3,4-bis-hydroxymethyl-hexane-1,6-diol | 5760-27-0

• 分子结构分类: 有机化合物 - 脂质和类脂质分子 - 脂肪酰基
• 英文名称: 3,4-bis-hydroxymethyl-hexane-1,6-diol
• 英文别名: 1,6-Dihydroxy-3,4-bis-hydroxymethyl-hexan；3,4-Bis-hydroxymethyl-hexandiol-(1,6)；1,2,3,4-Tetra-hydroxymethyl-butan；1,2,3,4-Tetramethylol-butan；3,4-Bis(hydroxymethyl)hexane-1,6-diol
• CAS: 5760-27-0
• 化学式: C₈H₁₈O₄
• 分子量: 178.229
• InChiKey: DDLJGVIHEWIBAC-UHFFFAOYSA-N

物化性质

• 熔点：
  92 °C
• 沸点：
  406.3±40.0 °C(Predicted)
• 密度：
  1.177±0.06 g/cm3(Predicted)

计算性质

• 辛醇/水分配系数(LogP)：
  -1.3
• 重原子数：
  12
• 可旋转键数：
  7
• 环数：
  0.0
• sp3杂化的碳原子比例：
  1.0
• 拓扑面积：
  80.9
• 氢给体数：
  4
• 氢受体数：
  4

反应信息

• 作为反应物：
  描述：

  3,4-bis-hydroxymethyl-hexane-1,6-diol 在 吡啶 、 sodium iodide 作用下， 以 丙酮 为溶剂， 生成 Bicyclopentyl-(1,1')-tetracarbonsaeure-(3,3,3',3')
  参考文献：
  名称：

  Buchta,E.; Greiner,K., Chemische Berichte, 1961, vol. 94, p. 1311 - 1316

  摘要：

  DOI：
• 作为产物：
  描述：

  四乙基丁烷-1,2,3,4-四羧酸酯 在 lithium aluminium tetrahydride 作用下， 以 四氢呋喃 为溶剂， 生成 3,4-bis-hydroxymethyl-hexane-1,6-diol
  参考文献：
  名称：

  Hopff,H.; Ruette,R. v., Helvetica Chimica Acta, 1966, vol. 49, p. 329 - 334

  摘要：

  DOI：

文献信息

• Composition for forming silicon-containing film, silicon-containing film-formed substrate and patterning process
  申请人：Shin-Etsu Chemical Co., Ltd.

  公开号：EP2172807A1

  公开（公告）日：2010-04-07

  There is disclosed a thermosetting composition for forming a silicon-containing film to form a silicon-containing film formed in a multilayer resist process used in lithography, including at least (A) a silicon-containing compound obtained by hydrolyzing and condensing a hydrolyzable silicon compound using an acid as a catalyst, (B) a thermal crosslinking accelerator (C) a monovalent or bivalent or more organic acid having 1 to 30 carbon atoms, (D) trivalent or more alcohol and (E) an organic solvent. There can be provided a composition for a silicon-containing film which can form a good pattern in a photoresist film, can form a silicon-containing film for an etching mask having a good dry etching resistance, can give a good storage stability and can be delaminated with a solution used in a delamination process in a multilayer resist process used for lithography, a substrate on which the silicon-containing film is formed, and further a method for forming a pattern.

  本发明公开了一种用于形成含硅薄膜的热固性组合物，该组合物用于形成在光刻中使用的多层抗蚀剂工艺中形成的含硅薄膜，至少包括(A)通过使用酸作为催化剂水解和缩合可水解硅化合物而获得的含硅化合物，(B)热交联促进剂，(C)具有 1 至 30 个碳原子的一价或二价或更多有机酸，(D)三价或更多醇，以及(E)有机溶剂。本发明可以提供一种含硅薄膜的组合物，该组合物可以在光刻胶膜中形成良好的图案，可以形成用于蚀刻掩膜的含硅薄膜，该薄膜具有良好的耐干蚀刻性，可以提供良好的储存稳定性，并且可以用用于光刻的多层抗蚀剂工艺中的分层工艺中使用的溶液进行分层，还可以提供一种在其上形成含硅薄膜的基底，以及进一步提供一种形成图案的方法。
• Composition for forming a coating type BPSG film, substrate formed a film by said composition, and patterning process using said composition
  申请人：Shin-Etsu Chemical Co., Ltd.

  公开号：EP2826826A1

  公开（公告）日：2015-01-21

  The present invention provides a composition for forming a coating type BPSG film, which comprises: one or more structures comprising a silicic acid represented by the following general formula (1) as a skeletal structure, one or more structures comprising a phosphoric acid represented by the following general formula (2) as a skeletal structure and one or more structures comprising a boric acid represented by the following general formula (3) as a skeletal structure. There can be provided a composition for forming a coating type BPSG film which is excellent in adhesiveness in fine pattern, can be easily wet etched by a peeling solution which does not cause any damage to the semiconductor apparatus substrate, the coating type organic film or the CVD film mainly comprising carbon which are necessary in the patterning process, and can suppress generation of particles by forming it in the coating process.

  本发明提供了一种用于形成涂层型 BPSG 薄膜的组合物，该组合物包括：由以下通式 (1) 所代表的硅酸作为骨架结构的一种或多种结构、由以下通式 (2) 所代表的磷酸作为骨架结构的一种或多种结构以及由以下通式 (3) 所代表的硼酸作为骨架结构的一种或多种结构。本发明可提供一种用于形成涂层型 BPSG 薄膜的组合物，该组合物在精细图案方面具有优异的粘附性，可通过剥离溶液轻松进行湿蚀刻，不会对半导体设备基板、涂层型有机薄膜或图案化过程中所需的主要由碳构成的 CVD 薄膜造成任何损害，并且通过在涂层过程中形成该组合物，可抑制颗粒的生成。
• Pyrolysis of Esters. XXIII. 2,3-Divinyl-1,3-butadiene^1-3
  作者：William J. Bailey、Norman A. Nielsen

  DOI：10.1021/jo01056a025

  日期：1962.9
• Metal oxide-containing film-forming composition metal oxide-containing film-formed substrate, and patterning process
  申请人：Shin-Etsu Chemical Co., Ltd.

  公开号：EP2172808B1

  公开（公告）日：2014-06-04
• Metal oxide-containing film-forming composition, metal oxide-containing film-formed substrate, and patterning process
  申请人：Ogihara Tsutomu

  公开号：US20100086872A1

  公开（公告）日：2010-04-08

  There is disclosed a thermosetting metal oxide-containing film-forming composition for forming a metal oxide-containing film to be formed in a multilayer resist process used in lithography, the thermosetting metal oxide-containing film-forming composition comprising, at least: (A) a metal oxide-containing compound obtained by hydrolytic condensation of a hydrolyzable silicon compound and a hydrolyzable metal compound; (B) a thermal crosslinking accelerator; (C) a monovalent, divalent, or higher organic acid having 1 to 30 carbon atoms; (D) a trivalent or higher alcohol; and (E) an organic solvent. There can be provided a metal oxide-containing film-forming composition in a multi-layer resist process, in a manner that a film made of the composition allows for formation of an excellent pattern of a photoresist film, the composition is capable of forming a metal oxide-containing film as an etching mask having an excellent dry etching resistance, the composition is excellent in storage stability, and the film made of the composition is removable by a solution used in a removal process; a metal oxide-containing film-formed substrate; and a pattern forming process.