申请人:FUJIMI INCORPORATED
公开号:EP1085067A1
公开(公告)日:2001-03-21
Object: To provide a polishing composition which is capable of polishing a tantalum-containing compound at a high stock removal rate and whereby the copper surface after polishing is scarcely corroded, and to provide a polishing process where dishing can be minimized. Means to accomplish the object: A polishing composition comprising an abrasive, oxalic acid, an ethylenediamine derivative, a benzotriazole derivative and water and not containing an oxidizing agent, and a polishing composition comprising an abrasive, oxalic acid, an ethylenediamine derivative, a benzotriazole derivative, water and hydrogen peroxide.
Further, a polishing process for forming a copper printed wiring, which is a polishing process for a semiconductor device and which comprises a first polishing step wherein polishing is completed immediately before reaching a barrier layer while a copper layer still slightly remains, and second and third polishing steps wherein the remaining copper layer and the barrier layer are polished, wherein in the second polishing step, a polishing composition containing hydrogen peroxide is used and all the copper layer to be removed, is removed by polishing, and then, in the third polishing step, a polishing composition not containing hydrogen peroxide is used and all the barrier layer to be removed, is removed by polishing.
目的提供一种抛光组合物,该组合物能够以较高的去料率对含钽化合物进行抛光,抛光后的铜表面几乎不会被腐蚀,并提供一种抛光工艺,该工艺可以最大限度地减少碟形。实现目标的方法:一种由研磨剂、草酸、乙二胺衍生物、苯并三唑衍生物和水组成且不含氧化剂的抛光组合物,以及一种由研磨剂、草酸、乙二胺衍生物、苯并三唑衍生物、水和过氧化氢组成的抛光组合物。
此外,一种用于形成铜印刷线路的抛光工艺,它是一种用于半导体器件的抛光工艺,包括第一抛光步骤,其中在到达阻挡层之前立即完成抛光,而铜层仍略有残留;以及第二和第三抛光步骤,其中对残留的铜层和阻挡层进行抛光、其中,在第二抛光步骤中,使用含有过氧化氢的抛光组合物,通过抛光去除所有待去除的铜层;然后,在第三抛光步骤中,使用不含过氧化氢的抛光组合物,通过抛光去除所有待去除的阻挡层。