4-((benzo[d]oxazol-2-yl(cyclopropyl)amino)methyl)-7,8-difluoroquinolin-2(1H)-one | 1125863-77-5

• 分子结构分类: 有机化合物 - 有机杂环化合物 - 喹啉及其衍生物
• 英文名称: 4-((benzo[d]oxazol-2-yl(cyclopropyl)amino)methyl)-7,8-difluoroquinolin-2(1H)-one
• 英文别名: 4-[[1,3-benzoxazol-2-yl(cyclopropyl)amino]methyl]-7,8-difluoro-1H-quinolin-2-one
• CAS: 1125863-77-5
• 化学式: C₂₀H₁₅F₂N₃O₂
• 分子量: 367.355
• InChiKey: VPDGAPHTSOYSJD-UHFFFAOYSA-N

计算性质

• 辛醇/水分配系数(LogP)：
  3.4
• 重原子数：
  27
• 可旋转键数：
  4
• 环数：
  5.0
• sp3杂化的碳原子比例：
  0.2
• 拓扑面积：
  58.4
• 氢给体数：
  1
• 氢受体数：
  6

文献信息

• [EN] DIARYLAMINE-SUBSTITUTED QUINOLONES USEFUL AS INDUCIBLE NITRIC OXIDE SYNTHASE INHIBITORS<br/>[FR] QUINOLONES SUBSTITUÉES PAR DIARYLAMINE UTILES COMME INHIBITEURS DE L'OXYDE NITRIQUE SYNTHASE INDUCTIBLE.
  申请人：KALYPSYS INC

  公开号：WO2009029617A1

  公开（公告）日：2009-03-05

  Novel diarylamine-substituted quinolone compounds and pharmaceutical compositions, certain of which have been found to inhibit inducible NOS synthase have been discovered, together with methods of synthesizing and using the compounds including methods for the treatment of iNOS-mediated diseases in a patient by administering the compounds.

  已发现新的含有二芳胺基取代喹诺酮化合物和药物组合物，其中一些已被发现能抑制诱导型NOS合成酶，还包括合成和使用这些化合物的方法，包括通过给患者施用这些化合物治疗iNOS介导的疾病的方法。
• LAMINATE AND METHOD FOR FORMATION THEREOF, INSULATING FILM, SEMICONDUCTOR DEVICE, AND COMPOSITION FOR FORMING FILM
  申请人：JSR Corporation

  公开号：EP1679184A1

  公开（公告）日：2006-07-12

  A laminate having a low relative dielectric constant and exhibiting excellent adhesion, a method of forming the laminate, an insulating film, a semiconductor device, and a film-forming composition are provided. A laminate according to the invention includes: a first silica-based film; a second silica-based film; and an organic film, wherein the second silica-based film includes a monovalent organic group containing a carbon-carbon double bond or a carbon-carbon triple bond. A method of forming a laminate according to the invention includes: forming a first coating for a first silica-based film on a substrate; forming a second coating for a second silica-based film on the first coating, the second coating including a monovalent organic group containing a carbon-carbon double bond or a carbon-carbon triple bond; forming a third coating for an organic film on the second coating; and curing a multilayer film including the first to third coatings.

  本发明提供了一种具有低相对介电常数并表现出优异附着力的层压板、一种形成该层压板的方法、一种绝缘膜、一种半导体器件和一种成膜组合物。 根据本发明的层压板包括：第一硅基薄膜；第二硅基薄膜；以及有机薄膜，其中第二硅基薄膜包括含有碳碳双键或碳碳三键的一价有机基团。 根据本发明形成层压板的方法包括：在基底上形成第一硅基薄膜的第一涂层；在第一涂层上形成第二硅基薄膜的第二涂层，第二涂层包括含有碳碳双键或碳碳三键的一价有机基团；在第二涂层上形成有机薄膜的第三涂层；以及固化包括第一至第三涂层的多层薄膜。
• INSULATING FILM, METHOD FOR FORMING SAME AND COMPOSITION FOR FORMING FILM
  申请人：JSR Corporation

  公开号：EP1696478A1

  公开（公告）日：2006-08-30

  The invention provides a method of forming an insulating film which exhibits resistance against processing such as RIE used when forming a dual-damascene structure while maintaining a low relative dielectric constant of a polysiloxane insulating film. A polysiloxane insulating film is formed on a substrate by hydrolysis and condensation of a silane compound. A solution obtained by dissolving a polycarbosilane compound shown by the following general formula in a solvent is applied to the polysiloxane insulating film, and the resulting coating is heated to form a polycarbosilane insulating film. An organic insulating film is then formed on the polycarbosilane insulating film.

  本发明提供了一种形成绝缘膜的方法，这种绝缘膜既能抵抗在形成双大马士革结构时使用的 RIE 等加工，又能保持聚硅氧烷绝缘膜较低的相对介电常数。聚硅氧烷绝缘膜是通过硅烷化合物的水解和缩合作用在基材上形成的。将下表通式所示的聚碳硅烷化合物溶解在溶剂中得到的溶液涂抹在聚硅氧烷绝缘膜上，然后加热涂层，形成聚碳硅烷绝缘膜。 然后在聚碳硅烷绝缘膜上形成有机绝缘膜。
• Insulating film and method of forming the same
  申请人：Shiota Atsushi

  公开号：US20060210812A1

  公开（公告）日：2006-09-21

  A method of forming an insulating film includes: forming a polysiloxane insulating film on a substrate; forming a polycarbosilane insulating film on the polysiloxane insulating film; and forming an organic insulating film on the polycarbosilane insulating film. The polysiloxane insulating film is formed by hydrolysis and condensation of a silane compound, and the polycarbosilane insulating film is formed by applying a solution, obtained by dissolving a polycarbosilane compound in a solvent, to the polysiloxane insulating film, and heating the resulting coating,

  一种形成绝缘膜的方法包括：在基材上形成聚硅氧烷绝缘膜；在聚硅氧烷绝缘膜上形成聚碳硅烷绝缘膜；以及在聚碳硅烷绝缘膜上形成有机绝缘膜。聚硅氧烷绝缘膜是通过硅烷化合物的水解和缩合形成的，而聚碳硅烷绝缘膜则是通过将聚碳硅烷化合物溶解在溶剂中得到的溶液涂覆在聚硅氧烷绝缘膜上，并加热所形成的涂层而形成的、
• Laminate and method of forming the same, insulating film, and semiconductor device
  申请人：Akiyama Masahiro

  公开号：US20060216531A1

  公开（公告）日：2006-09-28

  A laminate including: a first silica-based film; a second silica-based film; and an organic film, wherein the second silica-based film includes an organic group containing a carbon-carbon double bond or a carbon-carbon triple bond. A method of forming the laminate includes: forming a first coating for a first silica-based film on a substrate; forming a second coating for a second silica-based film on the first coating, the second coating including an organic group containing a carbon-carbon double bond or a carbon-carbon triple bond; forming a third coating for an organic film on the second coating; and curing a multilayer film including the first to third coatings.