乙氧基官能团的有机乙炔分子、在同一分子中含有至少两个或多个羟基官能团的有机分子及其组合;水溶性溶剂;以及可选的杀菌剂和 pH 值调节剂;其中组合物的 pH 值为 2 至 12,优选 3 至 10,更优选 4 至 9。