摩熵化学
数据库官网
小程序
打开微信扫一扫
首页 分子通 化学资讯 化学百科 反应查询 关于我们
请输入关键词

1-Methyl-1-propoxy-cyclohexane | 138710-82-4

中文名称
——
中文别名
——
英文名称
1-Methyl-1-propoxy-cyclohexane
英文别名
1-Methyl-1-propoxycyclohexane
1-Methyl-1-propoxy-cyclohexane化学式
CAS
138710-82-4
化学式
C10H20O
mdl
——
分子量
156.268
InChiKey
QKCUODPPENZIKP-UHFFFAOYSA-N
BEILSTEIN
——
EINECS
——
  • 物化性质
  • 计算性质
  • ADMET
  • 安全信息
  • SDS
  • 制备方法与用途
  • 上下游信息
  • 反应信息
  • 文献信息
  • 表征谱图
  • 同类化合物
  • 相关功能分类
  • 相关结构分类

物化性质

  • 沸点:
    179.5±8.0 °C(Predicted)
  • 密度:
    0.85±0.1 g/cm3(Predicted)

计算性质

  • 辛醇/水分配系数(LogP):
    3
  • 重原子数:
    11
  • 可旋转键数:
    3
  • 环数:
    1.0
  • sp3杂化的碳原子比例:
    1.0
  • 拓扑面积:
    9.2
  • 氢给体数:
    0
  • 氢受体数:
    1

反应信息

  • 作为产物:
    描述:
    环己酮硫酸 作用下, 反应 60.0h, 生成 1-Methyl-1-propoxy-cyclohexane
    参考文献:
    名称:
    Beger, J.; Thomas, B.; Vogel, T., Journal fur praktische Chemie (Leipzig 1954), 1991, vol. 333, # 3, p. 481 - 488
    摘要:
    DOI:
点击查看最新优质反应信息

文献信息

  • QUATERNARY AMMONIUM SALT COMPOUND, COMPOSITION FOR FORMING A RESIST UNDER LAYER FILM, AND PATTERNING PROCESS
    申请人:SHIN-ETSU CHEMICAL CO., LTD.
    公开号:US20150357204A1
    公开(公告)日:2015-12-10
    A quaternary ammonium salt compound is represented by the following formula (A-1), wherein, R 1 , R 2 , and R 3 each represent an alkyl group, an alkenyl group, an aryl group, or an aralkyl group, a part or all of hydrogen atoms in these groups may be substituted by a hydroxyl group(s), an alkoxy group(s), or a halogen atom(s), and these groups may include one or more of a carbonyl group and an ester bond; R 4 represents a single bond, an alkylene group, an alkenylene group, an arylene group, or an aralkylene group, a part or all of hydrogen atoms in these groups may be substituted by an alkoxy group(s) or a halogen atom(s), and these groups may include one or more of an ether bond, a carbonyl group, an ester bond, and an amide bond; and A − represents a non-nucleophilic counter ion.
    一个四元铵盐化合物由以下式(A-1)表示,其中,R1、R2和R3分别代表烷基、烯基、芳基或芳基烷基,这些基团中的氢原子的一部分或全部可以被羟基、烷氧基或卤原子取代,这些基团中可能包括一个或多个羰基和酯键;R4代表一个单键、烷基、烯基、芳基或芳基烷基,这些基团中的氢原子的一部分或全部可以被烷氧基或卤原子取代,这些基团中可能包括一个或多个醚键、羰基、酯键和酰胺键;A−代表一个非亲核对离子。
  • COMPOUNDS EXHIBITING THROMBOPOIETIN RECEPTOR AGONISM
    申请人:Takayama Masami
    公开号:US20090318513A1
    公开(公告)日:2009-12-24
    A compound represented by the general formula (I): wherein R 1 is a hydrogen atom, a halogen atom, or the like; R 2 , R 3 , and R 4 are each independently a hydrogen atom, a halogen atom, C1-C15 alkyl optionally substituted with one or more C1-C12 alkyloxy or the like, or the like; R 5 is a hydrogen atom or the like; R 6 and R 7 are a hydrogen atom or the like; R 8 is C1-C3 alkyl or the like; R 9 is a hydrogen atom or the like), a prodrug, a pharmaceutically acceptable salt, or solvate thereof.
    一种由通式(I)表示的化合物:其中R1是氢原子、卤素原子或类似物;R2、R3和R4各自独立地是氢原子、卤素原子、C1-C15烷基(可选地用一个或多个C1-C12烷氧基或类似物取代)或类似物;R5是氢原子或类似物;R6和R7是氢原子或类似物;R8是C1-C3烷基或类似物;R9是氢原子或类似物。该化合物为一种前药、药物可接受的盐或其溶剂。
  • Compounds exhibiting thrombopoietin receptor agonism
    申请人:Takayama Masami
    公开号:US20070043087A1
    公开(公告)日:2007-02-22
    A compound represented by the general formula (I): wherein R 1 is a hydrogen atom, a halogen atom, or the like; R 2 , R 3 , and R 4 are each independently a hydrogen atom, a halogen atom, C1-C15 alkyl optionally substituted with one or more C1-C12 alkyloxy or the like, or the like; R 5 is a hydrogen atom or the like; R 6 and R 7 are a hydrogen atom or the like; R 8 is C1-C3 alkyl or the like; R 9 is a hydrogen atom or the like), a prodrug, a pharmaceutically acceptable salt, or solvate thereof.
    化合物的一般式(I)表示的复合物,其中R1是氢原子、卤素原子或类似物;R2、R3和R4各自独立地是氢原子、卤素原子、C1-C15烷基(可选地用一个或多个C1-C12烷氧基或类似物取代)或类似物;R5是氢原子或类似物;R6和R7是氢原子或类似物;R8是C1-C3烷基或类似物;R9是氢原子或类似物。这是一个前药、药物可接受的盐或其溶剂。
  • COMPOUNDS HAVING THROMBOPOIETIN RECEPTOR AGONISM
    申请人:SHIONOGI & CO., LTD.
    公开号:EP1655291B1
    公开(公告)日:2016-08-03
  • COMPOSITION FOR FORMING RESIST UNDERLAYER FILM AND PATTERNING PROCESS USING THE SAME
    申请人:OGIHARA Tsutomu
    公开号:US20130005150A1
    公开(公告)日:2013-01-03
    The invention provides a composition for forming a silicon-containing resist underlayer film comprising: (A) a silicon-containing compound obtained by a hydrolysis-condensation reaction of a mixture containing, at least, one or more hydrolysable silicon compound shown by the following general formula (1) and one or more hydrolysable compound shown by the following general formula (2), and (B) a silicon-containing compound obtained by a hydrolysis-condensation reaction of a mixture containing, at least, one or more hydrolysable silicon compound shown by the following general formula (3) and one or more hydrolysable silicon compound shown by the following general formula (4). There can be provided a composition for forming a resist underlayer film applicable not only to a resist pattern obtained in a negative development but also to a resist pattern obtained in a conventional positive development, and a patterning process using this composition. R 1 m1 R 2 m2 R 3 m3 Si(OR) (4-m1-m2-m3) (1) U(OR 4 ) m4 (OR 5 ) m5 (2) R 6 m6 R 7 m7 R 8 m8 Si(OR 9 ) (4-m6-m7-m8) (3) Si(OR 10 ) 4 (4)
查看更多