Mechanochemical Synthesis, Photophysical Properties, and X-ray Structures of N-Heteroacenes
作者:Prasit Kumar Sahoo、Chandan Giri、Tuhin Subhra Haldar、Rakesh Puttreddy、Kari Rissanen、Prasenjit Mal
DOI:10.1002/ejoc.201600005
日期:2016.3
chromatographic purifications could be avoided after the solvent-free syntheses. The UV/Vis absorption spectra of the pyrazaacenes show intense absorption bands in the near-IR region. The single-crystal X-ray analyses of selected pyrazaacene derivatives showed pairwise π–π interactions and some C–H···π interactions, which could account for some of the photophysical features of the compounds in the solid
所描述的机械化学方法是概念验证的一个例子,在该方法中,在无溶剂球磨条件下实现了基于溶液的乏味、收率低且困难的吡氮杂并苯合成;该方法简单、高产、省时、环保。合成的化合物还包括吡氮杂并苯(N-杂并苯),它们是含有芘结构单元的辛苯类似物。该化合物微溶于普通溶剂,无溶剂合成后可避免柱层析纯化。吡氮杂并苯的紫外/可见吸收光谱在近红外区域显示出强烈的吸收带。选定的吡氮杂并苯衍生物的单晶 X 射线分析显示成对的 π-π 相互作用和一些 C-H…π 相互作用,
Vollmann et al., Justus Liebigs Annalen der Chemie, 1937, vol. 531, p. 1,151
作者:Vollmann et al.
DOI:——
日期:——
ORGANIC THIN FILM TRANSISTOR
申请人:LG Chem, Ltd.
公开号:EP1836731B1
公开(公告)日:2017-10-11
PYRENE DERIVATIVES AND ORGANIC ELECTRONIC DEVICE USING PYRENE DERIVATIVES
申请人:LG CHEM, LTD.
公开号:EP1828343B1
公开(公告)日:2016-12-07
Organic thin film transistor
申请人:Hwang Ho In
公开号:US20070023749A1
公开(公告)日:2007-02-01
The present invention relates to an organic thin film transistor which includes an organic layer comprising an organic compound facilitating the ohmic contact between a semi-conducting layer and electrodes and serving as the semi-conducting layer. The organic thin film transistor according to the present invention has excellent electric contact between the semiconductor layer and the source electrode/drain electrode, and thus can be widely used as components for electric/electronic devices. As a result, as the materials for the source electrode or the drain electrode in the organic thin film transistor, materials which are less expensive and excellent in processibility though they have a low work function as the materials can be used.