BIRTWISTLE, DAVID H.;BROWN, JOHN M.;FOXTON, MICHAEL W., TETRAHEDRON, 44,(1988) N3, C. 7309-7318
作者:BIRTWISTLE, DAVID H.、BROWN, JOHN M.、FOXTON, MICHAEL W.
DOI:——
日期:——
VORSKANYAN, S. A.;CHOBANYAN, ZH. A.;BADANYAN, SH. O., ARM. XIM. ZH., 41,(1988) N1, S. 708-711
作者:VORSKANYAN, S. A.、CHOBANYAN, ZH. A.、BADANYAN, SH. O.
DOI:——
日期:——
TOSHIYUKI, I.;KAWAMURA, N.;SEIJIRO, M.;KIITIRO, U.;KOZIMA, S.;TORAZO, H., J. ORG. CHEM., 52,(1987) N 19, 4416-4418
作者:TOSHIYUKI, I.、KAWAMURA, N.、SEIJIRO, M.、KIITIRO, U.、KOZIMA, S.、TORAZO, H.
DOI:——
日期:——
THIN FILM TRANSISTORS WITH POLY(ARYLENE ETHER) POLYMERS AS GATE DIELECTRICS AND PASSIVATION LAYERS
申请人:Kretz Peck Christine
公开号:US20070296047A1
公开(公告)日:2007-12-27
The use of a poly(arylene ether) polymer as a passivation or gate dielectric layer in thin film transistors. This poly(arylene ether) polymer includes polymer repeat units of the following structure:
—(O—Ar
1
—O—Ar
2
—O—)
m
—(—O—Ar
3
—O—Ar
4
—O)
n
—
where Ar
1
, Ar
2
, Ar
3
, and Ar
4
are identical or different aryl radicals, m is 0 to 1, n is 1−m, and at least one of the aryl radicals is grafted to the backbone of the polymer