Mg(tmhd)2(TMEDA) | 302351-10-6

• 分子结构分类: 有机化合物 - 有机氧化合物
• 英文名称: Mg(tmhd)2(TMEDA)
• 英文别名: bis(2,2,6,6-tetramethyl-3,5-heptanedionato)(N,N,N',N'-tetramethylethylenediamine)magnesium(II)
• CAS: 302351-10-6
• 化学式: C₂₈H₅₄MgN₂O₄
• 分子量: 507.053
• InChiKey: SFFIRYUZZHMVNF-UHFFFAOYSA-N

计算性质

• 辛醇/水分配系数(LogP)：
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• 重原子数：
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• 可旋转键数：
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• 环数：
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• sp3杂化的碳原子比例：
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• 拓扑面积：
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• 氢给体数：
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• 氢受体数：
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反应信息

• 作为反应物：
  描述：

  tin(II) acetylacetonate 、 tris(2,2,6,6-tetramethyl-3,5-heptanedionato)indium(III) 、 Mg(tmhd)2(TMEDA) 、 氧气 以 gas 为溶剂， 生成
  参考文献：
  名称：

  Charge Transport and Optical Properties of MOCVD-Derived Highly Transparent and Conductive Mg- and Sn-Doped In₂O₃ Thin Films

  摘要：

  Mg- and Sn-doped In2O3 (MgInxSnyOz, 6.0 < x < 16.0; 3.0 < y < 8.0) thin films were grown by low-pressure metal-organic chemical vapor deposition using the volatile metal-organic precursors tris (2,2,6,6-tetramethyl-3,5-heptanedionato)indium(III) [In(dpm)(3)], bis(2,4-pentanedionato)tin(II) [Sn(acac)(2)], and bis(2,2,6,6-tetramethyl-3,5-heptanedionato) (N,N,N',N'-tetramethylethylenediamine)magnesium(II) [Mg(dpm)(2)(TMEDA)]. Films in this compositional range retain the cubic In2O3 bixbyite crystal structure. The highest conductivity is found to be similar to 1000 S/cm for an as-grown film with a nominal composition MgIn14.3Sn6.93Oz. Annealing of such films in a vacuum raises the conductivity to similar to 2000 S/cm. The optical transmission window of the present films is significantly wider than that of typical indium tin oxide (ITO) films from 300 to 3300 nm, and the transmittance is also greater than or comparable to that of commercial ITO films.

  DOI：

  10.1021/ic0501364
• 作为产物：
  描述：

  2,2,6,6-四甲基-3,5-庚二酮 、 四甲基乙二胺 在 magnesium(II) nitrate hexahydrate 、 sodium hydroxide 作用下， 以 乙醇 、 水 为溶剂， 生成 Mg(tmhd)2(TMEDA)
  参考文献：
  名称：

  Stability Study of a Magnesium β-Diketonate As Precursor for Chemical Vapor Deposition of MgO

  摘要：

  On the basis of the study of the thermal behavior of [Mg(tmhd)(2)(TMEDA)] (1; tmhd = 2,2,6,6-tetramethyl-3,5-heptanedionate; TMEDA = N,N,N',N'-tetramethylethylenediamine), a novel procedure for magnesium oxide thin film growth has been developed for chemical vapor deposition (CVD) applications. Complementary studies (thermogravimetric measurements and IR and NMR spectroscopy) enabled revelation of the dissociation of TMEDA from 1, confirmed by the detection of both free TMEDA in the vapor phase and less volatile [Mg-2(tmhd)(4)] (2) as a residue after sublimation. The effect of this dissociation is an unwanted changeable sublimation rate of the precursor 1 during the CVD process. The endeavor of a constant deposition rate by simultaneously exploiting the good volatility of 1 was achieved through its synthesis in situ by using 2 with a diamine enriched carrier. Laser reflectance interferometry (LRI) measurements testified that such a method ensured a good and constant deposition rate throughout the growth experiment, independently of the adopted processing conditions. In addition, X-ray diffraction (XRD) measurements revealed the obtainment of textured and polycrystalline MgO coatings on sapphire and on Si(100). The system chemical composition was investigated by X-ray photoelectron spectroscopy (XPS).

  DOI：

  10.1021/cm1020788