5-trifluoromethyl-5-hydroxybicyclo[2.2.1]-2-heptene | 131252-29-4

• 分子结构分类: 有机化合物 - 有机氧化合物
• 英文名称: 5-trifluoromethyl-5-hydroxybicyclo[2.2.1]-2-heptene
• 英文别名: 5-(Trifluoromethyl)bicyclo[2.2.1]hepta-2-ene-5-ol；2-(trifluoromethyl)bicyclo[2.2.1]hept-5-en-2-ol
• CAS: 131252-29-4
• 化学式: C₈H₉F₃O
• 分子量: 178.154
• InChiKey: GQJOYSGQPRLCMY-UHFFFAOYSA-N

计算性质

• 辛醇/水分配系数(LogP)：
  1.8
• 重原子数：
  12
• 可旋转键数：
  0
• 环数：
  2.0
• sp3杂化的碳原子比例：
  0.75
• 拓扑面积：
  20.2
• 氢给体数：
  1
• 氢受体数：
  4

反应信息

• 作为产物：
  描述：

  三氟甲烷 、 双环[2.2.1]庚-5-烯-2-酮 在 tetrabutylammonium (2-pyrrolidonide) 、 六甲基二硅氮烷 作用下， 生成 5-trifluoromethyl-5-hydroxybicyclo[2.2.1]-2-heptene
  参考文献：
  名称：

  Electroorganic chemistry. 130. A novel trifluoromethylation of aldehydes and ketones promoted by an electrogenerated base

  摘要：

  A base generated by the electroreduction of 2-pyrrolidone deprotonated trifluoromethane to form a trifluoromethyl anion equivalent. In the presence of hexamethyldisilazane, this species reacted with a variety of aldehydes and ketones to afford (trifluoromethyl)-carbinols in high yield.

  DOI：

  10.1021/jo00001a002

文献信息

• BASIC COMPOUND, CHEMICALLY AMPLIFIED RESIST COMPOSITION, AND PATTERNING PROCESS
  申请人：Hatakeyama Jun

  公开号：US20120141938A1

  公开（公告）日：2012-06-07

  A chemically amplified resist composition comprising a base polymer, an acid generator, and an amine quencher in the form of a β-alanine, γ-aminobutyric acid or 5-aminovaleric acid derivative having an acid labile group-substituted carboxyl group has a high contrast of alkaline dissolution rate before and after exposure and forms a pattern of good profile at a high resolution, minimal roughness and wide focus margin.

  一种化学放大型光刻胶组合物，包括基础聚合物、酸发生剂和胺淬灭剂，后者为β-丙氨酸、γ-氨基丁酸或5-氨基戊酸的衍生物，具有一个被酸不稳定基团所取代的羧基，这种组合物在曝光前后具有高对比度的碱性溶解速率，并且能够形成高分辨率、最小粗糙度和宽焦深度的良好图案轮廓。
• MONOMER, POLYMER, RESIST COMPOSITION, AND PATTERNING PROCESS
  申请人：SHIN-ETSU CHEMICAL CO., LTD.

  公开号：US20140045123A1

  公开（公告）日：2014-02-13

  A polymer comprising recurring units derived from a (meth)acrylate monomer of tertiary ester type having branched alkyl on alicycle is used to form a resist composition. When subjected to exposure, PEB and organic solvent development, the resist composition is improved in dissolution contrast.

  一种聚合物，包括由具有支链烷基的萜酸酯单体衍生的重复单元，用于形成抗蚀组合物。在经过曝光、PEB和有机溶剂显影处理后，抗蚀组合物在溶解对比度方面得到改善。
• RESIST COMPOSITION, PATTERNING PROCESS, AND BARIUM, CESIUM AND CERIUM SALTS
  申请人：SHIN-ETSU CHEMICAL CO., LTD.

  公开号：US20170115566A1

  公开（公告）日：2017-04-27

  A resist composition comprising a base resin comprising acid labile group-containing recurring units and preferably acid generator-containing recurring units, and a sodium, magnesium, potassium, calcium, rubidium, strontium, yttrium, cesium, barium or cerium salt of α-fluorinated sulfonic acid bonded to an alkyl, alkenyl, alkynyl or aryl group exhibits a high resolution and sensitivity and forms a pattern of satisfactory profile with minimal LWR after exposure and development.

  一种抗蚀组合物包括基树脂，其中包含含酸敏感基团的重复单元，最好包含含酸发生剂的重复单元，以及与烷基、烯基、炔基或芳基结合的α-氟磺酸的钠、镁、钾、钙、铷、锶、钇、铯、钡或铈盐，表现出高分辨率和灵敏度，并在曝光和显影后形成具有最小LWR的满意轮廓图案。
• Monomer having electron-withdrawing group and process for preparing the same
  申请人：——

  公开号：US20030059710A1

  公开（公告）日：2003-03-27

  A monomer containing an electron-withdrawing group of the present invention is represented by following Formula (a), (b) or (c): 1 wherein A 1 , A 2 , and A 3 are each a ring; R a , R b , R c , and R u are the same or different and are each a hydrogen atom or organic group; at least one of R s , R w and R v , at least one of R t and R w1 , and at least one of the two R w2 s are each an electron-withdrawing group, and the others are each a hydrogen atom or organic group; W 1 is a single bond or linkage group; and n denotes an integer of 2 to 25, where at least two of R a , R b , R c , R s , R t , R u , R v , R w , R w1 , R w2 , W 1 , and carbon atoms constituting ring A 1 , carbon atoms constituting ring A 2 , and carbon atoms constituting ring A 3 may be combined to form a ring, respectively. The electron-withdrawing groups in R s , R t , R v , R w , R w1 , and R w2 are, for example, groups each containing a fluorine atom. The monomer is useful as a raw material for photoresist polymeric compounds.

  本发明的含有电子吸引基团的单体由以下化学式(a)、(b)或(c)表示：其中A1、A2和A3各自为一个环；Ra、Rb、Rc和Ru相同或不同，各自为氢原子或有机基团；Rs、Rw和Rv中至少有一个，Rt和Rw1中至少有一个，两个Rw2中至少有一个为电子吸引基团，其他的为氢原子或有机基团；W1为单键或连接基团；n表示2到25的整数，其中至少有两个Ra、Rb、Rc、Rs、Rt、Ru、Rv、Rw、Rw1、Rw2、W1和构成环A1的碳原子、构成环A2的碳原子以及构成环A3的碳原子可以分别结合形成一个环。 Rs、Rt、Rv、Rw、Rw1和Rw2中的电子吸引基团，例如，是每个含有氟原子的基团。该单体可用作光刻胶聚合物化合物的原材料。
• MONOMER, POLYMER, CHEMICALLY AMPLIFIED POSITIVE RESIST COMPOSITION, AND PATTERNING PROCESS
  申请人：Hatakeyama Jun

  公开号：US20110294070A1

  公开（公告）日：2011-12-01

  A polymer is obtained from a hydroxyphenyl methacrylate monomer having an acid labile group substituted thereon. A positive resist composition comprising the polymer as a base resin has a very high contrast of alkaline dissolution rate before and after exposure, a high resolution, a good profile and minimal line edge roughness of a pattern after exposure, a retarded acid diffusion rate, and good etching resistance.

  一种聚合物是由一种具有酸敏感基团的羟基苯甲酸甲酯单体合成得到的。该聚合物作为基础树脂的正性光阻组合物具有极高的曝光前后碱溶解速率对比度、高分辨率、曝光后图案的良好轮廓和极小的线边粗糙度、缓慢的酸扩散速率和良好的蚀刻抗性。