摩熵化学
数据库官网
小程序
打开微信扫一扫
首页 分子通 化学资讯 化学百科 反应查询 关于我们
请输入关键词

tris(4-chlorophenyl)sulfonium triflate | 127820-39-7

中文名称
——
中文别名
——
英文名称
tris(4-chlorophenyl)sulfonium triflate
英文别名
Trifluoromethanesulfonate;tris(4-chlorophenyl)sulfanium
tris(4-chlorophenyl)sulfonium triflate化学式
CAS
127820-39-7
化学式
CF3O3S*C18H12Cl3S
mdl
——
分子量
515.789
InChiKey
XDKRKTXKZQLTMH-UHFFFAOYSA-M
BEILSTEIN
——
EINECS
——
  • 物化性质
  • 计算性质
  • ADMET
  • 安全信息
  • SDS
  • 制备方法与用途
  • 上下游信息
  • 反应信息
  • 文献信息
  • 表征谱图
  • 同类化合物
  • 相关功能分类
  • 相关结构分类

物化性质

  • 熔点:
    110-112 °C

计算性质

  • 辛醇/水分配系数(LogP):
    6.79
  • 重原子数:
    30
  • 可旋转键数:
    3
  • 环数:
    3.0
  • sp3杂化的碳原子比例:
    0.05
  • 拓扑面积:
    66.6
  • 氢给体数:
    0
  • 氢受体数:
    6

反应信息

  • 作为反应物:
    描述:
    3-苯丙醇tris(4-chlorophenyl)sulfonium triflate 在 cesium hydroxide 作用下, 以 1,4-二氧六环 为溶剂, 反应 24.0h, 以76%的产率得到1-氯-4-(3-苯基丙氧基)苯
    参考文献:
    名称:
    三芳基ulf三氟甲磺酸盐对醇和苯酚的碱介导的O-芳基化作用。
    摘要:
    在不含过渡金属的条件下,开发了温和有效的三芳基ulf三氟甲磺酸酯进行醇和酚(ROH)芳基化的方案。各种醇,包括在芳基环上带有给电子或吸电子基团的伯,仲和叔醇以及苯酚,可以平稳转化为相应的芳族醚,产率中等至优异。反应在一定的碱存在下于50或80°C进行24小时,并显示出良好的官能团耐受性。不对称的三芳基ulf盐的碱介导的芳基化反应可以选择性地将sulf的芳基转移到ROH上,具体取决于它们固有的电子性质。
    DOI:
    10.1002/asia.201900968
  • 作为产物:
    描述:
    三氟甲磺酸酐4,4'-二氯二苯基亚砜氯苯二氯甲烷 为溶剂, 反应 2.0h, 以42%的产率得到tris(4-chlorophenyl)sulfonium triflate
    参考文献:
    名称:
    使用芳基ulf盐作为交叉偶联伙伴的Sonogashira反应
    摘要:
    三芳基ulf,烷基和氟烷基(二芳基)ulf和芳基(二烷基)ulf三氟甲磺酸盐已成功用作Sonogashira反应中的交叉偶联新家族,如芳基重氮盐,二芳基碘鎓盐和四苯基phosph盐。发现末端炔烃在室温下在Pd-和Cu-共催化下与三芳基(或三氟甲磺酸(2,2,2-三氟乙基)二苯基mild轻度反应,以高达> 99%的产率得到相应的芳基炔。该方案代表在Pd / Cu催化的Sonogashira反应中首次使用芳基ulf盐作为交叉偶联伴侣。
    DOI:
    10.1021/acs.orglett.7b02764
点击查看最新优质反应信息

文献信息

  • Arylation of <i>ortho</i>-Hydroxyarylenaminones by Sulfonium Salts and Arenesulfonyl Chlorides: An Access to Isoflavones
    作者:Satenik Mkrtchyan、Viktor O. Iaroshenko
    DOI:10.1021/acs.joc.0c02294
    日期:2021.4.2
    diversities of bench-stable and easy-to-use sulfonium salts and arenesulfonyl chlorides. Both developed methods, namely the light-mediated photoredox and electrophilic arylation, showed good efficiency, and are feasible for the preparation of 3-arylchromones in good-to-excellent yields. This work showcases the first described attempt where the sulfonium salts and arenesulfonyl chlorides were successfully utilized
    本文中,我们公开了三种新方法,这些方法可通过大量稳定和易于使用的sulf盐和芳烃磺酰氯将邻羟基羟基亚胺基芳基化后,直接有效地合成3-芳基色酮。两种开发的方法,即光介导的光氧化还原和亲电芳基化,均显示出良好的效率,并且对于以良好至优异的产率制备3-芳基色酮是可行的。这项工作展示了首次描述的尝试,其中成功地利用了salts盐和芳烃磺酰氯来构建色酮杂环系统。
  • Transition-Metal-Free N-Arylation of Amines by Triarylsulfonium Triflates
    作者:Ze-Yu Tian、Xiao-Xia Ming、Han-Bing Teng、Yu-Tian Hu、Cheng-Pan Zhang
    DOI:10.1002/chem.201802269
    日期:2018.9.18
    primary amines under the standard conditions, the bis(N‐phenyl) products were predominantly formed. This method was also applicable to the synthesis of bioactive N‐phenyl amino acid derivatives. The control experiments, the deuterium labelling study, and the presence of regioisomers of N‐arylated products when using 4‐substituted triarylsulfonium triflates suggested that the reaction might proceed through
    本文介绍了一种简单有效的三芳基ulf三氟甲磺酸酯对各种胺进行无过渡金属N-芳基化的方法。在t BuOK或KOH存在下,脂族和芳族胺均在80°C下平稳转化,从而以高至高收率获得了相应的单N芳基化产物。反应物的摩尔比和碱的选择对反应有很大的影响。当在标准条件下将大量过量的[Ph 3 S] [OTf]和t BuOK用于伯胺时,主要形成了双(N-苯基)产物。该方法也适用于生物活性氮的合成-苯基氨基酸衍生物。对照实验,氘标记研究以及使用4-取代的三芳基ulf三氟甲磺酸酯时N芳基化产物的区域异构体的存在表明,该反应可能会通过芳烃中间体进行。本方案证明,三芳基ulf盐在C Ar -N键的构建中是通用的芳基化试剂。
  • Acetal group containing norbornene copolymer for photoresist, method for producing the same and photoresist composition containing the same
    申请人:Samsung Electronics Co., Ltd.
    公开号:US20030004289A1
    公开(公告)日:2003-01-02
    An acetal group containing norbornene-based copolymer useful for a photoresist composition, a method for producing the same, and a photoresist composition containing the same are disclosed. According to the present invention, a copolymer of the present invention has excellent transparency at a wavelength of not more than about 250 nm, excellent resolution, excellent sensitivity, dry etching resistance and excellent adhesion to the substrate.
    本发明公开了一种含有缩醛基团的莽草烯基共聚物,用于光刻胶组合物,以及其制备方法和包含其的光刻胶组合物。根据本发明,本发明的共聚物在不超过约250nm的波长下具有优异的透明度、优异的分辨率、优异的灵敏度、干法蚀刻抵抗力和优异的基底附着力。
  • Polymer for photoresist, method of production thereof and photoresist composition containing polymer
    申请人:——
    公开号:US20020015906A1
    公开(公告)日:2002-02-07
    A polymer for a photoresist composition is given by the formula (I): 1 wherein R 1 is a hydrogen atom or a methyl group, R 2 is a C 1-12 linear or branched alkyl, haloalkyl or alkoxycarbonyl group, a C 5-12 cyclic alkyl, cyclic haloalkyl or cyclic alkoxycarbonyl group, a phenyl group or a naphthyl group, R 3 is a C 1-12 linear or branched alkyl or haloalkyl group, a C 5-12 cyclic alkyl or cyclic haloalkyl group, a phenyl group, or a naphthyl group, R 4 and R 5 are independently a hydrogen atom, a C 1-6 linear or branched alkyl, or a C 5-6 cyclic alkyl group, R′ and R″ are independently a hydrogen atom, a halogen atom, a C 1-8 alkyl or alkoxy group, a hydroxy group, a carbonate group or a phenyl group, and m, n, p and q are independently an integer provided that m and q are not zero, at least one of n and p are not zero, 0.4≦m/(m+n+p+q)≦0.9, 0≦n/(m+n+p+q)≦0.5, 0≦p/(m+n+p+q)≦0.5, and 0.01≦q/(m+n+p+q)≦0.3.
    给出了一种用于光阻组合物的聚合物,其化学式为(I):其中R1是氢原子或甲基基团,R2是C1-12线性或支链烷基,卤代烷基或烷氧羰基基团,C5-12环烷基,环卤代烷基或环烷氧羰基基团,苯基或萘基,R3是C1-12线性或支链烷基或卤代烷基,C5-12环烷基或环卤代烷基,苯基或萘基,R4和R5分别是氢原子,C1-6线性或支链烷基或C5-6环烷基基团,R'和R"分别是氢原子,卤素原子,C1-8烷基或烷氧基团,羟基,碳酸酯基或苯基,m,n,p和q是整数,其中m和q不为零,n和p中至少有一个不为零,0.4≤m/(m+n+p+q)≤0.9,0≤n/(m+n+p+q)≤0.5,0≤p/(m+n+p+q)≤0.5,0.01≤q/(m+n+p+q)≤0.3。
  • Novel photosensitive bilayer composition
    申请人:Foster Patrick
    公开号:US20050042542A1
    公开(公告)日:2005-02-24
    Polymers and co-polymers having monomeric units formed by the polymerization of monomers of the Structure I where R 1 is a moiety containing an ethylenically unsaturated polymerizable group, R 2 is a C 1 -C 3 alkylene group, and R 3 is a C 1-10 linear or cyclic alkyl group, a C 6-10 aromatic or substituted aromatic group, a C 1-8 alkoxy methyl, or a C 1-8 alkoxy ethyl group, are useful as binder resins for photosensitive compositions, and processes for photolithography in the production of semiconductor devices and materials.
    具有由结构I单体聚合形成的单体单元的高分子和共聚物,其中R1是含有乙烯基不饱和可聚合基团的基团,R2是C1-C3烷基基团,R3是C1-10线性或环烷基团,C6-10芳香或取代芳香基团,C1-8烷氧甲基或C1-8烷氧乙基基团,可用作感光组合物的粘合剂树脂,以及在半导体器件和材料的制造中用于光刻工艺的过程。
查看更多